个人简介
教育经历
博士研究生（在职）,2004.01-2009.10,光电子,（芬兰）坦佩雷理工大学,工学博士,2009.11,光电子,（芬兰）坦佩雷理工大学
博士研究生,1993.09-1998.06,凝聚态物理,中科院物理所,理学博士,1998.08,凝聚态物理,中科院物理所
大学本科,1985.09-1990.06,物理学,武汉大学,理学学士,1990.06,物理学,武汉大学
工作经历
2018.06-2019.05,（英国）贝德福特大学,纳米制造领域的研究与国际合作,教授（兼职）
2019.02-,苏州大学,光电学院公共平台主管,公共平台主任
2014.09-,苏州大学,敬文书院学业导师,教授
2009.10-,苏州大学,组建量子点和纳米仿生研究室,特聘教授
2004.01-2009.04,（芬兰）Epicrystals有限公司,领导RGB半导体激光器投影仪的研发,合伙人和高级研发工程师
2001.02-2009.12,（芬兰）坦佩雷理工大学,III-V族分子束外延、半导体激光器,资深研究员
2000.07-2005.05,中科院物理所,SiGe/Si分子束外延,副研究员（破格晋升）
1998.07-2000.06,中科院物理所,SiGe/Si分子束外延,助理研究员
1999.12-2000.02,（日本筑波）电子综合研究所,半导体太阳能电池,STA Research Fellow
1990.07-1993.08,（中日合资）青岛新和文具有限公司,弹簧钢文具制备,技术部助理、总经理秘书、质检经理
近期论文
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Nano Fabrication by Laser Interference, C.S. Peng, C. Tan, W. Zhang, X.-Y. Gu, and W.-P. Liu, International Journal of Nanomanufacturing. 8 (3), pp. 212-220, (2012)
Mechanism of Photoluminescence Blue Shift in InGaAsN/GaAs Quantum Wells during Annealing, C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, J. Gryst Growth, 278, pp.259-263 (2005)
Wet oxidation for detecting surface defect pits of AlGaAs related semiconductors, C.S. Peng, J. Konttinen, T. Jouhti, H.F. Liu, M. Pessa, J. Gryst Growth 274, pp. 138-143 (2005)
High-performance singlemode InGaNAs/GaAs laser, C.S. Peng, N. Laine, J.Konttinen, S.Karirinne, T.Jouhti, M.Pessa, IEE Electronics. Lett. 40 (10), pp. 604-605 (2004)
InGaAsN/GaAs lasers Performance on Thermal Annealing, C.S. Peng, H.F. Liu, J. Konttinen, S. Karirinne, T.Jouhti, M. Pessa, Physica Scripta, T114, pp. 159-160 (2004)
A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells, C.S. Peng, W. Li, T. Jouhti, E.-M. Pavelescu, M. Pessa, J. Cryst. Growth 251, pp. 378-382 (2003)
Diffusion at the interfaces of InGaNAs/GaAs quantum wells, C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Solid State Electronics 47/3 pp. 431-435 (2003)
A new method to suppress the In diffusion of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy, C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Thin Solid Films 428 pp.176-180 (2003)
Suppression of interfacial atomic interdiffusion in GaInNAs/GaAs heterostructures grown by molecular beam epitaxy, C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Appl. Phys. Lett. 80 (25) pp. 4720-4722 (2002)
1.32-um GaInNAs / GaAs Laser With a Low Thereshold Current Density, C.S. Peng, T. Jouhti, P. Laukkanen, E.-M. Pavelescu, J. Konttinen, W. Li, M. Pessa, IEEE Photon.Tech. Lett., 14 (3), pp. 275-277 (2002)
Study of Ge0.96Si0.04 epilayers grown on Si (001)at high temperature, C.S. Peng, H.Kawanami, Y.K.Li, G.H.Li, Q.Huang, and J.M.Zhou, J. Crystal Growth 227/228 pp. 786-790 (2001)
The formation of dislocations in the interface of GeSi/low-temperature Si buffer grown on Si (001), C.S. Peng, Y.K.Li, Q.Huang, and J.M.Zhou J. Crystal Growth 227/228 pp. 740-743 (2001)
Relaxed GeSi alloy grown on low-temperature buffers by MBE, Chang-si Peng, Qi Huang, Junming Zhou, Yi H Zhang, CH Tung, TT Sheng, Jian Wang, Silicon-based Optoelectronics, 3630, pp. 231-237 (1999.3.19)
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers, C.S. Peng, H.Chen, Z.Y.Zhao, J.H.Li, D.Y.Dai, Q.Huang, J.M.Zhou, Y.H.Zhang, C.H.Tung, T.T.Sheng, J.Wang, J. Crystal Growth 201/202 pp. 530-533 (1999)
New optical properties of Ge self-organized quantum dots, C.S. Peng, Q.Huang, Y.H.Zhang, W.Q.Cheng, T.T.Sheng, C.H.Tung and J.M.Zhou, Thin Solid Films 323 pp. 174-177 (1998)
Optical properties of Ge self-organized quantum dots in Si, C.S. Peng, Q.Huang, W.Q.Cheng, J.M.Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung, Phys. Rev. B 57 pp. 8805-8808 (1998)
Improvement of Ge self-organized quantum dots by use of Sb surfactant, C.S. Peng, Q.Huang, W.Q.Cheng, J.M.Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung, Appl. Phys. Lett. 72 pp. 2541-2543 (1998)
GaAs-based InGaAsN Lasers, Changsi Peng, Tomi Jouhti, Janne Konttinen, Markus Pessa, Bulletin of the American Physical Society (American Physical Society), 2005/3/22.
Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer, L Yang, X Yang, L Miao, W Zhang, D Huo, Z Shi, C Peng, Optoelectronic Devices and Integration VII 10814, 108141M (2018.11.05)
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