Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth,Physica Status Solidi (B) - Basic Solid State Physics

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Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-10-01 , DOI: 10.1002/pssb.202000400
David Alcer ₁ , Aditya P. Saxena ₁ , Lukas Hrachowina ₁ , Xianshao Zou ₂ , Arkady Yartsev ₂ , Magnus T. Borgström ₁

Affiliation

Nanowire (NW) arrays containing a top segment of Ga_xIn_1–xP are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle‐assisted vapor–liquid–solid (VLS) growth of Ga_xIn_1–xP NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time‐resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p‐type dopant diethylzinc (DEZn) on the NW composition, observed for Ga_xIn_1–xP NWs grown using TMGa, is absent when using TEGa.

中文翻译：

GaInP纳米线生长的三乙基镓和三甲基镓前体的比较

研究了包含Ga _x In _{1- x} P顶部片段的纳米线（NW）阵列，比较了使用两种不同的Ga前体三甲基镓（TMGa）和三乙基镓（TEGa）生长的NW。TMGa是通常用于Ga _x In _1–_x的颗粒辅助气液固（VLS）生长的前体P NW。但是，在典型的NW生长条件下，热解效率低下。通过直接比较使用TEGa和TMGa在其他条件相同的生长条件下生长的NW之间，研究了替代前体TEGa的使用。研究了生长速率，产生的NW材料成分以及时间分辨的光致发光（TRPL）寿命。随着NW的Ga含量增加，TRPL寿命缩短，表明与GaP相关的陷阱状态。使用TEGa生长的样品的TRPL寿命更长一些，表明深陷阱态的浓度较低。对于掺杂的NW，发现Ga _x In _1–_x中观察到p型掺杂剂二乙基锌（DEZn）对NW的强烈影响。使用TEGa时，不存在使用TMGa生长的P NW。

更新日期：2020-10-01

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