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Crossover magnetoresistance in non-transferred synthesized graphdiyne film
Carbon ( IF 10.5 ) Pub Date : 2021-08-24 , DOI: 10.1016/j.carbon.2021.08.061
Huifang Kang 1 , Binchang Hua 1 , Lanqing Xu 2 , Xiaoling Zhan 1 , Yongping Zheng 1 , Zhigao Huang 1
Affiliation  

Two-dimensional layered carbon materials such as graphene constructed by sp2 hybridization have raised considerable interest due to their large, non-saturating magnetoresistance. As a new sp-sp2 hybridization structure layered carbon material, the transport performance of graphdiyne has been founded comparable with graphene, while the magnetoresistance remains to be clarified. In this work, we developed a modified non-transferred graphdiyne film synthesized method and studied its magnetoresistance effect. We observed an unexpected temperature-dependent crossover between positive and negative magnetoresistance in graphdiyne film. The film shows negative magnetoresistance at 5–19 K, the maximum intensity of the negative magnetoresistance was about 150% at 5 K under 3 T magnetic field. It presents positive magnetoresistance at 19–21 K under 3 T magnetic field, the magnetoresistance value reached 150% at 20 K. The mechanism of crossover positive and negative magnetoresistance originates from a superposition of the magnetic polaron model and weak localization.



中文翻译:

非转移合成石墨炔薄膜中的交叉磁阻

二维层状碳材料,例如由sp 2杂化构建的石墨烯,由于其大的非饱和磁阻引起了相当大的兴趣。作为新的sp - sp 2杂化结构的层状碳材料,石墨炔的传输性能已与石墨烯相当,而磁阻仍有待阐明。在这项工作中,我们开发了一种改进的非转移石墨炔薄膜合成方法并研究了其磁阻效应。我们观察到石墨炔薄膜中正负磁阻之间出现意外的温度相关交叉。该薄膜在 5-19 K 处显示负磁阻,在 3 T 磁场下,负磁阻的最大强度在 5 K 时约为 150%。在3T磁场下19-21K呈现正磁阻,20K时磁阻值达到150%。

更新日期:2021-08-27
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