具有高度收敛层间角的可扩展六方氮化硼/石墨烯双层莫尔材料的外延插层生长,ACS Nano

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具有高度收敛层间角的可扩展六方氮化硼/石墨烯双层莫尔材料的外延插层生长
ACS Nano ( IF 15.8 ) Pub Date : 2021-09-14 , DOI: 10.1021/acsnano.1c03698
Shengnan Wang ₁ , Jack Crowther ₁ , Hiroyuki Kageshima ₂ , Hiroki Hibino ₃ , Yoshitaka Taniyasu ₁

Affiliation

具有特定层间角度的垂直堆叠二维范德华 (vdW) 异质结构表现出特殊的物理特性。如今，大多数堆叠层是通过机械剥离然后以微米空间精度进行精确转移和对准来制造的。这种严格的样品制备成分限制了设备制造的生产力和设备性能的再现性。在这里，我们展示了具有高纯度莫尔相的六方氮化硼 (hBN)/石墨烯双层的一锅化学气相沉积生长。石墨烯在氢封端 hBN 模板下的外延嵌入导致会聚夹层角小于 0.5°。与大于 0.5° 的角度相比，接近 0° 的堆叠角度显示出发生的可能性几乎高出 2 个数量级。由于受到顶部 hBN 层的保护，双层石墨烯与单层石墨烯相比，载流子迁移率显着增强。我们的工作提出了一种具有高均匀性和可控层间旋转的 hBN/石墨烯双层的大规模制造方法，并将促进高质量 vdW 异质结构的生产发展。

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Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moiré Materials with Highly Convergent Interlayer Angles

Vertically stacked two-dimensional van der Waals (vdW) heterostructures with specific interlayer angles exhibit peculiar physical properties. Nowadays, most of the stacked layers are fabricated by mechanical exfoliation followed by precise transfer and alignment with micrometer spatial accuracy. This stringent ingredient of sample preparation limits the productivity of device fabrication and the reproducibility of device performance. Here, we demonstrate the one-pot chemical vapor deposition growth of hexagonal boron nitride (hBN)/graphene bilayers with a high-purity moiré phase. The epitaxial intercalation of graphene under a hydrogen-terminated hBN template leads to convergent interlayer angles of less than 0.5°. The near 0° stacking angle shows almost 2 orders of magnitude higher likelihood of occurrence compared with angles larger than 0.5°. The bilayers show a substantial enhancement of carrier mobility compared with monolayer graphene owing to protection from the top hBN layer. Our work proposes a large-scale fabrication method of hBN/graphene bilayers with a high uniformity and controlled interlayer rotation and will promote the production development for high-quality vdW heterostructures.

更新日期：2021-09-28

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