研究进展 | Tunable quantum well states in GaTe atomic layers
发布时间:2024-07-30
Congrats to Yue for his co-first authored paper "Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries" being published in ACS Nano!
We colloborated with Prof. Yanfeng Zhang from Peking University in understanding, from a theoretical perspective, the engineered quantum well states of GaTe by layer thickness and mirror twin boundaries (MTBs). We anticipated that such MTBs could be utilized for constructing ultrascaled electonics, which has lately been demonstrated elsewhere.