Surface Passivation of MAPbBr3 Perovskite Single Crystals to Suppress Ion Migration and Enhance Photoelectronic Performance,ACS Applied Materials & Interfaces

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Surface Passivation of MAPbBr3 Perovskite Single Crystals to Suppress Ion Migration and Enhance Photoelectronic Performance
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2022-01-28 , DOI: 10.1021/acsami.1c21948
Luoran Chen _{1,

2,

3} , Hu Wang _{1,

3} , Wenqing Zhang _{1,

2,

3} , Fenghua Li _{1,

3} , Zhiyuan Wang _{1,

2,

3} , Xueyan Wang _{1,

3} , Yuchuan Shao _{1,

2,

3,

4} , Jianda Shao _{1,

2,

3,

4}

Affiliation

Recently, organometal halide perovskites (OHPs) have achieved significant advancement in photovoltaics, light-emitting diodes, X-ray detectors, and transistors. However, commercialization and practical applications were hindered by the notorious ion migration issue of OHPs. Here, we report a simple solvent-based surface passivation strategy with organic halide salts (methylammonium bromide (MABr) and phenylethylammonium bromide (PEABr)) to suppress the ion migration of MAPbBr₃ single crystals. The surface passivation effect is evidenced by the stronger photoluminescence (PL) intensity and extended PL lifetime. Using the pulse voltage and continuous voltage current–voltage measurements, we found that single crystals with surface passivation showed negligible hysteresis on the surface due to the suppression of ion migration. As a result, the dark current stability of coplanar structure devices was significantly improved. Moreover, the vertical structure X-ray detectors with PEABr treatment exhibited a high sensitivity of 15 280 μC Gy_air^–1 cm^–2 and a low detection limit of 87 nGy_air s^–1 under 5 V bias. The proposed technology would be a versatile tool to improve the performance of perovskite photoelectronic devices.

中文翻译：

MAPbBr3 钙钛矿单晶的表面钝化以抑制离子迁移并提高光电性能

最近，有机金属卤化物钙钛矿（OHPs）在光伏、发光二极管、X射线探测器和晶体管方面取得了重大进展。然而，OHPs 臭名昭著的离子迁移问题阻碍了商业化和实际应用。在这里，我们报告了一种简单的基于溶剂的表面钝化策略，使用有机卤化物盐（甲基溴化铵 (MABr) 和苯乙基溴化铵 (PEABr)）来抑制 MAPbBr _{3的离子迁移}单晶。更强的光致发光 (PL) 强度和延长的 PL 寿命证明了表面钝化效应。使用脉冲电压和连续电压电流-电压测量，我们发现由于离子迁移的抑制，具有表面钝化的单晶在表面上显示出可忽略不计的滞后。结果，共面结构器件的暗电流稳定性显着提高。此外，PEABr 处理的垂直结构 X 射线探测器表现出 15 280 μC Gy _air^–1 cm ^{–2的高灵敏度和 87 nGy}_air s ^–1的低检测限在 5 V 偏置下。所提出的技术将成为提高钙钛矿光电器件性能的通用工具。

更新日期：2022-01-28

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