The technology of FinFET has led to the continuity of device scaling and enabled the prolongation of Moore’s Law towards the 7nm and beyond nodes. The metal gate cut(MGC) will be widely adopted since it can provide better SiP/SiGe growth environment, improve yield, and enhance electrical performance. However, this approach requires more complex process engineering at 3D structure. Both perfect physical structure and good electronic performance are challenging for metal gate cut last process. This paper will introduce metal gate cut process to form separation transistor. This definitely requires large CD shrinkage etch process to avoid lithography limitation and channel while meeting all the physical targets.

中文翻译：

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金属门切割工艺开发

FinFET的技术已导致器件缩放的连续性，并使摩尔定律向7nm及以上节点扩展。金属栅切割（MGC）将被广泛采用，因为它可以提供更好的SiP / SiGe生长环境，提高良率并增强电气性能。但是，这种方法需要在3D结构上进行更复杂的过程工程。完美的物理结构和良好的电子性能对于金属浇口最后切割工艺都具有挑战性。本文将介绍金属栅切割工艺以形成分离晶体管。这肯定需要大的CD收缩蚀刻工艺，以在满足所有物理目标的同时避免光刻限制和通道。