陆海 - 南京大学 - 电子科学与工程学院

个人简介

于1996年和1999年在南京大学物理系获学士、硕士学位；于2003年在美国康奈尔大学（Cornell University）电子与计算机工程系获博士学位，师从美国工程院院士Lester Eastman教授；在康奈尔大学获得博士学位后，于2004年，受聘于美国通用电气公司（GE）研发中心任高级研究员；于2006年9月归国任教于南京大学物理系及电子科学与工程学院。

研究领域

1. GaN基高功率电子器件；2.宽禁带半导体紫外探测器件； 3.新型氧化物透明薄膜晶体管与电路。

近期论文

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Dong Zhou, Fei Liu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, “High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes.” IEEE Photonics Technology Letters, vol. 26, no. 11, pp. 1136-1138, 2014. Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, and Youdou Zheng, “Enhanced bias stress stability of amorphous indium-gallium-zinc oxide thin film transistors by inserting ultra-thin InGaZnO:N layer at the channel/gate insulator interface.” Appl. Phys. Lett. vol. 102, no. 19, pp. 193505, 2013. G. S. Wang, H. Lu, D. J. Chen, R. Zhang, and Y. D. Zheng, “High quantum efficiency GaN-based p-i-n photodetectors prepared on patterned sapphire substrates,” IEEE Photon. Technol. Lett., vol. 25, pp. 652, 2013. Feng Xie, Hai Lu, Dunjun Chen, Xiaoli Ji, Feng Yan, Rong Zhang, Youdou Zheng, Liang Li, and Jianjun Zhou; “Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications.” IEEE Sensors Journal, vol. 12, no. 6, pp. 2086, 2012. Feng Xie, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, and Youdou Zheng; “Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN” IEEE Photonics Technology Letters, vol. 24, no. 24, pp. 2203, 2012. Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Qingyu Xu, Rong Zhang, and Youdou Zheng “Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination.” Appl. Phys. Lett., vol. 100, no. 24, pp. 243505, 2012. F. Xie, Hai Lu, D. J. Chen, X. Q. Xiu, XQ, H. Zhao, R. Zhang, Y. D. Zheng; “Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate.” IEEE ELECTRON DEVICE LETTERS (2011), 32 (9), 1260-1262. L. H. Fu, Hai Lu, D. J. Chen, R. Zhang, Y. D. Zheng, T. S. Chen, K. Wei, X. Y. Liu; “Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors.” APPLIED PHYSICS LETTERS (2011), 98 (17), 173508. D. W. Yan, Hai Lu, D. S. Cao, D. J. Chen, R. Zhang, Y. D. Zheng; “On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors. ” APPLIED PHYSICS LETTERS (2010) 97 (15), 153503. D. W. Yan, Hai Lu, D. J. Chen, R. Zhang, Y. D. Zheng; “Forward tunneling current in GaN-based blue light-emitting diodes.” APPLIED PHYSICS LETTERS (2010), 96(8), 083504.