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All-Dielectric Silicon Nanogap Antennas To Enhance the Fluorescence of Single Molecules
Nano Letters ( IF 9.6 ) Pub Date : 2016-07-15 00:00:00 , DOI: 10.1021/acs.nanolett.6b02076 Raju Regmi 1, 2 , Johann Berthelot 1 , Pamina M. Winkler 2 , Mathieu Mivelle 3 , Julien Proust 1 , Frédéric Bedu 4 , Igor Ozerov 4 , Thomas Begou 1 , Julien Lumeau 1 , Hervé Rigneault 1 , María F. García-Parajó 2, 5 , Sébastien Bidault 6 , Jérôme Wenger 1 , Nicolas Bonod 1
Nano Letters ( IF 9.6 ) Pub Date : 2016-07-15 00:00:00 , DOI: 10.1021/acs.nanolett.6b02076 Raju Regmi 1, 2 , Johann Berthelot 1 , Pamina M. Winkler 2 , Mathieu Mivelle 3 , Julien Proust 1 , Frédéric Bedu 4 , Igor Ozerov 4 , Thomas Begou 1 , Julien Lumeau 1 , Hervé Rigneault 1 , María F. García-Parajó 2, 5 , Sébastien Bidault 6 , Jérôme Wenger 1 , Nicolas Bonod 1
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Plasmonic antennas have a profound impact on nanophotonics as they provide efficient means to manipulate light and enhance light–matter interactions at the nanoscale. However, the large absorption losses found in metals can severely limit the plasmonic applications in the visible spectral range. Here, we demonstrate the effectiveness of an alternative approach using all-dielectric nanoantennas based on silicon dimers to enhance the fluorescence detection of single molecules. The silicon antenna design is optimized to confine the near-field intensity in the 20 nm nanogap and reach a 270-fold fluorescence enhancement in a nanoscale volume of λ3/1800 with dielectric materials only. Our conclusions are assessed by combining polarization resolved optical spectroscopy of individual antennas, scanning electron microscopy, numerical simulations, fluorescence lifetime measurements, fluorescence burst analysis, and fluorescence correlation spectroscopy. This work demonstrates that all-silicon nanoantennas are a valid alternative to plasmonic devices for enhanced single molecule fluorescence sensing, with the additional key advantages of reduced nonradiative quenching, negligible heat generation, cost-efficiency, and complementary metal–oxide–semiconductor (CMOS) compatibility.
中文翻译：
全介电硅纳米间隙天线增强单个分子的荧光。
等离子体天线对纳米光子学产生了深远的影响，因为它们提供了有效的手段来操纵光并增强纳米级的光-物质相互作用。但是，金属中的大量吸收损失会严重限制等离子在可见光谱范围内的应用。在这里，我们演示了使用基于硅二聚体的全介电纳米天线来增强单个分子的荧光检测的替代方法的有效性。硅天线设计进行了优化，以限制在20纳米的纳米间隙的近场强度和在λ纳米尺度体积达到270倍的荧光增强3/ 1800仅适用于介电材料。我们的结论是通过结合单个天线的偏振分辨光谱法，扫描电子显微镜，数值模拟，荧光寿命测量，荧光猝发分析和荧光相关光谱法来评估的。这项工作表明，全硅纳米天线是用于增强单分子荧光传感的等离激元器件的有效替代品，另外还具有减少非辐射猝灭，可忽略的热量产生，成本效益以及互补的金属氧化物半导体（CMOS）的其他关键优势。兼容性。
更新日期：2016-07-15
中文翻译：
全介电硅纳米间隙天线增强单个分子的荧光。
等离子体天线对纳米光子学产生了深远的影响，因为它们提供了有效的手段来操纵光并增强纳米级的光-物质相互作用。但是，金属中的大量吸收损失会严重限制等离子在可见光谱范围内的应用。在这里，我们演示了使用基于硅二聚体的全介电纳米天线来增强单个分子的荧光检测的替代方法的有效性。硅天线设计进行了优化，以限制在20纳米的纳米间隙的近场强度和在λ纳米尺度体积达到270倍的荧光增强3/ 1800仅适用于介电材料。我们的结论是通过结合单个天线的偏振分辨光谱法，扫描电子显微镜，数值模拟，荧光寿命测量，荧光猝发分析和荧光相关光谱法来评估的。这项工作表明，全硅纳米天线是用于增强单分子荧光传感的等离激元器件的有效替代品，另外还具有减少非辐射猝灭，可忽略的热量产生，成本效益以及互补的金属氧化物半导体（CMOS）的其他关键优势。兼容性。
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