Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment,ACS Applied Materials & Interfaces

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Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-02-08 , DOI: 10.1021/acsami.0c21611
Jiaona Zhang ₁ , Weihong Huang ₁ , Kuan-Chang Chang ₁ , Yuhao Shi ₂ , Changbin Zhao ₂ , Xinwei Wang ₂ , Hong Meng ₂ , Shengdong Zhang ₁ , Min Zhang ₁

Affiliation

For high-performance and high-lifetime flexible and wearable electronic applications, a low-temperature posttreatment method is highly expected to enhance the device performance and repair the defects induced by the low-temperature fabrication process intrinsically. Particularly, if the method can repair the traces induced by the multiple cycles of bending or deforming, it would overcome current fatal obstacles and provide a vital solution to the rapid development of flexible electronics. In this work, we propose a method to apply low-temperature supercritical CO₂ fluid with a dehydration function to improve or even restore the performance of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). After the treatment, the a-IGZO TFT exhibits 3 times improvement drivability up to 0.24 μA/μm, a smaller subthreshold swing of 0.18 V dec^–1, a smaller V_th of 0.25 V, and a larger I_on/I_off ratio of 3.8 × 10⁷. Additionally, the posttreated a-IGZO TFTs possess relatively good uniformity and reproducibility with an on-current standard deviation of 0.047 μA/μm, and the performance of the a-IGZO TFT after the treatment remains almost unchanged even after bending 2500 times at a bending radius of 5 mm. These characteristics are attributed to the improved quality of the channel and gate dielectric. It is worth noting that when this is applied to a flexible TFT-driven organic light-emitting diode lighting system, this treatment method can restore the performance of not only the TFT but also the lighting system, even after the system has been bent more than 600 times and has failed. To date, this is the first time that the bending-track erasing function of the supercritical fluid for flexible systems has been reported, which has the potential to prolong the lifetime of flexible electronics.

中文翻译：

低温超临界脱水处理提高柔性非晶铟镓锌氧化物薄膜晶体管的性能和恢复弯曲

对于高性能和高寿命的柔性和可穿戴电子应用，人们强烈期望低温后处理方法能够增强器件性能并从本质上修复由低温制造工艺引起的缺陷。特别地，如果该方法能够修复由弯曲或变形的多个循环引起的迹线，则它将克服当前的致命障碍，并为柔性电子器件的快速发展提供重要的解决方案。在这项工作中，我们提出了一种应用低温超临界CO _2的方法具有脱水功能的流体可改善甚至恢复柔性非晶铟镓锌氧化物（a-IGZO）薄膜晶体管（TFT）的性能。处理后，a-IGZO TFT的可驱动性提高了3倍，最高可达0.24μA/μm，较小的亚阈值摆幅为0.18 V dec ^–1，较小的V _th为0.25 V，较大的I _on / I _off比为3.8×10 ⁷。此外，后处理的a-IGZO TFT具有相对较好的均匀性和可重复性，导通电流标准偏差为0.047μA/μm，即使在弯曲2500次后弯曲，处理后的a-IGZO TFT的性能也几乎保持不变。半径为5毫米。这些特性归因于沟道和栅极电介质质量的提高。值得注意的是，当将这种方法应用于柔性TFT驱动的有机发光二极管照明系统时，即使在系统弯曲超过50mm之后，这种处理方法不仅可以恢复TFT的性能，还可以恢复照明系统的性能。 600次，并已失败。迄今为止，这是首次报道了用于柔性系统的超临界流体的弯曲轨迹消除功能，

更新日期：2021-02-24

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