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Photoirradiation-Induced Capacitance Enhancement in the h-WO3/Bi2WO6 Submicron Rod Heterostructure under Simulated Solar Illumination and Its Postillumination Capacitance Enhancement Retainment from a Photocatalytic Memory Effect
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-11-22 , DOI: 10.1021/acsami.1c17386 Huiqin Ma 1, 2 , Weiyi Yang 3 , Shuang Gao 3 , Zifeng Lin 4 , Zheyang Mo 1, 2 , Chao Li 5 , Jian Ku Shang 2 , Qi Li 3
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-11-22 , DOI: 10.1021/acsami.1c17386 Huiqin Ma 1, 2 , Weiyi Yang 3 , Shuang Gao 3 , Zifeng Lin 4 , Zheyang Mo 1, 2 , Chao Li 5 , Jian Ku Shang 2 , Qi Li 3
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Recently, photoassisted charging has been demonstrated as a green and sustainable approach to successfully enhance the capacitance of supercapacitors with low cost and good efficiency. However, their light-induced capacitance enhancement is relatively low and is lost quickly when the illumination is off. In this work, a novel active material system is developed for supercapacitors with the photoassisted charging capability by the decoration of a small amount of Bi2WO6 nanoparticles on an h-WO3 submicron rod surface in situ, which forms a typical type II band alignment heterostructure with a close contact interface through the co-sharing of W atoms between h-WO3 submicron rods and Bi2WO6 nanoparticles. The photogenerated charge carrier separation and transfer are largely enhanced in the h-WO3/Bi2WO6 submicron rod electrode, which subsequently allows more charge carriers to participate in its photoassisted charging process to largely enhance its capacitance improvement under simulated solar illumination than that of the h-WO3 submicron rod electrode. Furthermore, the h-WO3/Bi2WO6 submicron rod electrode could retain its photoinduced capacitance enhancement in the dark for an extended period of time from the photocatalytic memory effect. Thus, our work provides a solution to the two major drawbacks of reported supercapacitors with the light-induced capacitance enhancement property, and supercapacitors based on active materials with the photocatalytic memory effect could be utilized in various technical fields.
中文翻译：
模拟太阳光照下 h-WO3/Bi2WO6 亚微米棒异质结构的光辐射诱导电容增强及其光催化记忆效应的后照电容增强保留
最近，光辅助充电已被证明是一种绿色且可持续的方法，可以以低成本和高效率成功提高超级电容器的电容。然而，它们的光致电容增强相对较低，并且在照明关闭时会迅速消失。在这项工作中，通过在h -WO 3亚微米棒表面原位装饰少量 Bi 2 WO 6纳米粒子，为具有光辅助充电能力的超级电容器开发了一种新型活性材料体系，形成典型的 II 型带通过在h -WO 3亚微米棒和 Bi之间共共享 W 原子，具有紧密接触界面的对齐异质结构2 WO 6纳米颗粒。h -WO 3 /Bi 2 WO 6亚微米棒电极的光生载流子分离和转移大大增强，随后允许更多的载流子参与其光辅助充电过程，从而大大提高了其在模拟太阳光照下的电容改进。所述的ħ -WO 3亚微米杆电极。此外，h -WO 3 /Bi 2 WO 6由于光催化记忆效应，亚微米棒电极可以在黑暗中长时间保持其光致电容增强。因此，我们的工作为已报道的具有光诱导电容增强特性的超级电容器的两个主要缺点提供了解决方案，并且基于具有光催化记忆效应的活性材料的超级电容器可用于各种技术领域。
更新日期：2021-12-08
中文翻译：
模拟太阳光照下 h-WO3/Bi2WO6 亚微米棒异质结构的光辐射诱导电容增强及其光催化记忆效应的后照电容增强保留
最近，光辅助充电已被证明是一种绿色且可持续的方法，可以以低成本和高效率成功提高超级电容器的电容。然而，它们的光致电容增强相对较低，并且在照明关闭时会迅速消失。在这项工作中，通过在h -WO 3亚微米棒表面原位装饰少量 Bi 2 WO 6纳米粒子，为具有光辅助充电能力的超级电容器开发了一种新型活性材料体系，形成典型的 II 型带通过在h -WO 3亚微米棒和 Bi之间共共享 W 原子，具有紧密接触界面的对齐异质结构2 WO 6纳米颗粒。h -WO 3 /Bi 2 WO 6亚微米棒电极的光生载流子分离和转移大大增强，随后允许更多的载流子参与其光辅助充电过程，从而大大提高了其在模拟太阳光照下的电容改进。所述的ħ -WO 3亚微米杆电极。此外，h -WO 3 /Bi 2 WO 6由于光催化记忆效应，亚微米棒电极可以在黑暗中长时间保持其光致电容增强。因此，我们的工作为已报道的具有光诱导电容增强特性的超级电容器的两个主要缺点提供了解决方案，并且基于具有光催化记忆效应的活性材料的超级电容器可用于各种技术领域。
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