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研究领域

光电子薄膜材料与物理 包括:新型光伏材料与器件,硅基薄膜生长机制

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Chemical Etching of Si in a Low Cu2+ Concentration Region, ECS Journal of Solid State Science and Technology, 2015,4 (8)331-336. G. Q. Dong, F. Z. Liu*, J. Liu, H. L. Zhang and M. F. Zhu, Realization of radial p-n junction silicon nanowires solar cell based on low temperature and shallow phosphorus doping, Nanoscale Res. Lett. 2013,8, 544-548. Yurong Zhou, Fengzhen Liu*, Meifang Zhu, Xiaohui Song, and Ping Zhang, Insulator-to-metal transition in heavily Ti-doped silicon thin film, Appl. Phys. Lett., 2013,102, 222106. Yurong Zhou, Fengzhen Liu*, Xiaohui Song, The insulator-to-metal transition of Co hyperdoped crystalline silicon, J. Appl. Phys. 2013,113, 103702. Kinetic roughneing and mound surface growth in microcrystalline Si thin films Fengzhen Liu*, Chaowei Li, Meifang Zhu, Jinhua Gu, and Yuqin Zhou, Phys. Status Solidi C , (2010)533. Aligned amorphous and microcrystalline Si nanorods by glancing angle deposition at low temperature, Yanhong Ma, FengzhenLiu*, Meifang Zhu, Jinlong Liu, Huan-huaWang, Yi Yang and Yongfang Li, Nanotechnology 20 (2009) 275201. Silicon Nanorods Prepared by Glancing Angle-Catalytic Chemical Vapor Deposition,Yanhong Ma, Fengzhen Liu*, Meifang Zhu and Penggang Yin, Thin Solid Films 517 (2009) 3492. The comparisons of growth mechanisms for Si thin films with different deposition rates in CVD process by the description of the roughness evolution, F. Liu*, Z. Sun, W. Zi, Y. Zhou, M. Zhu, Journal of Non-Crystalline Solids, 354 (2008) 2345. Nano-Structure in Micro-Crystalline Si Thin Films Studied by Small-Angle X-Ray Scattering, 3rd International Conference on Cat-CVD Process,Bingqing Zhou, Fengzhen Liu*, Jinhua Gu, Qunfang Zhang, Yuqin Zhou, Meifang Zhu. Thin Solid Films, 501 (2006) 113. Anisotropic Electronic Transport in Microcrystalline Silicon Thin Films, Fengzhen Liu, Meifang Zhu, Qi Wang, Physics letters A, 331 (2004) 432. Amorphous silicon nitride deposited by hot-wire chemical vapor deposition,Fengzhen Liu, Bob To, Qi Wang*, Errol Sanchez and Shulin Wang, J. Appl. Phys., 96 (2004) 2973.

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