In this study, the authors report a series of conjugated block copolymers, PF-b-Piso comprising poly[2,7-(9,9-dihexylfluorene)] (PF), and poly(pendent isoindigo) (Piso) for polymer electret in the photonic field-effect transistor (FET) memory device. The optical properties, surface morphology, and molecular organization of these BCPs are investigated systematically. Accordingly, Piso with absorption in the Ultraviolet C range (UVC, 200–280 nm) possibly rendered the device with a multiband photoresponse, and a good memory performance is achieved by optimizing the polymer composition. Therefore, the memory device comprising PF-b-Piso could perform a high current contrast of 10⁶ to 40⁵ nm light and 10⁵ to 254 nm light over 10⁴ s. In addition, a current contrast of 10⁴ and 10² is achieved in response to 650 and 530 nm light, and this phenomenon can be attributed to the charge transfer between channel and memory layers. The experimental results indicate that the block copolymer design not only conduces to forming a self-assembled microphase separation to stabilize the trapped charge in the polymer electret, but also triggers multiband photoresponding of the photonic FET memory.

中文翻译：

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使用带有悬垂异靛蓝线圈的共轭嵌段共聚物作为聚合物驻极体的多波段光响应场效应晶体管存储器

在这项研究中，作者报告了一系列共轭嵌段共聚物，PF- b- Piso 包含聚[2,7-(9,9-二己基芴)] (PF) 和用于聚合物驻极体的聚（悬垂异靛蓝）（Piso）在光子场效应晶体管 (FET) 存储设备中。系统地研究了这些 BCP 的光学特性、表面形态和分子组织。因此，在紫外线 C 范围（UVC，200-280 nm）中吸收的 Piso 可能使器件具有多波段光响应，并且通过优化聚合物组成实现了良好的存储性能。因此，包含PF- b- Piso的存储器件可以执行 10 ⁶至 40 ⁵ nm 光和 10 ⁵在 10 ⁴秒内达到 254 nm 光。此外，响应650和530nm的光，实现了10 ⁴和10 ²的电流对比度，这种现象可以归因于沟道层和存储层之间的电荷转移。实验结果表明，嵌段共聚物设计不仅有助于形成自组装微相分离以稳定聚合物驻极体中的俘获电荷，而且还触发光子FET存储器的多波段光响应。