许磊 - 华北水利水电大学 - 物理与电子学院

个人简介

许磊，河南省教育厅学术技术带头人，河南省高校青年骨干教师。主持国家自然科学基金面上项目等，在ACS Applied Materials & Interfaces、IEEEElectron Device Letters、Applied Physics Letters、IEEE Transactions on Electron Devices等权威期刊上发表SCI文章20余篇，获得发明专利2项。个人学习经历 1996-2000年，河南大学物理学专业，理学学士学位 2004-2006年，武汉大学微电子学与固体电子学专业，工学硕士学位 2009-2015年，武汉大学微电子学与固体电子学专业，工学博士学位承担的教学任务主讲电子材料与元器件等课程。承担的科研项目 1. 金属元素与氢共掺杂下氧化锌薄膜缺陷调控研究及器件研制（基金号11574083），国家自然科学基金面上项目，主持。 2、B位离子对二维三角磁铁多铁性调控与机制研究（基金号U1804125）,国家自然科学基金联合项目，参与。 3. 高性能不含铟的非晶ZnSnO基薄膜晶体管研制（2015GGJS-103），河南省高校青年骨干教师资助计划项目，主持。

研究领域

薄膜电子器件及光电探测应用

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1. Abliz,A.; Xu, L.; Wan, D.; Duan, H.; Wang, J.; Wang, C.; Luo, S.; Liu, C., Effects ofyttrium doping on the electrical performances and stability of ZnO thin-filmtransistors. Applied Surface Science 2019, 475, 565-570. 2. Abliz,A.; Wan, D.; Yang, L.; Mamat, M.; Chen, H.; Xu, L.; Wang, C.; Duan, H.,Investigation on the electrical performances and stability of W-doped ZnOthin-film transistors. Materials Science in Semiconductor Processing 2019, 95,54-58. 3. Li,G.; Abliz, A.; Xu, L.; Andre, N.; Liu, X.; Zeng, Y.; Flandre, D.; Liao, L.,Understanding hydrogen and nitrogen doping on active defects in amorphousIn-Ga-Zn-O thin film transistors. Applied Physics Letters 2018, 112 (25). 4. Abliz,A.; Wan, D.; Chen, J.-Y.; Xu, L.; He, J.; Yang, Y.; Duan, H.; Liu, C.; Jiang,C.; Chen, H.; Guo, T.; Liao, L., Enhanced Reliability of In-Ga-ZnO Thin-FilmTransistors Through Design of Dual Passivation Layers. IEEE Transactions onElectron Devices 2018, 65 (7), 2844-2849. 5. Abliz,A.; Gao, Q.; Wan, D.; Liu, X.; Xu, L.; Liu, C.; Jiang, C.; Li, X.; Chen, H.;Guo, T.; Li, J.; Liao, L., Effects of Nitrogen and Hydrogen Codoping on theElectrical Performance and Reliability of InGaZnO Thin -Film Transistors. AcsApplied Materials & Interfaces 2017, 9 (12), 10798-10804. 6. Xu,L.; Chen, Q.; Liao, L.; Liu, X.; Chang, T.-C.; Chang, K.-C.; Tsai, T.-M.;Jiang, C.; Wang, J.; Li, J., Rational Hydrogenation for Enhanced Mobility andHigh Reliability on ZnO-based Thin Film Transistors: From Simulation toExperiment. Acs Applied Materials & Interfaces 2016, 8 (8), 5408-5415. 7. Wan,D.; Liu, X.; Xu, L.; Liu, C.; Xiao, X.; Guo, S.; Liao, L., The Study forSolution-Processed Alkali Metal-Doped Indium-Zinc Oxide Thin-Film Transistors. IEEEElectron Device Letters 2016, 37 (1), 50-52. 8. Abliz,A.; Wang, J.; Xu, L.; Wan, D.; Liao, L.; Ye, C.; Liu, C.; Jiang, C.; Chen, H.;Guo, T., Boost up the electrical performance of InGaZnO thin film transistorsby inserting an ultrathin InGaZnO:H layer. Applied Physics Letters 2016, 108(21). 9. Abliz,A.; Huang, C.-W.; Wang, J.; Xu, L.; Liao, L.; Xiao, X.; Wu, W.-W.; Fan, Z.;Jiang, C.; Li, J.; Guo, S.; Liu, C.; Guo, T., Rational Design of ZnO:H/ZnOBilayer Structure for High-Performance Thin-Film Transistors. Acs AppliedMaterials & Interfaces 2016, 8 (12), 7862-7868. 10. Zhang,Z.; Zou, X.; Xu, L.; Liao, L.; Liu, W.; Ho, J.; Xiao, X.; Jiang, C.; Li, J.,Hydrogen gas sensor based on metal oxide nanoparticles decorated graphenetransistor. Nanoscale 2015, 7 (22), 10078-10084. 11. Xu,L.; Huang, C.-W.; Abliz, A.; Hua, Y.; Liao, L.; Wu, W.-W.; Xiao, X.; Jiang, C.;Liu, W.; Li, J., The different roles of contact materials between oxidationinterlayer and doping effect for high performance ZnO thin film transistors. Applied Physics Letters 2015, 106 (5). 12. Wang,J.; Zou, X.; Xiao, X.; Xu, L.; Wang, C.; Jiang, C.; Ho, J. C.; Wang, T.; Li,J.; Liao, L., Floating Gate Memory-based Monolayer MoS2 Transistor with MetalNanocrystals Embedded in the Gate Dielectrics. Small 2015, 11 (2), 208-213. 13. Li,Z.; Xu, L.; Abliz, A.; Hua, Y.; Li, J.; Shi, Y.; Liu, W.; Liao, L., ElectricalProperties in Group IV Elements-Doped ZnO Thin-Film Transistors. Journal ofDisplay Technology 2015, 11 (8), 670-673. 14. Xu,L.; Li, Z.; Liu, X.; Wang, J.; Xiao, X.; Jiang, C.; Liu, Y.; Chen, W.; Li, J.;Liao, L., Tunable Electrical Properties in High-Valent Transition-Metal-DopedZnO Thin-Film Transistors. IEEE Electron Device Letters 2014, 35 (7), 759-761.