基于鳍形电容器配置的 100 mV 超低偏置 AlGaN/GaN 光电探测器，用于未来集成光电,ACS Photonics

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基于鳍形电容器配置的 100 mV 超低偏置 AlGaN/GaN 光电探测器，用于未来集成光电
ACS Photonics ( IF 6.5 ) Pub Date : 2023-04-12 , DOI: 10.1021/acsphotonics.2c01878
Yuhan Pu _{1,

2} , Yung C. Liang _{1,

2}

Affiliation

本研究介绍了一种 AlGaN/GaN 紫外 (UV) 光电探测器，经证明在超低偏置电压下工作时非常有效。所提出的光电探测器基于创新配置，由重复的 AlGaN/GaN 鳍状电容器单元组成，利用二维电子气 (2DEG) 层作为正场板，侧壁钨肖特基金属作为接地板围绕大部分光载流子生成空间。此外，制造了独特的部分侧壁氧化物结构，以将 2DEG 场板与接地板隔开，并实现适当的耗尽场形成。特殊的结构设计，在每个鳍状电容器单元内形成对称的三维耗尽场，以在超低偏置电压下在空间上夹断整个体区。然后可以通过这种广泛的领域覆盖来实现有效的光载流子收集。当偏置电压为 100 mV 时，制造的原型展示了响应 365 nm UV 的有趣性能，例如 7.0 × 10 的光电流与暗电流之比^{如图 4 所示}，峰值响应率为 1.1 × 10 ³ A/W，探测灵敏度为 1.1 × 10 ¹⁶琼斯。在强度为 0.7 mW/cm ²且工作频率高达 1 kHz 的 365 nm 紫外线脉冲下也观察到了良好的瞬态性能。这项工作体现了 AlGaN/GaN 外延异质结平台上的超低电压 UV 光电探测器，具有简洁且互补的金属氧化物半导体 (CMOS) 兼容制造工艺，为超低功率光电集成电路开辟了诱人的潜力未来的物联网和边缘计算应用。

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100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

This study presents an AlGaN/GaN ultraviolet (UV) photodetector proven to be highly effective when working under an ultra-low bias voltage. The proposed photodetector is based on an innovative configuration consisting of repetitive AlGaN/GaN fin-shaped capacitor units, which make use of the two-dimensional electron gas (2DEG) layer as the positive field plates and the sidewall tungsten Schottky metal as the ground plates to surround the bulk of photocarrier generation space. Furthermore, a unique partial sidewall oxide structure is fabricated to partition the 2DEG field plates from the ground plates and to enable proper depletion field formation. With the special structure design, the symmetrical three-dimensional depletion fields are formed within each fin-shaped capacitor unit to spatially pinch off the entire bulk region at an ultra-low bias voltage. Effective photocarrier collection can then be achieved by such an extensive field coverage. When biased at 100 mV, intriguing performances in response to 365 nm UV were demonstrated by the fabricated prototype, such as a photocurrent-to-dark-current-ratio of 7.0 × 10⁴, a peak responsivity of 1.1 × 10³ A/W, as well as a large detectivity of 1.1 × 10¹⁶ Jones. Good transient performance was also observed under 365 nm UV pulses of 0.7 mW/cm² in intensity with an operating frequency of up to 1 kHz. This work embodies an ultra-low voltage UV photodetector on the AlGaN/GaN epitaxy heterojunction platform with concise and complementary metal-oxide-semiconductor (CMOS)-compatible fabrication procedures, opening up an appealing potential in ultra-low-power optoelectronic integrated circuits for future Internet of Things and edge computing applications.

更新日期：2023-04-12

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