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The degradation of CVD-grown MoS2 domains in atmospheric environment
Materials Letters ( IF 2.7 ) Pub Date : 2021-01-30 , DOI: 10.1016/j.matlet.2021.129421
Jing Li , Shike Hu , Shuang Wang , He Kang , Zhiying Chen , Sunwen Zhao , Yanhui Zhang , Yanping Sui , Guanghui Yu

The stability of two-dimensional transition metal chalcogenides (TMDCs) is important for their reliable device applications in nanoelectronics and optoelectronics. Here, we report the degradation of MoS2 grown by chemical vapor deposition (CVD) in atmospheric environment. Through high-pressure treatment and water immersion of molybdenum disulfide (MoS2) samples, we found that moistures will permeate into the interface between MoS2 and sapphire to accelerate oxidation. Therefore, isolating oxygen and moistures is beneficial to improve the long-term stability of TMDCs. Our study deepens the understanding of MoS2 degradation process and provides an important basis for the stability improvement of TMDCs.



中文翻译:

大气中CVD生长的MoS 2域的降解

二维过渡金属硫属元素化物(TMDC)的稳定性对其在纳米电子学和光电子学中的可靠器件应用至关重要。在这里,我们报告了在大气环境中通过化学气相沉积(CVD)生长的MoS 2的降解。通过高压处理和将二硫化钼(MoS 2)样品浸入水中,我们发现水分会渗透到MoS 2和蓝宝石之间的界面中,从而加速氧化。因此,隔离氧气和水分有利于提高TMDC的长期稳定性。我们的研究加深了对MoS 2降解过程的理解,并为提高TMDCs的稳定性提供了重要依据。

更新日期:2021-02-17
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