Opportunity of the Lead-Free All-Inorganic Cs3Cu2I5 Perovskite Film for Memristor and Neuromorphic Computing Applications.,ACS Applied Materials & Interfaces

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Opportunity of the Lead-Free All-Inorganic Cs3Cu2I5 Perovskite Film for Memristor and Neuromorphic Computing Applications.
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-05-06 , DOI: 10.1021/acsami.0c03106
Fanju Zeng _{1,

2} , Yuanyang Guo ₁ , Wei Hu ₁ , Yongqian Tan ₂ , Xiaomei Zhang ₂ , Julin Feng ₁ , Xiaosheng Tang ₁

Affiliation

Recently, several types of lead halide perovskites have been demonstrated as active layers in resistive switching memory or artificial synaptic devices for neuromorphic computing applications. However, the thermal instability and toxicity of lead halide perovskites severely restricted their further practical applications. Herein, the environmentally friendly and uniform Cs3Cu2I5 perovskite films are introduced to act as the active layer in the Ag/Cs3Cu2I5/ITO memristor. Generally, the Ag ions could react with iodide ions and form AgIx compounds easily, so the Ag/PMMA/Cs3Cu2I5/ITO memristor was designed by employing the ultrathin polymethylmethacrylate (PMMA) layer to avoid the direct contact between the top Ag electrode and Cs3Cu2I5 perovskite films. After optimization, the obtained memristor demonstrated bipolar resistive switching with low operating voltage (< ±1 V), large on/off ratio (102), stable endurance (100 cycles), and long retention (>104 s). Additionally, biological synaptic behaviors including long-term potentiation and long-term depression have been investigated. By using the MNIST handwritten recognition data set, the handwritten recognition rate based on experimental data could reach 94%. In conclusion, our work provides the opportunity of exploring the novel application for the development of next-generation neuromorphic computing based on lead-free halide perovskites.

中文翻译：

无铅全无机Cs3Cu2I5钙钛矿薄膜在忆阻器和神经形态计算应用中的机会。

近来，已经证明几种类型的卤化钙钛矿作为用于神经形态计算应用的电阻开关存储器或人工突触设备中的活性层。但是，卤化钙钛矿的热不稳定性和毒性严重限制了其进一步的实际应用。在此，引入了环保且均匀的Cs3Cu2I5钙钛矿薄膜，作为Ag / Cs3Cu2I5 / ITO忆阻器中的活性层。通常，Ag离子可与碘离子反应并容易形成AgIx化合物，因此采用超薄聚甲基丙烯酸甲酯（PMMA）层设计了Ag / PMMA / Cs3Cu2I5 / ITO忆阻器，以避免顶部Ag电极与Cs3Cu2I5钙钛矿直接接触。电影。经过优化后，所获得的忆阻器具有低工作电压（<±1 V），大开/关比（102），稳定的耐久性（100个循环）和长的保持时间（> 104 s）的双极电阻式开关。另外，已经研究了包括长期增强和长期抑制的生物学突触行为。通过使用MNIST手写识别数据集，基于实验数据的手写识别率可以达到94％。总之，我们的工作为探索基于无铅卤化物钙钛矿的下一代神经形态计算开发的新颖应用提供了机会。已经研究了包括长期增强和长期抑制的生物学突触行为。通过使用MNIST手写识别数据集，基于实验数据的手写识别率可以达到94％。总之，我们的工作为探索基于无铅卤化物钙钛矿的下一代神经形态计算开发的新颖应用提供了机会。已经研究了包括长期增强和长期抑制的生物学突触行为。通过使用MNIST手写识别数据集，基于实验数据的手写识别率可以达到94％。总之，我们的工作为探索基于无铅卤化物钙钛矿的下一代神经形态计算开发的新颖应用提供了机会。

更新日期：2020-04-27

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