教育背景
首尔国立大学（韩国），材料工程, 博士
高丽大学(韩国)，材料工程, 硕士
延边大学，材料与机械, 学士
工作经历
教授
2010.03至今, 天津理工大学, 集成电路科学与工程学院
助教
2010.01至2010.03, 首尔国立大学，材料学院
高级工程师
2006.03至2009.12, 三星电子半导体研究所
研究方向
先进半导体存储器、类脑芯片等（忆阻器材料与器件、宽禁带半导体材料与器件、紫外-近红外光电探测芯片）
发表文章
(1) Effect of trimethylgallium flow rate on structural and photoelectronic properties of β-Ga2O3 films prepared by MOVPE. Wei Mi, Bingkun Li, Rongrong Chen, Caina Luan, Di Wang, Lin'an He, Liwei Zhou and Jinshi Zhao*. Journal of Materials Science: Materials in Electronics. 2024.
(2) An artificial optoelectronic synapse based on MoOx film. Jinshi Zhao*, Shutong Zheng, Liwei Zhou, Wei Mi, Yue Ding and Meng Wang. Nanotechnology. 2023.
(3) Evaluating charge-type of polyelectrolyte as dielectric layer in memristor and synapse emulation. Jingzhou Shi, Shaohui Kang, Jiang Feng, Song Xue, Gangri Cai and Jinshi Zhao*.Nanoscale Horizons. 2023.
(4) Preparation and UV detection performance of Ti-doped Ga2O3/intrinsic-Ga2O3/p-Si PIN photodiodes. Wei Mi, Jinze Tang, Xinrong Chen, Xinwei Li, Bingkun Li, Liyuan Luo, Liwei Zhou, Rongrong Chen, Di Wang and Jinshi Zhao*. Journal of Materials Science: Materials in Electronics. 2023.
(5) Effects of seed layer thickness and post-annealing process on crystalline quality of β-Ga2O3 films prepared on Si (100) substrate by RF magnetron sputtering. Wei Mi, Xinwei Li, Yue Ding, Di Wang, Mingsheng Xu, Longfei Xiao, Xingcheng Zhang, Xinrong Chen, Bingkun Li, Liyuan Luo, Jinshi Zhao*, Liwei Zhou and Junli Yu. Vacuum. 2023.
(6) The effect of oxygen affinity electrode Ti on the performance of vanadium oxide-based valence change resistive random access memory. Wentao Li, Yibo Tuo, Wei Mi, Di Wang, Meng Wang, Liwei Zhou and Jinshi Zhao*. Vacuum. 2023.
(7) Molecular Structure Engineering of Polyelectrolyte Bilayer-Based Memristors: Implications for Linear Potentiation and Depression Characteristics. Shaohui Kang, Jingzhou Shi, Jiang Feng, Song Xue, Gangri Cai and Jinshi Zhao*. ACS Applied Nano Materials. 2023.
(8) Highly improved performance in Ta/MoO3/Pt structure by optimizing molybdenum oxide sputtering process for resistive switching memory. Jinshi Zhao*, Guojing Li, Yuxiang Cao, Wei Mi and Liwei Zhou. Materials Science in Semiconductor Processing. 2022.
(9) The optimization and role of Ti surface doping in thermochromic VO2 film. Jinshi Zhao*, Danke Chen, Chenyang Hao, Wei Mi and Liwei Zhou. Optical Materials. 2022.
(10) Polyelectrolyte Bilayer-Based Transparent and Flexible Memristor for Emulating Synapses. Jiuzhou Ren, Hui Liang, Jiacheng Li, Ying Chen Li, Wei Mi, Liwei Zhou, Zhe Sun, Song Xue, Gangri Cai and Jinshi Zhao*. ACS Applied Materials & Interfaces. 2022.
(11) Effect of oxygen flow ratio on crystallization and structural characteristics of gallium oxide thin films. Meng Li, Wei Mi, Liwei Zhou, Jinshi Zhao*, Xinrong Chen, Jinze Tang, Xinwei Li, Guang Zhang, Kailiang Zhang, Chongbiao Luan, Xingcheng Zhang and Mingsheng Xu. Ceramics International. 2022.
(12) The improvement of bilayer VO2/TaOx thermochromic properties for smart window. Danke Chen, Maoze Yu, Chenyang Hao, Wei Mi, Meng Wang, Liwei Zhou and Jinshi Zhao*. Journal of Materials Science: Materials in Electronics. 2022.
(13) Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory. Jinshi Zhao*, Yingchen Li, Jiacheng Li and Liwei Zhou. Vacuum. 2021.
(14) Low pressure thermal annealed fabrication of VO2 on glass with excellent optical properties. Jinshi Zhao*, Jiacheng Li, Chenyang Hao, Qiuyang Li, Wei Mi, Xiaoyong Qiang and Liwei Zhou. Materials Science in Semiconductor Processing. 2021.
(15) Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption. Jinshi Zhao*, Shuqin Guo, Jiacheng Li, Yingchen Li and Liwei Zhou. Applied Physics Letters. 2021.
(16) Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics.Yu Yan, Jiacheng Li, Yuting Chen, Xiangyu Wang, Gangri Cai, Hyeon Woo Park, Ji Hun Kim, Jinshi Zhao* and Cheol Seong Hwang. ACS Applied Materials & Interfaces. 2021.
(17) Flexible Ta/TiOx/TaOx/Ru memristive synaptic devices on polyimide substrates. Jiacheng Li, Chenyang Hao, Shuqin Guo, Yingchen Li, Jiuzhou Ren, Liwei Zhou and Jinshi Zhao*Nanotechnology. 2021.
(18) The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory.Jinshi Zhao*, Chen Wang, Yu Yan, Yuting Chen, Wentao Sun, Junye Li, Xiangyu Wang, Wei Mi, Dian You Song and Liwei Zhou. Vacuum. 2020.
(19) Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film. Yuting Chen, Yu Yan, Jianwen Wu, Chen Wang, Jun Ye Lin, Jinshi Zhao* and Cheol Seong Hwang. Acs Applied Materials & Interfaces. 2020.
(20) Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure. Jinshi Zhao*, Ming Zhang, Shangfei Wan, Zhengchun Yang and Cheol Seong Hwang. ACS Applied Materials & Interfaces. 2018.
(21) Fabrication of Nickel/Multi-Layer Graphene/Manganese Dioxide Hybrid Film as Enhanced Micro-Supercapacitor Devices. Zhengchun Yang, WenLiang Zhao, JianYun Wang, Ran Chen, Xuan Li, Tao Xue, KaiLiang Zhang and Jinshi Zhao*. Science of Advanced Materials. 2018.
(22) Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory. Yichuan Wang, Yu Yan, Chen Wang, Yuting Chen, Junye Li, Jinshi Zhao* and Cheol Seong Hwang. Applied Physics Letters. 2018.
(23) Impact of potential barrier on electronic resistive switching performance based on Al/TiOx/Al structure. Shangfei Wan, Yu Yan, Chen Wang, Zhengchun Yang and Jinshi Zhao*. Vacuum. 2018.
(24) Design and fabrication of flexible supercapacitor devices by using mesoporous carbon/polyaniline ink. Wenliang Zhao, Ming Zhang, Peng Pan, Dianyou Song, Shengming Huang, Jun Wei, Xuan Li, Wen Qi, Kailiang Zhang, Jinshi Zhao* and Zhengchun Yang. Surface & Coating Technology. 2017.
(25) Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory. Xiang Yuan Li, Xing Long Shao, Yi Chuan Wang, Hao Jiang, Cheol Seong Hwang and Jinshi Zhao*. Nanoscale. 2017.
(26) Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures. Hao Jiang, Xiang Yuan Li, Ran Chen, Xing Long Shao, Jung Ho Yoon, Xiwen Hu, Cheol Seong Hwang and Jinshi Zhao*. Scientific Reports. 2016.
(27) Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure. Liwei Zhou, Xinglong Shao, Xiangyuan Li, Hao Jiang, Ran Chen, Kyung Jean Yoon, Hae Jin Kim, Kailiang Zhang, Jinshi Zhao* and Cheol Seong Hwang. Applied Physics Letters. 2015.
(28) Electroforming-Free and Multilevel Resistance Switching Properties in Al/TiOx/Cu Structure.Xinglong Shao, Liwei Zhou, Kyung Jean Yoon, Hao Jiang, Jinshi Zhao*, Kailiang Zhang, Sijung Yoo and Cheol Seong Hwang. ECS Solid State Letters. 2015.
(29) Electronic resistance switching in the Al/TiOx/Al structure for forming-free and area-scalable memory. Xinglong Shao, Liwei Zhou, Kyung Jean Yoon, Hao Jiang, Jinshi Zhao*, Kailiang Zhang, Sijung Yoo and Cheol Seong Hwang. Nanoscale. 2015.
(30) Two-Step Reset in the Resistance Switching of the Al/TiOx/Cu Structure. Xinglong Shao, Jinshi Zhao*, Kailiang Zhang, Ran Chen, Kuo Sun, Changjiang Chen, Kai Liu, Liwei Zhou, Jianyun Wang, Chenming Ma, Kyung Jean Yoon and Cheol Seong Hwang*. Acs Applied Materials & Interfaces. 2013.
参与项目
专利
(1) Jin Shi Zhao; Jang Eun Lee; In Gyu Baek; Se Chung Oh; Kyung Tae Nam; Eun Kyung Yim ;Semiconductor Devices Having Resistive Memory Element, 2008-9-4, 美国, US7838863B2.
(2) Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Semiconductor Memory Device, 2010-6-24, 美国, US8581346B2.
(3) Hong SiK Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Nonvlatile Memory Device, 2010-4-22, 美国, US8331152B2.
(4) Hong Sik Yoon; Jin Shi Zhao; In Gyu Baek; Hyun Jun Sim; Min Young Park ; Semiconductor Memory Device, 2012-9-11, 美国, US8264018B2.
(5) Jin Shi Zhao; Jang Eun Lee ; Bipolar Switching Type Nonvolatile Memory Device Having Tunneling Layer, 2008-2-26, 韩国, KR100809724.
(6) 赵金石; 邵兴隆 ; 一种自发生长金属纳米晶颗粒的P／N 型叠层阻变存储器, 2014-10-15, 中国,201210410617.1.
(7) 赵金石; 邵兴隆; 马辰铭; 周立伟; 陈长军 ; 一种多阻态阻变存储器, 2015-4-8, 中国,201310078256.X.
(8) 赵金石; 张楷亮 ; 一种利用碳纳米管作为固态电解的阻变存储器, 2015-4-15, 中国,201010593266.3.
(9) 张楷亮；张宏智；王芳；鉴肖川；赵金石；程文可；一种基于氧化铪/氧化钛叠层结构的低功耗阻变存储器，2015-7-22，中国，201510183916.X