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Temporally Controlled Curing of Block Polymers in the Disordered State Using Thermally Stable Photoacid Generators for the Preparation of Nanoporous Membranes
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2019-04-30 00:00:00 , DOI: 10.1021/acsapm.9b00150
Nicholas Hampu , Marc A. Hillmyer

A lamellar forming poly(styrene-stat-glycidyl methacrylate)-block-polylactide, P(S-s-GMA)-b-PLA, diblock polymer containing the photoacid generator 4-iodophenyldiphenylsulfonium triflate (IST) was heated above its order–disorder transition temperature, TODT, and subsequently irradiated with UV light to kinetically trap the disordered state by acid-catalyzed cross-linking through the reactive GMA units. We demonstrated that IST remained thermally stable over relevant cross-linking temperatures and times allowing for the independent control over both the thermally induced disordering process and the onset of cross-linking, in contrast to related thermal cross-linking agents. Post removal of the PLA component, the photocured samples displayed a high degree of nanoporosity across a broad cross-linking temperature range that extends to at least 75 °C above the TODT. In-situ photocuring during small-angle X-ray scattering revealed that the cross-linking reaction had a minimal effect on the domain structure. Finally, we demonstrated that highly selective ultrafiltration membranes could be fabricated by spin-coating a P(S-s-GMA)-b-PLA diblock polymer containing IST onto a commercial polysulfone support, irradiating with UV light in the disordered state, and removing the sacrificial PLA domains.

中文翻译:

使用热稳定的光致产酸剂在无序状态下临时控制嵌段聚合物的固化,以制备纳米多孔膜

层状形成聚(苯乙烯STAT -缩水甘油基甲基丙烯酸酯) -嵌段-polylactide,P(S-小号-GMA) - b -PLA,含有该光致酸生成4-三氟甲磺酸酯iodophenyldiphenylsulfonium(IST)二嵌段聚合物其有序-无序上述加热转变温度,T ODT然后用紫外线照射,通过反应性GMA单元进行酸催化的交联,从而动态捕获无序状态。我们证明,与相关的热交联剂相比,IST在相关的交联温度和时间范围内保持热稳定,从而可以独立控制热诱导的无序过程和交联的开始。除去PLA成分后,光固化样品在较宽的交联温度范围内显示出高度的纳米孔隙度,该温度范围比T ODT高至少75°C。小角度X射线散射过程中的原位光固化表明,交联反应对畴结构的影响最小。最后,我们证明了可以通过将包含IST的P(S- s -GMA)-b -PLA二嵌段聚合物旋涂到市售聚砜载体上,用无序状态的紫外线照射并去除来制备高选择性超滤膜。牺牲PLA域。
更新日期:2019-04-30
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