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研究进展 | Dopants in short-channel 2D transistors
发布时间:2024-08-09

Congrats to Yue and Chenyu for their co-first aunthored paper "Dopant-Mediated Carrier Tunneling in Short-Channel Two-Dimensional Transistors" being published in Materials Chemistry Frontiers! This paper was contributed to a themed collection that celebrates the 10th anniversary of ShanghaiTech University.

In this work, using ab initio calculation and quantum transport simulation, we atempted to uncover the electronic functionalities of single-atom dopants in short-channel 2D transistors, which, dependent on the channel length, can serve as either a "relay station" to facilitate carrier tunneling or a scattering center that reduces source-drain currents.