Herein, pristine indium oxide (In₂O₃) and rare earth (Ce, Tm, Eu, Er, and Tb)-doped In₂O₃ nanotubes were synthesized by a facile one-step electrospinning method. Rare-earth (RE) doping increases the number of active sites on the surface, which enhances the electrical response and gas-sensing performance of In₂O₃, with different RE elements causing different enhancement effects. Transmission electron microscopy elemental mapping shows a homogeneous distribution of RE elements on the whole nanotube. Analysis of the gas-sensing mechanism shows that RE doping modifies the oxygen species adsorbed on the sensor surface. Our findings promote the development of new dopant-based metal oxide semiconductors for high-performance gas sensing.

在此，通过简便的一步骤电纺丝法合成了掺杂有原始氧化铟（In ₂ O ₃）和稀土元素（Ce，Tm，Eu，Er和Tb）的In ₂ O ₃纳米管。稀土（RE）掺杂会增加表面上的活性位点数量，从而增强In ₂ O ₃的电响应和气敏性能，不同的RE元素会产生不同的增强效果。透射电子显微镜的元素图谱显示RE元素在整个纳米管上的均匀分布。对气体传感机制的分析表明，稀土元素掺杂会改变吸附在传感器表面的氧种类。我们的发现促进了用于高性能气体传感的新型基于掺杂剂的金属氧化物半导体的开发。