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Mg Substitution Induced TM/Vacancy Disordering and Enhanced Structural Stability in Layered Oxide Cathode Materials
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-02-21 , DOI: 10.1021/acsami.2c21608 Luyao Wang, Chu Zhang, Lu Yang, Shuwei Li, Hang Chu, Xiangfei Li, Ying Meng, Haoyu Zhuang, Yurui Gao, Zhiwei Hu, Jin-Ming Chen, Shu-Chih Haw, Cheng-wei Kao, Ting-Shan Chan, Xi Shen, Zhaoxiang Wang, Richeng Yu
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-02-21 , DOI: 10.1021/acsami.2c21608 Luyao Wang, Chu Zhang, Lu Yang, Shuwei Li, Hang Chu, Xiangfei Li, Ying Meng, Haoyu Zhuang, Yurui Gao, Zhiwei Hu, Jin-Ming Chen, Shu-Chih Haw, Cheng-wei Kao, Ting-Shan Chan, Xi Shen, Zhaoxiang Wang, Richeng Yu
Anionic redox is an effective way to increase the capacity of the cathode materials. Na2Mn3O7 [Na4/7[Mn6/7□1/7]O2, □ for the transition metal (TM) vacancies] with native and ordered TM vacancies can conduct a reversible oxygen redox and be a promising high-energy cathode material for sodium-ion batteries (SIBs). However, its phase transition at low potentials (∼1.5 V vs Na+/Na) induces potential decays. Herein, magnesium (Mg) is doped on the TM vacancies to form a disordered Mn/Mg/□ arrangement in the TM layer. The Mg substitution suppresses the oxygen oxidation at ∼4.2 V by reducing the number of the Na–O–□ configurations. Meanwhile, this flexible disordering structure inhibits the generation of the dissolvable Mn2+ ions and mitigates the phase transition at ∼1.6 V. Therefore, the Mg doping improves the structural stability and its cycling performance in 1.5–4.5 V. The disordering arrangement endows Na0.49Mn0.86Mg0.06□0.08O2 with a higher Na+ diffusivity and improved rate performance. Our study reveals that oxygen oxidation is highly dependent on the ordering/disordering arrangements in the cathode materials. This work provides insights into the balance of anionic and cationic redox for enhancing the structural stability and electrochemical performance in the SIBs.
中文翻译:
层状氧化物正极材料中的 Mg 取代诱导 TM/空位无序化和增强的结构稳定性
阴离子氧化还原是提高正极材料容量的有效途径。Na 2 Mn 3 O 7 [Na 4/7 [Mn 6/7 □ 1/7 ]O 2 , □ for the transition metal (TM) vacancies] 具有天然和有序的TM空位可以进行可逆的氧氧化还原并且是有前途的用于钠离子电池 (SIB) 的高能正极材料。然而,它在低电位下的相变(~1.5 V vs Na +/Na) 引起电位衰减。此处,镁(Mg)掺杂在TM空位上,在TM层中形成无序排列的Mn/Mg/□。Mg 取代通过减少 Na-O-□ 构型的数量来抑制 ~4.2 V 的氧氧化。同时,这种灵活的无序结构抑制了可溶性 Mn 2+离子的产生并减缓了~1.6 V 的相变。因此,Mg 掺杂提高了结构稳定性及其在 1.5-4.5 V 的循环性能。无序排列赋予 Na 0.49 Mn 0.86 Mg 0.06 □ 0.08 O 2具有较高的Na +扩散率和改进的倍率性能。我们的研究表明,氧氧化高度依赖于阴极材料中的有序/无序排列。这项工作提供了对阴离子和阳离子氧化还原平衡的见解,以增强 SIB 的结构稳定性和电化学性能。
更新日期:2023-02-21
中文翻译:
层状氧化物正极材料中的 Mg 取代诱导 TM/空位无序化和增强的结构稳定性
阴离子氧化还原是提高正极材料容量的有效途径。Na 2 Mn 3 O 7 [Na 4/7 [Mn 6/7 □ 1/7 ]O 2 , □ for the transition metal (TM) vacancies] 具有天然和有序的TM空位可以进行可逆的氧氧化还原并且是有前途的用于钠离子电池 (SIB) 的高能正极材料。然而,它在低电位下的相变(~1.5 V vs Na +/Na) 引起电位衰减。此处,镁(Mg)掺杂在TM空位上,在TM层中形成无序排列的Mn/Mg/□。Mg 取代通过减少 Na-O-□ 构型的数量来抑制 ~4.2 V 的氧氧化。同时,这种灵活的无序结构抑制了可溶性 Mn 2+离子的产生并减缓了~1.6 V 的相变。因此,Mg 掺杂提高了结构稳定性及其在 1.5-4.5 V 的循环性能。无序排列赋予 Na 0.49 Mn 0.86 Mg 0.06 □ 0.08 O 2具有较高的Na +扩散率和改进的倍率性能。我们的研究表明,氧氧化高度依赖于阴极材料中的有序/无序排列。这项工作提供了对阴离子和阳离子氧化还原平衡的见解,以增强 SIB 的结构稳定性和电化学性能。