教育背景
2015年-2020年 山东大学 微电子学院 微电子学与固体电子学 博士
2010年-2014年 山东大学 物理学院 物理学 学士
工作经历
讲师
2023年-至今 天津理工大学集成电路科学与工程学院
助理研究员
2020年-2023年 中国工程物理研究院应用电子学研究所
研究方向
短波红外光电探测器
发表文章
1. Structural, optical and electrical properties of epitaxial rutile SnO2 films grown on MgF2 (110) substrates by MOCVD, Ceramics International, 44 (2018) 869–873.
2. Characterization of rutile SnO2 epitaxial films grown on MgF2 (001) substrates by MOCVD, Crystal research and technology, 53 (2018) 1700168
3. Effect of niobium doping on the structural, electrical and optical properties of epitaxial SnO2 films on MgF2 (110) substrates by MOCVD, Journal of Alloys and Compounds, 741 (2018) 677-681
4. Structural, photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substrates, Ceramics International, 45(2019) 10196-10202.
5. UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition, Materials Research Bulletin, 118 (2019) 110488.
6. Preparation and characterization of heteroepitaxial Zn2SnO4 single crystalline films prepared on MgO (100) substrates, Journal of the American Ceramic Society, 103 (2020) 2555-2561.
7. Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films, Optical Materials, 108 (2020) 110224.
8. Preparation and Characterization of High Mobility Nb-Doped SnO2 Transparent Conducting Films, Materials Science Forum, 993 (2020) 869-875.
9. 大功率780 nm 半导体激光器的设计与制备, 强激光与粒子束, 33 (2021), 091001. (中文核心)
10. Investigation of the gain match in high brightness 980 nm tapered diode laser, Journal of Luminescence, 257 (2023) 119644.
11.Enhanced performance of ultraviolet photodetector based on amorphous Ga2O3 films through formation of heterojunction with ZnO nanoparticles. Materials Science in Semiconductor Processing 173 (2024) 1081
专利
1.一种高迁移率铌掺杂氧化锡单晶薄膜的制备方法，发明人：栾彩娜、马瑾、何林安，授权公告号：CN 107419333 B，专利号：ZL 2017 1 0551026.9
2.一种高质量锡酸锌单晶薄膜及其制备方法，发明人：马瑾、栾彩娜、何林安，授权公告号：CN 110172733 B，专利号：ZL 2019 1 0536407.9
3.一种半导体激光器结构，发明人：何林安、周坤、杜维川、李弋、高松信、唐淳，授权公告号：CN 112615258 B，专利号：ZL 2020 1 1396116.3