Highly Efficient Perovskite‐Quantum‐Dot Light‐Emitting Diodes by Surface Engineering
Advanced Materials
(
IF27.4
)
Pub Date : 2016-08-16, DOI: 10.1002/adma.201600784
Jun Pan
1
,
Li Na Quan
2,
3
,
Yongbiao Zhao
4
,
Wei Peng
1
,
Banavoth Murali
1
,
Smritakshi P. Sarmah
1
,
Mingjian Yuan
2
,
Lutfan Sinatra
1
,
Noktan M. Alyami
1
,
Jiakai Liu
1
,
Emre Yassitepe
2
,
Zhenyu Yang
2
,
Oleksandr Voznyy
2
,
Riccardo Comin
2
,
Mohamed N. Hedhili
5
,
Omar F. Mohammed
1
,
Zheng Hong Lu
4
,
Dong Ha Kim
3
,
Edward H. Sargent
2
,
Osman M. Bakr
1
Affiliation
Division of Physical Science and Engineering; King Abdullah University of Science and Technology; Thuwal 23955-6900 Kingdom of Saudi Arabia
Department of Electrical and Computer Engineering; University of Toronto; 10 King's College Road Toronto Ontario M5S 3G4 Canada
Department of Chemistry and Nano Science; Ewha Woman's University; 52, Ewhayeodae-gil Seodaemun-gu Seoul 03760 Korea
Department of Materials Science and Engineering; University of Toronto; 184 College Street Toronto Ontario M5S 3E4 Canada
Imaging and Characterization Laboratory; King Abdullah University of Science and Technology; Thuwal 23955-6900 Kingdom of Saudi Arabia
A two‐step ligand‐exchange strategy is developed, in which the long‐carbon‐ chain ligands on all‐inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide‐ion‐pair ligands. Green and blue light‐emitting diodes made from the halide‐ion‐pair‐capped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.
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