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Single Copper Atoms Enhance Photoconductivity in g-C3N4
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-10-05 , DOI: 10.1021/acs.jpclett.0c02756 Matt D. Capobianco 1 , Brian Pattengale 1 , Jens Neu 2 , Charles A. Schmuttenmaer 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-10-05 , DOI: 10.1021/acs.jpclett.0c02756 Matt D. Capobianco 1 , Brian Pattengale 1 , Jens Neu 2 , Charles A. Schmuttenmaer 1
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Graphitic carbon nitride (g-C3N4) and its doped analogues have been studied over the past decade in part due to their promising applications in heterogeneous photocatalysis; however, the effect of doping on the photoconductivity is poorly understood. Herein, we investigate Cu doped g-C3N4 (Cu-g-C3N4) and demonstrate via extended X-ray absorption fine structure that Cu+ incorporates as an individual ion. Time-resolved optical pump terahertz probe spectroscopy was utilized to measure the ultrafast photoconductivity in response to a 400 nm pump pulse and showed that the Cu+ dopant significantly enhances photoconductivity of the as-prepared powdered sample, which decays within 10 ps. Furthermore, a film preparation technique was applied that further enhanced the photoconductivity and induced a longer-lived photoconductive state with a lifetime on the order of 100 ps. This study provides valuable insight into the ultrafast photoconductivity dynamics of g-C3N4 materials, which is essential toward developing efficient g-C3N4 photocatalysts.
中文翻译：
单铜原子增强gC 3 N 4中的光电导性
过去十年来研究了石墨碳氮化物（gC 3 N 4）及其掺杂的类似物，部分原因是它们在非均相光催化中的应用前景广阔。然而，人们对掺杂对光导性的影响了解甚少。在此，我们研究了掺杂Cu的gC 3 N 4（Cu-gC 3 N 4），并通过扩展的X射线吸收精细结构证明了Cu +作为单个离子结合。时间分辨光泵太赫兹探针光谱用于测量响应400 nm泵浦脉冲的超快光电导性，结果表明Cu +掺杂剂显着增强了所制备粉末状样品的光电导性，其在10 ps内衰减。此外，应用了膜制备技术，其进一步增强了光电导性并诱导了寿命更长的光电导状态，其寿命约为100 ps。这项研究为gC 3 N 4材料的超快光电导动力学提供了宝贵的见识，这对于开发有效的gC 3 N 4光催化剂至关重要。
更新日期：2020-10-16
中文翻译：
单铜原子增强gC 3 N 4中的光电导性
过去十年来研究了石墨碳氮化物（gC 3 N 4）及其掺杂的类似物，部分原因是它们在非均相光催化中的应用前景广阔。然而，人们对掺杂对光导性的影响了解甚少。在此，我们研究了掺杂Cu的gC 3 N 4（Cu-gC 3 N 4），并通过扩展的X射线吸收精细结构证明了Cu +作为单个离子结合。时间分辨光泵太赫兹探针光谱用于测量响应400 nm泵浦脉冲的超快光电导性，结果表明Cu +掺杂剂显着增强了所制备粉末状样品的光电导性，其在10 ps内衰减。此外，应用了膜制备技术，其进一步增强了光电导性并诱导了寿命更长的光电导状态，其寿命约为100 ps。这项研究为gC 3 N 4材料的超快光电导动力学提供了宝贵的见识，这对于开发有效的gC 3 N 4光催化剂至关重要。
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