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1. Na Bai, Min Xu, Cong Hu, Yaodong Ma, Qi Wang, Deyan He, Jing Qi*, Yingtao Li*, Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device, J. Materials Science in Semiconductor Processing, 91, 246-251 (2019). 2. Yulan Lu, Lijun Su, Jing Qi*, Shulai Lei*, Bao Liu, Qi Zang, Siqi Shi, and Xingbin Yan, A combined DFT and experimental study on the nucleation mechanism of NiO nanodots on grapheme, J. Mater. Chem. A, 6, 13717 (2018). 3. Min Xu, Na Bai, Hong-Xia Li, Cong Hu, Jing Qi*, Xing-Bin Yan*, Synthesis of MXene-supported layered MoS2 with Enhanced Electrochemical Performance for Mg batteries, Chinese Chemical Letters, 29, 1313-1316 (2018). 4. Min Xu, Shulai Lei, Jing Qi, Qingyun Dou, Lingyang Liu, Yulan Lu, Qing Huang, Siqi Shi, and Xingbin Yan*, Opening Magnesium Storage Capability of Two-Dimensional MXene by Intercalation of Cationic Surfactant, ACS Nano, 12 (4), pp 3733–3740 (2018). 5. Cong Hu, Qi Wang, Shuai Bai, Min Xu, Deyan He, Deyuan Lyu, and Jing Qi*, The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory, Applied Physics Letters, 110, 073501 (2017). 6. Bosen Zhang, Cong Hu, Tianshuang Ren, Bo Wang, Jing Qi*, Qing Zhang, Jian- Guo Zheng, Yan Xin, and Jianlin Liu, Metal/ZnO/MgO/Si/Metal Write-Once-Read- Many-Times Memory, IEEE Transactions On Electron Devices, 63, 3508-3513 (2016). 7. Si Chen, Jiangtao Chen, Jianlin Liu, Jing Qi*, Yuhua Wang*, Enhanced field emission from ZnO nanowire arrays utilizing MgO buffer between seed layer and silicon substrate, Applied Surface Science, 387, 103-108 (2016). 8. Bo Wang, Tianshuang Ren, Si Chen, Bosen Zhang, Rongfang Zhang, Jing Qi*, Sheng Chu, Jian Huang and Jianlin Liu*, Resistive switching in Ga- and Sb-doped ZnO single nanowire devices, Journal of Materials Chemistry C, 3, 11881-11885 (2015). 9. Si Chen, Jiangtao Chen, Jianlin Liu, Jing Qi*, Yuhua Wang*, The effect of high-temperature oxygen annealing on field emission from ZnO nanowire arrays, Applied Surface Science, 357, 413-416 (2015). 10. Rongfang Zhang, You Li, Jing Qi* and Daqiang Gao*, Ferromagnetism in ultrathin MoS2 nanosheets: from amorphous to crystalline, Nanoscale Research Letters, 9, 586 (2014). 11. Mei Long, Haolei Zhou, Daqiang Gao, Cangji Wu, Meng Gao, Jiafeng Shao, Jing Qi*, Room temperature ferromagnetism in Zn0.99La0.01O and pure ZnO nanoparticles, Materials Chemistry and Physics, 145, 510-514 (2014). 12. Jian Huang, Jing Qi, Zonglin Li, Jianlin Liu*, Vertically aligned nanostructures based on Na-doped ZnO nanorods for wide band gap semiconductor memory applications, Nanotechnology, 24, 395203 (2013). 13. Jing Qi*, Mario Olmedo, Jian-Guo Zheng, Jianlin Liu*, Multimode Resistive Switching in Single ZnO Nanoisland System, Scientific Reports, 3, 2405 (2013). 14. Jing Qi*, Jian Huang, Dennis Paul, Jingjian Ren, Sheng Chu, Jianlin Liu*, Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires, Nanoscale, 5, 2651-2654 (2013). 15. Jing Qi*, Qing Zhang, Jianlin Liu, The effect of top contact on ZnO write-once–read-many-times memory, Physica Status Solidi-Rapid Research Letters, 6, 478–480 (2012). 16. Jing Qi*, Mario Olmedo, Jingjian Ren, Ning Zhan, Jianze Zhao, Jian-Guo Zheng, Jianlin Liu*, Resistive Switching in Single Epitaxial ZnO Nanoislands, ACS Nano, 6, 1051-1058 (2012). 17. Jing Qi, Jingjian Ren, Mario Olmedo, Ning Zhan and Jianlin Liu*, Unipolar resistive switching in Au/Cr/Mg0.84Zn0.16O2−δ/p+-Si, Applied Physics A-Materials Science & Processing, 107, 891-897 (2012). 18. Jing Qi*, Qing Zhang, Jian Huang, Jingjian Ren, Mario Olmedo, and Jianlin Liu*, Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage, IEEE Electron Device Letters, 32, 1445 (2011). 19. Daqiang Gao, Jing Zhang, Guijin Yang, Jing Qi, Mingsu Si, and Desheng Xue*, Ferromagnetism Induced by Oxygen Vacancies in Zinc Peroxide Nanoparticles, The Journal of Physical Chemistry C, 115, 16405 (2011).
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