已毕业，现就职南京国科半导体有限公司。

研究方向：

·GaAs & GaN基半导体薄膜结构调控与光电性能研究

[2]  X. Hao*, L. Li, Q. Kong, S. Ma*, J. Wang, Y. Xu, X. Liu, B. Han, B. Qiu, B. Xu*. Atomic-scale insights of the effect of growth temperature on the migration behavior of Al atoms in InGaAs/AlGaAs multiple quantum wells, Materials Science in Semiconductor Processing, 2023, 154, 107197. https://doi.org/10.1016/j.mssp.2022.107197.

[1]   S. Ma*, L. Li, Q. Kong, Y. Xu, Q. M. Liu, S. Zhang, X. S. Zhang, B. Han, B. C. Qiu, B. S. Xu*, X. D. Hao*, Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells. Chinese Physics B, 2022, https://doi.org/10.1088/1674-1056/ac70b5.