In this work, we study the thermal behavior of end-of-range (EOR) defects formed in Ge⁺ (35 KeV, 1 × 10¹⁵ cm⁻²) pre-amorphized silicon at room temperature. Using low-temperature photoluminescence (PL) and transmission electron microscopy (TEM) in weak-beam dark-field (WBDF) mode, we show that, EOR defects, formed just beneath the former crystal to amorphous (c/a) interface, manifest several configurations depending on the thermal budget. For samples annealed at low thermal budget, PL measurements show that EOR defects consist only of various nano-self-interstitial clusters. However, during a middle annealing budget, there is appearance of {113} defects in addition to clusters. At a critical high thermal budget, the plan-view WBDF micrographs reveal that {113} defects are transformed into dislocation loops (DL). After that, as the annealing progresses, the different types of EOR defects grow in size, where their density decreases and their structure changes. This thermal behavior of EOR defects can be explained by the Ostwald ripening mechanism.

在这项工作中，我们研究了室温下在 Ge ⁺ (35 KeV, 1 × 10 ¹⁵  cm ^-2 ) 预非晶化硅中形成的范围末端 (EOR) 缺陷的热行为。在弱光束暗场 (WBDF) 模式下使用低温光致发光 (PL) 和透射电子显微镜 (TEM)，我们表明，EOR 缺陷形成于前者晶体下方的非晶态 ( c / a) 接口，根据热预算显示几种配置。对于在低热预算下退火的样品，PL 测量表明 EOR 缺陷仅由各种纳米自间隙簇组成。然而，在中间退火预算期间，除了簇之外还出现{113}缺陷。在临界高热预算下，平面图 WBDF 显微照片显示 {113} 缺陷转化为位错环 (DL)。之后，随着退火的进行，不同类型的 EOR 缺陷的尺寸会增大，它们的密度会降低，结构也会发生变化。EOR 缺陷的这种热行为可以用 Ostwald 熟化机制来解释。