教育背景
2017.09-2021.06，法国国立应用科学院，FOTON实验室，博士
2010.09-2017.06,河北工业大学，材料科学与工程学院，学士与硕士
工作经历
2022.10-至今，天津理工大学，集成电路科学与工程学院，讲师
2021.07-2022.07，法国巴黎萨克雷大学，固体物理实验室，博士后助理研究员
研究方向
III-V/Si光电材料与器件
发表文章
[1] L. Chen, Y. Léger, G. Loget, et al., Epitaxial III-V/Si Vertical Heterostructures with Hybrid 2D-Semimetal/Semiconductor Ambipolar and Photoactive Properties, Advanced Science, 2022, 9(2): 2101661.
[2] L. Chen, O. Skibitzki, L. Pedesseau, et al., Strong Electron–Phonon Interaction in 2D Vertical Homovalent III–V Singularities, ACS Nano, 2020, 14(10): 13127-13136.
[3] L. Chen, L. Pedesseau, Y. Léger, et al., Antiphase boundaries in III-V semiconductors: Atomic configurations, band structures, and Fermi levels, Physical Review B, 2022, 106(16): 165310.
[4] L. Chen, M. Alqahtani, C. Levallois, et al., Assessment of GaPSb/Si tandem material association properties for photoelectrochemical cells, Solar Energy Materials and Solar Cells, 2021, 221: 110888.
[5] L. Chen*, Z. Chen, J. Zhao, et al., Strain-induced band-to-band Fermi level tuning in II-VI and III-V antiphase boundaries, Physical Review B, 2024, 109(8): 085404.
[6] I. Palacio, J. Guevara, L. Chen*, et al., Fermi surface of LaSb2 and direct observation of a CDW transition, Applied Surface Science, 2023, 610: 155477.
[7] L. Chen, B. Fan, W. Yan, et al., Photo-assisted splitting of dielectric microdroplets in a LN-based sandwich structure, Optics Letters, 2016, 19(41): 4558-4561.
[8] L. Chen, S. Li, B. Fan, et al., Dielectrophoretic behaviours of microdroplet sandwiched between LN substrates, Scientific Reports, 2016, 6(6): 29166.
[9] M. Alqahtani, S. Sath, L. Chen, et al., Photoelectrochemical water oxidation of GaPxSb1-x with a direct band gap of 1.65 eV for full spectrum solar energy harvesting, Sustainable Energy & Fuels, 2019, 3, 1720-1729.
[10] C. Cornet, S. Char, I. Lucci, L. Chen, et al., Zinc-blende group III-V/group IV epitaxy: Importance of the miscut, Phys. Rev. Materials, 2020, 4, 053401.
[11] M. Piriyev, G. Loget, Y. Leger, L. Chen, et al., Dual bandgap operation of a GaAs/Si photoelectrode, Sol. Energy Mater. Sol. Cells, 2023, 251, 112138.
[12] M. Piriyev, G. Loget, Y. Léger, L. Chen, et al., Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates, J. Mater. Chem. C, 2024,12, 1091-1097.
学术交流
[1] L. Chen, I. Palacio, J. Obando, et al., Electronic structures of III-V materials based on ARPES measurements and DFT calculations, Journées Nationales des Spectroscopies de PhotoEmission (JNSPE 2022), May 17-19, 2022, Dijon, France.
[2] L.Chen, M. Piriyev, A. Létoublon, et al., Performances of III-P/Si based photoelectrodes for solar hydrogen production, Journées Nationales du photovoltaïque 2020 (JNPV 2020), January 26-29, 2020, Dourdan, France.
[3] L. Chen, O. Skibitzki, Y. Léger, et. al., Strong electron-phonon coupling in 2D-vertical In-rich APB structures, journée nano-matériaux de Rennes, January 14, 2020, Rennes, France.
[4] L. Chen, G. Loget, R. Bernard, et al., GaPSb/Si tandem material with APBs for efficient overall water splitting, journée nano-matériaux de Rennes, January 14, 2020, Rennes, France.
[5] L. Chen, R. Piron, O. Skibitzki, et al., Electron-phonon interactions around antiphase boundaries in InGaP/SiGe/Si: structural and optical characterizations, 20th Anniversary of LPQM-Institut d'Alembert, ENS - Paris/Saclay, Cachan 2019, April 12, 2019, Paris, France.
[6] L. Chen, O. Skibitzki, Y. Léger, et. al., Photoluminescence of 2D-vertical In-rich APBs embedded in InGaP/SiGe/Si. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), September 02-07, 2018, Shanghai, China.
[7] L. Chen, O. Skibitzki, Y. Léger, et. al., Excitons bounded around In-rich antiphase boundaries. 34th International Conference on the Physics of Semiconductors (ICPS 2018), July 29 to August 3, 2018, Montpellier, France.
[8] L. Chen, O. Skibitzki, R. Piron, et. al., Antiphase boundaries in InGaP/SiGe/Si: structural and optical properties. European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), June 18-22, 2018, Strasbourg, France.
参与项目
1.国家公派博士留学基金项目（NO.2017-6254），“Epitaxial growth and optoelectronic properties of GaP-based III-V materials on Si substrate”, 2017-2021,主持.
2.法国巴黎萨克雷大学博士后基金项目（NO.16079-01），“Effect of surface defects on optoelectronic properties of III–V epitaxial multilayer stacks”, 2021-2022，主持.
3.法国国家自然科学基金项目（NO.ANR-21-CE09-0020），“Physical properties of hybrid semimetal/semiconductor III-V/Si materials”，2021-2025,主要参与人.
奖项和荣誉
1.硕士研究生国家奖学金;
2.河北省优秀硕士论文奖;
3.法国GDR优秀博士论文奖