Abstract The electrochemical performance of sulfur-doped carbon nanotubes (S-CNTs) was investigated to confirm the S-doping effects and the possibility of their application as conducting agents in supercapacitor electrodes. S-CNTs were successfully synthesized via chemical vapor deposition using dimethyl disulfide as the carbon source. They were purified to obtain purified S-CNTs (P–S-CNTs) with diameters 30–50 nm and S content of 0.65 at%. The doped S atoms were removed partially from the P–S-CNTs by heat treatment in H2 atmosphere (De-P-S-CNTs). To compare the electrochemical performances of various conducting materials for supercapacitor electrodes, commercial activated carbon (MSP20) was used as the active material and commercial conducting agent (Super-P), commercial multi-walled CNTs (MWCNTs), De-P-S-CNTs, and P–S-CNTs were used as the conducting agents. The electrode with P–S-CNTs exhibited the highest specific capacitance at a high discharge current density of 100 mA cm−2 (120.2 F g−1) and the lowest charge-transfer resistance (6.19 Ω) that are significantly superior to those of Super-P (83.9 F g−1 and 15.16 Ω), MWCNTs (87.8 F g−1 and 17.02 Ω), and De-P-S-CNTs (90.1 F g−1 and 22.33 Ω). The superior electrochemical performance of P–S-CNTs can be attributed to the excellent electrical conductivity and pseudocapacitive contribution of the S-doping effect.

中文翻译：

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掺硫碳纳米管作为超级电容器电极中的导电剂

摘要 研究了硫掺杂碳纳米管 (S-CNTs) 的电化学性能，以确认 S 掺杂效应及其在超级电容器电极中作为导电剂应用的可能性。使用二甲基二硫化物作为碳源，通过化学气相沉积成功合成了 S-CNT。将它们纯化以获得直径为 30-50 nm 且 S 含量为 0.65 at% 的纯化 S-CNT（P-S-CNT）。通过在 H2 气氛（De-PS-CNTs）中热处理，掺杂的 S 原子从 P-S-CNTs 中部分去除。为了比较用于超级电容器电极的各种导电材料的电化学性能，使用商业活性炭（MSP20）作为活性材料和商业导电剂（Super-P）、商业多壁碳纳米管（MWCNTs）、De-PS-CNTs、和 P-S-CNTs 被用作导电剂。具有 P-S-CNTs 的电极在 100 mA cm-2 (120.2 F g-1) 的高放电电流密度下表现出最高的比电容和最低的电荷转移电阻 (6.19 Ω)，明显优于Super-P（83.9 F g-1 和 15.16 Ω）、MWCNT（87.8 F g-1 和 17.02 Ω）和 De-PS-CNT（90.1 F g-1 和 22.33 Ω）。P-S-CNTs 优异的电化学性能可归因于 S 掺杂效应的优异导电性和赝电容贡献。8 F g-1 和 17.02 Ω）和 De-PS-CNT（90.1 F g-1 和 22.33 Ω）。P-S-CNTs 优异的电化学性能可归因于 S 掺杂效应的优异导电性和赝电容贡献。8 F g-1 和 17.02 Ω）和 De-PS-CNT（90.1 F g-1 和 22.33 Ω）。P-S-CNTs 优异的电化学性能可归因于 S 掺杂效应的优异导电性和赝电容贡献。