Two-dimensional multiferroic materials have garnered broad interests attributed to their magnetoelectric properties and multifunctional applications. Multiferroic heterostructures have been realized, nevertheless, the direct coupling between ferroelectric and ferromagnetic order in a single material still remains challenging, especially for two-dimensional materials. Here, we develop a physical vapor deposition approach to synthesize two-dimensional p-doped SnSe. The local phase segregation of SnSe₂ microdomains and accompanying interfacial charge transfer results in the emergence of degenerate semiconductor and metallic feature in SnSe. Intriguingly, the room-temperature ferrimagnetism has been demonstrated in two-dimensional p-doped SnSe with the Curie temperature approaching to ~337 K. Meanwhile, the ferroelectricity is maintained even under the depolarizing field introduced by SnSe₂. The coexistence of ferrimagnetism and ferroelectricity in two-dimensional p-doped SnSe verifies its multiferroic feature. This work presents a significant advance for exploring the magnetoelectric coupling in two-dimensional limit and constructing high-performance logic devices to extend Moore’s law.

二维多铁性材料因其磁电特性和多功能应用而受到广泛关注。已经实现了多铁异质结构，然而，单一材料中铁电和铁磁顺序之间的直接耦合仍然具有挑战性，特别是对于二维材料。在这里，我们开发了一种物理气相沉积方法来合成二维 p 掺杂 SnSe。_{SnSe 2}的局部相偏析微区和伴随的界面电荷转移导致 SnSe 中出现简并半导体和金属特征。有趣的是，室温亚铁磁性已在二维 p 掺杂 SnSe 中得到证明，居里温度接近~337 K。同时，即使在 SnSe ₂引入的去极化场下，铁电性也得以保持。二维p掺杂SnSe中亚铁磁性和铁电性的共存验证了其多铁性特征。这项工作为探索二维极限下的磁电耦合和构建高性能逻辑器件以扩展摩尔定律提供了重大进展。