教育背景
2011.09至2014.05，弗吉尼亚理工大学（美国），电子工程学院，博士；
2008.09至2011.06，中国科学院，半导体研究所，硕士；
2004.09至2008.09，山东大学，物理学院，学士；
工作经历
首席工程师
2017.01至2022.10 朗姆通公司；
高级研发工程师
2016.04至2017.01 Alta Devices；
芯片工程师
2014.06至2016.03 东芝电子美国公司；
研究方向
短波红外光电探测器
发表文章
1. Y. Zhu, et al., "Tensile strained nano-scale Ge/In0.16Ga0.84As heterostructure for tunnel field-effect transistor", ACS Appl. Mater. Interfaces 6, 4947 (2014).
2. Y. Zhu, et al., “Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials”, J. Appl. Phys. 116, 134304 (2014).
3. Y. Zhu, et al, "Reliability studies on high-temperature operation of mixed As/Sb staggered gap tunnel FET material and devices", IEEE Trans. Device Mat. Rel. 14, 246 (2014).
4. Y. Zhu, et al, “X-ray photoelectron spectroscopy analysis and band offset determination of CeO2 deposited on epitaxial (100), (110) and (111)Ge”, J. Vac. Sci. Technol. B 32, 011217 (2014).
5. Y. Zhu and M. K. Hudait (Invited), "Low-power tunnel field effect transistors using mixed As and Sb based heterostructures", Nanotechnology Reviews 2, 637 (2013).
6. Y. Zhu, et al, "Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy", J. Vac. Sci. Technol. B 31, 041203 (2013).
7. Y. Zhu, et al, “Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application”, J. Appl. Phys. 113, 024319 (2013).
8. Y. Zhu, et al, “Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure”, J. Appl. Phys. 112, 094312 (2012).
9. Y. Zhu, et al, “Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure”, Appl. Phys. Lett. 101, 112106 (2012).
10. Y. Zhu, et al, “Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel FET structures grown by molecular beam epitaxy”, J. Appl. Phys. 112, 024306 (2012).
11. Y. Zhu, et al, “Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy”, Optoelectronics Lett. 7, 325 (2011).
12. Y. Zhu, et al, “GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy”, J. Semiconductors 32, 083001 (2011).
13. M. Clavel, P. Goley, N. Jain, Y. Zhu, et al., “Strain-Engineered Biaxial Tensile Epitaxial Germanium for High- Performance Ge/InGaAs Tunnel Field-Effect Transistors”, IEEE J. Electron Devices Soc. 3, 184 (2015).
14. M. K Hudait, M. Clavel, Y. Zhu, et al., “Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications”, ACS Appl. Mater. Inter. 7, 5471 (2015).
15. J. S. Liu, Y. Zhu, et al., “Heterointerface engineering of broken-gap InAs/GaSb multilayer structures”, ACS Appl. Mater. Inter. 7, 2512 (2015).
16. M. K. Hudait, Y. Zhu, et al., “Mixed-anion GaAs1−ySby graded buffer heterogeneously integrated on Si by molecular beam epitaxy”, Appl. Phys. Express 8, 025501 (2015).
17. M. K. Hudait, M. Clavel, P. Goley, N. Jain, Y. Zhu, “Heterogeneous integration of epitaxial Ge on Si using AlAs/GaAs buffer architecture: Suitability for low-power fin field-effect transistors”, Scientific reports (2014).
18. B. Rajamohanan, D. Mohata, Y. Zhu, et al, “Design, fabrication and analysis of P-channel Arsenide/Antimonide Hetero-junction Tunnel Transistors”, J. Appl. Phys. 115, 044502 (2014).
19. N. Jain, Y. Zhu, et al, “Interfacial band alignment and structural properties of nanoscale TiO2 high-k gate dielectric for integration with epitaxial crystallographic oriented germanium”, J. Appl. Phys. 115, 024303 (2014).
20. M. Li, Y. Yu, J. He, L. Wang, Y. Zhu, et al, “In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots”, Nanoscale Res. Lett. 8, 86 (2013).
21. M. K. Hudait, Y. Zhu, et al, “BaTiO3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices”, ACS Appl. Mater. Interfaces 5, 11446 (2013).
22. M. K. Hudait, Y. Zhu, et al, "Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge", J. Appl. Phys. 114, 024303 (2013).
23. J. Wang, G. Wang, Y. Xu, J. Xing, W. Xiang, B. Tang, Y. Zhu, et al, “Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure”, J. Appl. Phys. 114, 013704 (2013).
24. M. K. Hudait, Y. Zhu, et al, "Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110) and (111)A GaAs substrates by molecular beam epitaxy", J. Appl. Phys. 113, 134311 (2013).
25. M. K. Hudait and Y. Zhu, "Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge and (111)Ge layers", J. Appl. Phys. 113, 114303 (2013).
26. M. K. Hudait, Y. Zhu, et al, "Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy", Appl. Phys. Lett. 102, 093119 (2013).
27. M. K. Hudait, Y. Zhu, et al, "Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy", Appl. Phys. Lett. 102, 093109 (2013).
28. M. K. Hudait, Y. Zhu, et al,"Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110) and (111)A GaAs substrates", J. Vac. Sci. Technol. B 31, 011206 (2013).
29. M. K. Hudait, Y. Zhu, et al, "In-situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100)GaAs substrates using molecular beam epitaxy", J. Vac. Sci. Technol. B 30, 051205 (2012).
30. Y. Yu, M. Li, J. He, Y. Zhu, et al, “Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy”, Nanotechnology 23, 065706 (2012).
31. J. F. He, H. L. Wang, X. J. Shang, M. F. Li, Y. Zhu, et al, “GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy”, J. Phys. D 44, 335102 (2011).
32. X. J. Shang, J. F. He, H. L. Wang, M. F. Li, Y. Zhu, et al, “Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell”, Appl. Phys. A 103, 335 (2011).
33. J. He, X. Shang, M. Li, Y. Zhu, et al, “Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy”, J. Semiconductors 32, 043004 (2011).
34. J. F. He, Z. C. Niu, X. Y. Chang, H. Q. Ni, Y. Zhu, et al, “Molecular beam epitaxy growth of GaAs on an offcut Ge substrate”, Chinese Physics B 20, 018102 (2011).
参与项目
1. 976nm波长锁定35W MOPA大功率激光器、企业内部研发项目、2020年6月-2021年6月、首席研发与集成工程师
2. 1310nm 800mW级别大功率激光光源、企业内部研发项目、2020年10月-2021年10月、首席研发与集成工程师
3. 920nm超大功率泵谱激光芯片、企业内部研发项目、2018年6月-2020年12月、首席研发工程师
4. 人脸识别940nm垂直腔面激光芯片、企业内部研发项目、2017年1月-2018年6月、首席研发工程师
5. 下一代人脸识别940 nm边发射激光芯片、、企业内部研发项目、2018年1月-2019年1月、首席研发工程师
专利
1. US Patent 9679762, “Access Conductivity Enhanced High Electron Mobility Transistor”, 2015-03.
2.US Patent 11038080, “Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching”, 2021-06
奖项和荣誉
1.2013年度“国家优秀自费留学生奖学金”；
2.2013年度美国真空学会全球研究论文前20名；
3.山东大学优秀学生奖学金（多次）。