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NO2 Gas Sensing Performance of a VO2(B) Ultrathin Vertical Nanosheet Array: Experimental and DFT Investigation
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-06-28 , DOI: 10.1021/acsami.1c05251
Jiran Liang 1, 2 , Qun Lou 1 , Wenhao Wu 1 , Kangqiang Wang 1 , Chang Xuan 1
Affiliation  

A VO2(B) ultrathin vertical nanosheet array was prepared by the hydrothermal method. The influence of the concentration of oxalic acid on the crystal structure and room-temperature NO2 sensing performance was studied. The morphology and crystal structure of the nanosheets were characterized by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. Room-temperature gas sensing measurements of this structure to NO2 with a concentration span from 0.5 to 5 ppm were carried out. The experimental results showed that the thickness of the vertical VO2(B) nanosheet was lower than 20 nm and close to the 2 times Debye length of VO2(B). The response of the sensor based on this structure to 5 ppm NO2 was up to 2.03, and the detection limit was 20 ppb. Its high response performance was due to the fact that the target gas could completely control the entire conductive path by forming depletion layers on the surface of VO2(B) nanosheets. Density functional theory was used to analyze the adsorption of NO2 on the VO2(B) surface. It is found that the band gap of VO2(B) becomes narrower and the Fermi level moves to the valence band after NO2 adsorption, and the density of states near the Fermi level increases significantly. This ultrathin vertical nanosheet array structure can make VO2(B) detect NO2 with high sensitivity at room temperature and therefore has potential applications in the field of low-power-consumption gas sensors.

中文翻译:

VO 2 (B) 超薄垂直纳米片阵列的NO 2气体传感性能:实验和 DFT 研究

通过水热法制备了VO 2 (B) 超薄垂直纳米片阵列。研究了草酸浓度对晶体结构和室温NO 2传感性能的影响。通过扫描电子显微镜、透射电子显微镜和 X 射线衍射表征纳米片的形貌和晶体结构。对该结构进行了浓度跨度为 0.5 至 5 ppm 的NO 2的室温气敏测量。实验结果表明,垂直VO 2 (B)纳米片的厚度小于20 nm,接近VO 2德拜长度的2倍(乙)。基于这种结构的传感器对5 ppm NO 2的响应高达2.03,检测限为20 ppb。其高响应性能是由于目标气体可以通过在VO 2 (B) 纳米片表面形成耗尽层来完全控制整个导电路径。使用密度泛函理论来分析NO 2在VO 2 (B) 表面上的吸附。发现NO 2吸附后VO 2 (B)的带隙变窄,费米能级向价带移动,费米能级附近的态密度显着增加。这种超薄垂直纳米片阵列结构可以使VO 2(B)在室温下以高灵敏度检测 NO 2,因此在低功耗气体传感器领域具有潜在应用。
更新日期:2021-07-14
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