刘波 - 苏州科技大学 - 化学生物与材料工程学院

个人简介

刘波，国家纳米重大科学研究计划（973）项目“相变存储器规模制造技术关键基础问题研究”（2010CB934300）首席科学家，中国科学院上海微系统与信息技术研究所兼职研究员、博士研究生导师，齐鲁工业大学客座教授，“九三学社”社员。入选国家重点研发计划重点专项评审（“纳米科技”领域）核心专家库。2005和2009年先后被评为副研究员和研究员。负责人过国家纳米重大科学研究计划（973）项目、国家863计划重点项目子课题、国家863计划目标导向类项目等科研项目13项，参加过国家集成电路重大专项、国家纳米重大科学研究计划、国家863、国家973等科研项目24项。在国内首次研究了硫系化合物相变薄膜的激光致相变特性，系统研究了高密度可擦重写相变光盘的制备工艺，在我国率先开展相变存储器（PCRAM）的研究工作，在新型相变材料、电极材料、器件单项工艺开发及其集成方面获得多项国内领先的科研成果，研制出的4Kb打印机用PCRAM芯片产品已获得1600万颗试用订单。已在ACS AMI、Carbon、APL、IEEE EDL等期刊发表论文290篇（SCI论文205篇），论文被引用2425次，H因子为25。申请发明专利127项（其中授权中国发明专利115项，授权美国发明专利5项）。参与了《Data Storage at the Nanoscale: Advances and Applications》、《中国材料工程大典》、《光子学技术与应用》、《相变存储器》和《大辞海》等五部著作的编写工作。指导研究生22名（博士16名、硕士6名）。先后荣获中国电子学会技术发明三等奖（排名第三）、中国科学院青年创新促进会会员、首届中国科学院卢嘉锡青年人才奖、上海市青年科技启明星跟踪、上海市青年科技启明星等多项奖励，入选上海市青年科技启明星二十周年典型宣传案例画册（1419名启明星中选拔30人）和中国博士后30年-上海市优秀博士后代表宣传画册。中国物理学会固体缺陷专业委员会常务会员。作为大会秘书长，组织过三次国际存储学术会议。

研究领域

纳米光电材料与器件：（1）半导体存储器材料与器件；（2）柔性电子材料与器件；（3）能量转换和存储材料与器件；(4)水质监测传感器。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Heng Wang, Yan Liu, Bo Liu*, Dan Gao, Zhen Xu, Yipeng Zhan, Zhitang Song, Songlin Feng. Nanoscale cross-point diode array accessing embedded high density PCM, Semiconductor Science and Technology, 2017, 32(8): 085009 Heng Wang, Bo Liu*, Yan Liu, Chao Zhang, Yipeng Zhan, Zhen Xu, Dan Gao, Zhitang Song, Songlin Feng. Investigation on scalability of dual trench epitaxial diode for phase change memory, Solid-State Electronics, 2017, 132: 99-102 Qing Wang, Minghui Jiang, Bo Liu*, Yang Wang*, Yonghui Zheng, Sannian Song, Yiqun Wu, Zhitang Song, Songlin Feng. Reversible phase change characteristics of Cr-doped Sb2Te3 films with different initial states induced by femtosecond pulses, ACS Applied Materials & Interfaces, 2016, 8(32): 20885-20893 Sai Sun, Xiaodong Zhuang, Bo Liu*, Luxing Wang, Linfeng Gu, Sannian Song, Bin Zhang, Yu Chen*. In-situ synthesis and characterization of poly(aryleneethynylene) - grafted reduced graphene oxide, Chem. Eur. J., 2016, 22(7): 2247-2252 Dan Gao, Bo Liu*, Zhen Xu, Ying Li, Lei Wang, Zhitang Song, Nanfei Zhu, Jiadong Ren, Yipeng Zhan, Songlin Feng. Failure analysis of nitrogen-doped Ge2Sb2Te5 phase change memory, IEEE Transactions on Device and Materials Reliability, 2016, 16(1): 74-79 Yangyang Xia, Bo Liu*, Qing Wang, Zhonghua Zhang, Shasha Li, Yonghui Zheng, Le Li, Sannian Song, Weijun Yin, Dongning Yao, Zhitang Song, Songlin Feng. Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory, Microelectronic Engineering, 2016, 161: 69-73 Qing Wang, Bo Liu*, Yangyang Xia, Yonghui Zheng, Ruru Huo, Qi Zhang, Sannian Song, Yan Cheng, Zhitang Song, Songlin Feng. Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory, Appl. Phys. Lett., 2015, 107(22): 222101 Qing Wang, Bo Liu*, Yangyang Xia, Yonghui Zheng, Ruru Huo, Min Zhu, Sannian Song, Shilong Lv, Yan Cheng, Zhitang Song, Songlin Feng. Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory, Physica Status Solidi (RRL) - Rapid Research Letters, 2015, 9(8): 470-474 Zhen Xu, Bo Liu*, Yifeng Chen, Dan Gao, Heng Wang, Yangyang Xia, Zhitang Song, Changzhou Wang, Nanfei Zhu, Jiadong Ren, and Yipeng Zhan. The suppressing of density change in nitrogen doped Ge2Sb2Te5 for high performance phase change memory, ECS Solid State Letters, 2015, 4(12): P105-P108 Qing Wang, Bo Liu*, Yangyang Xia, Zhonghua Zhang, Yun Meng, Sannian Song, Zhitang Song, Wei Xi, Dongning Yao, Shilong Lv, Songlin Feng. CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance, J. Materials Science: Materials in Electronics, 2015, 26(6): 4138-4143 Yan Liu, Chao Zhang, Zhitang Song, Bo Liu*, Guanping Wu, Jia Xu, Lianhong Wang, Lei Wang, Zuoya Yang and Songlin Feng. Cost-effective schottky-barrier diode array with Ni-silicidation accessing low power phase-change memory, IEEE Transactions on Electron Devices, 2014, 61(3): 682-687 Ying Li, Zhitang Song, Bo Liu*, Guanping Wu, and Songlin Feng. Study and improvement on tungsten plug corrosion in CMP process for PCRAM, IEEE Transactions on Semiconductor Manufacturing, 2014, 27(1): 38-42 W. C. Ren, B. Liu*, Z. T. Song, X. Z. Jing, B. C. Zhang, Y. H. Xiang, H. B. Xiao, J. Xu, et al. Nano-scale gap filling for phase change material by pulsed deposition and inductively coupled plasma etching, Applied Physics A: Materials Science & Processing, 2013, 112(4): 999-1002 Chao Zhang, Guan-Ping Wu, Zhi-Tang Song, Bo Liu*, Lian-Hong Wang, Yan Liu, Zuoya Yang, and Songlin Feng. Application of three-step epitaxial process to dual trench epitaxial diode array, J. Nanoscience and Nanotechnology, 2013, 13(2): 1186-1189 Yan Liu, Zhitang Song, Bo Liu*, Guanping Wu, Houpeng Chen, Chao Zhang, Lianhong Wang, and Songlin Feng. Optimization of 40nm node epitaxial diode array for phase-change memory application, IEEE Electron Device Letters, 2012, 33(8): 1192-1194 Yan Liu, Zhitang Song, Bo Liu*, Jia Xu, Houpeng Chen, Chao Zhang, Guanping Wu and Songlin Feng. Design of side bottom-electrode-contact for high density phase-change memory array, J. Nanoscience and Nanotechnology, 2012, 12(10): 7939-7943 Jie Shen, Bo Liu*, Zhitang Song, Cheng Xu, Feng Rao, Shuang Liang, Songlin Feng, and Bomy Chen. Germanium nitride interfacial layer for chalcogenide random access memory applications, Appl. Phys. Express, 2008, 1: 011201 Jialin Yu, Bo Liu, Ting Zhang, Zhitang Song, Songlin Feng, and Bomy Chen. Properties of Ge-doped Sb2Te3 phase-change thin film, Appl. Surf. Sci., 2007, 253(14): 6125-6129 Bo Liu*, Zhitang Song, Songlin Feng, and Bomy Chen. Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material, Microelectronic Engineering, 2005, 82(2): 168-174 Bo Liu*, Zhitang Song, Ting Zhang, Jilin Xia, Songlin Feng, and Bomy Chen. Effect of N-implantation on the structural and electrical characteristics of Ge2Sb2Te5 phase change film, Thin Solid Films, 2005, 478(1-2): 49-55