杨国锋 - 江南大学

个人简介

江南大学理学院光电信息科学与工程系教师，南京大学电子科学与工程学院博士后。美国光学学会、中国光学学会和江苏省光学学会会员。长期从事III-V族宽禁带半导体和二维半导体材料和光电器件及传感系统的研究工作，已在国际SCI学术刊物上发表学术论文80余篇。申请发明专利10项，授权1项。主持国家自然科学基金2项，江苏省自然科学基金青年基金1项，主持中国博士后和江苏省博士后基金3项，无锡市科技发展基金2项，主持中央高校基本科研业务费重点专项项目2项，企业横向项目6项，累计主持科研经费300余万元。参与完成国家973、863、自然科学基金和江苏省自然科学基金等多项重点项目课题。获中国轻工业联合会和中国商业联合会科技进步奖各1项，获2016年“中国光学重要进展”和“江苏青年光学科技奖”。工作及研究经历 2013.06-至今，江南大学理学院光电信息科学与工程系副教授； 2008.09-2013.06，南京大学电子科学与工程学院，微电子学与固体电子学工学博士学位； 2004.09-2008.06 南京航空航天大学，应用化学学士。

研究领域

III-V族半导体材料和二维材料生长，半导体光电和电子器件设计，半导体光电器件制备，半导体光电探测和传感系统设计

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] Jin Wang, Yang Guofeng*, Rui Sun, et al., A study on the electronic and interfacial structures of monolayer ReS2-metal contacts, Phys. Chem. Chem. Phys., 2017, 19, 27052-27052. [2] Chujun Yao, Yang Guofeng*, Rui Sun, et al., High-performance AlGaN-based solar-blind avalanche photodiodes with dual-periodic III-nitride distributed Bragg reflectors, Applied Physics Express, 2017, 10, 034302. [3] Yang Guofeng*, Qing Zhang, Jin Wang, et al., InGaN/GaN multiple quantum wells on selectively grown GaN microfacets and the applications for phosphor-free white light-emitting diodes, Review in Physics, 2016, 1, 101-119. [4] Yang Guofeng*, Chen Peng, Shumei Gao, et al., White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy, Photonics Research, 2016, 4, 17-20. [5] Yang Guofeng*, Qing Zhang, Jin Wang, et al., Analysis of 270/290/330-nm AlGaN-based deep ultraviolet light-emitting diodes with different Al content in quantum wells and barriers, IEEE Photonics Journal, 2015, 7, 2200707. [6] Yan Dawei, Ren Jian, Yang Guofeng, et al., Surface acceptor-like trap model for gate leakage current degradation in lattice-matched InAlN/GaN HEMTs, IEEE Electron Device Letters, 2015, 36, 1281-1283. [7] Yang Guofeng*, Xie Feng, Chen Peng, et al., Formation of nanorod InGaN/GaN multiple quantum wells using nikel nano-masks and dry etching for InGaN-based light-emitting diodes, Material Science in Semiconductor Processing, 2015, 30, 694-706. [8] Wu Zhenlong, Chen Peng, Yang Guofeng*, et al., Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy, Applied Surface Science, 2015, 331, 444-448. [9] Li Yuejing, Tong Yuying, Yang Guofeng*, et al., Selective area epitaxy of monolithic white-light InGaN/GaN quantum well microstripes with dual color emission, Journal of Vacuum Science &Technology A, 2015, 33, 05E102. [10] Yang Guofeng*, Chen Peng, Liu Bin, et al., Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells, Physica E, 2014,62, 55-58. [11] Yang Guofeng*, Li Guohua, Gao Shumei, et al., Characteristics of N-face InGaN light-emitting diodes with p-type InGaN/GaN superlattice, IEEE Photonics Technology Letter, 2013, 25, 2369-2372. [12] Yang Guofeng*, Guo Ying, Zhu Huaxin, et al., Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks, Applied Surface Science, 2013,285, 772-777