Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature,Crystal Growth & Design

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Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-02-03 , DOI: 10.1021/acs.cgd.0c01485
Dhruba Pattadar ₁ , Quintin Cheek ₁ , Andrea Sartori ₂ , Yifan Zhao ₁ , Rajendra P. Giri ₂ , Bridget Murphy _{2,

3} , Olaf Magnussen _{2,

3} , Stephen Maldonado _{1,

4}

Affiliation

Room-temperature electrodeposition of Ge crystallites was investigated by the electrochemical liquid–liquid–solid (ec-LLS) process using a family of Hg_1–xIn_x alloys. The objective was to determine whether different liquid metal alloys with nominally the same bulk solubility toward Ge but potentially different surface character would yield any differences in the resultant Ge crystallites. Variation of the In fraction in these alloys was the control variable. The following details were ascertained from the cumulative data. First, in accordance with thermodynamic predictions, the surface of Hg_xIn_1–x alloys was strongly enriched with Hg according to X-ray specular reflectivity data. These data further indicated that the surface enrichment was confined exclusively to a single atomic layer at the liquid metal surface. These properties of the Hg_1–xIn_x/electrolyte interface structure facilitated the first two steps of the ec-LLS process. Second, the presence of In influenced the morphology of the resultant Ge crystallites from ec-LLS, in accordance with mediated transport of the Ge upon initial electroreduction. Specifically, X-ray diffraction, Raman, and microscopy data suggest that a strong affinity between In and Ge that affects the crystal morphology. This study thus motivates further exploration of both In as a component in liquid metal solvents to facilitate grain size and more general studies detailing how the surface structure and composition of liquid metals influence crystal growth. These findings significantly advance the prospect for preparing technologically relevant inorganic crystalline semiconductors at low temperatures.

中文翻译：

室温下液态Hg-In合金中铟在Ge晶体生长过程中促进表面迁移的证据

使用Hg _{1- x} In _x合金族，通过电化学液-液-固（ec-LLS）工艺研究了Ge微晶的室温电沉积。目的是确定名义上对Ge具有相同的整体溶解度但潜在地具有不同表面特性的不同液态金属合金是否会在生成的Ge微晶中产生任何差异。这些合金中In分数的变化是控制变量。从累积数据确定以下细节。首先，根据热力学预测，Hg _x In _1–_x的表面根据X射线镜面反射率数据，合金中的Hg含量很高。这些数据进一步表明，表面富集仅限于液态金属表面的单个原子层。Hg _{1– x} In _x的这些属性电解质界面结构简化了ec-LLS工艺的前两个步骤。其次，In的存在影响了从ec-LLS生成的Ge晶体的形态，这与初始电还原时Ge的介导转运相一致。具体而言，X射线衍射，拉曼光谱和显微镜数据表明，In和Ge之间的强亲和力会影响晶体形态。因此，这项研究促使人们进一步研究In作为液态金属溶剂中的一种组分以促进晶粒尺寸，并且开展了更广泛的研究，详细介绍了液态金属的表面结构和组成如何影响晶体生长。这些发现极大地促进了在低温下制备技术上相关的无机晶体半导体的前景。

更新日期：2021-03-03

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