个人简介
教育经历：
2009.08 - 2013.08香港中文大学电子工程学哲学博士；
2008.09 - 2009.06香港科技大学电子工程学理学硕士；
2004.09 - 2008.06南京大学电子信息科学与技术理学学士。
工作经历：
2013.10.07 - 2016.10.08香港中文大学电子工程学学系博士后研究员；
2013.09.01 - 2013.10.06香港中文大学电子工程学学系兼任助理研究员；
2009.06.01 - 2013.08.31香港中文大学电子工程学学系初级助理研究员。
研究领域
一直从事于二维材料领域(包括graphene,h-BN, TMDs)的研究，特别对用于大面积低成本制备二维材料化学气相沉积(CVD)系统的设计，搭建与改进，及其有效转移和光电器件物理，在实验和理论上完成了一系列研究工作
近期论文
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X. Wan#,K. Chen# ,Z. Chen,F. Xie, X. Zeng,W. Xie,J. Chen,J. Xu*, Electrochemical Deposition of Large-Area High-Quality MoS2on Graphene in Aqueous Solution2016(under review)
Kun Chen#,Xi Wan#*,J. Xu*, EpitaxialStitching and Stacking Growth of Atomically Thin Transition-Metal Dichalcogenide (TMDCs)Heterojunctions，Adv. Funct. Mater.2016(Revised)
X. Wan#, K. Chen#, W. Xie, J. Wen, H. Chen, J. B. Xu*, Quantitative Analysis of Scattering Mechanisms in Highly Crystalline CVD MoS2through a Self-Limited Growth Strategy by Interface Engineering,Small2016,12, 438-445.
K. Chen#,X. Wan#, W. Xie, J. Wen, Z. Kang, X. Zeng, H. Chen, J. Xu*, Lateral Built-In Potential of Monolayer MoS2–WS2In-Plane Heterostructures by a Shortcut Growth Strategy,Adv. Mater.2015,27, 6431-6437.
K. Chen#, X. Wan#, J. Wen, W. Xie, Z. Kang, X. Zeng, H. Chen, J. B. Xu*, Electronic Properties of MoS2–WS2Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy,Acs Nano2015,9, 9868-9876.
X. Wan#, K. Chen#,, J. Xu*, Interface engineering for CVD graphene: current status and progress,Small2014,10, 4443-4454.
X. Wan, K. Chen, J. Du, D. Q. Liu, J. Chen, X. Lai, W. G. Xie, J. B. Xu*, Enhanced Performance and Fermi-Level Estimation of Coronene-Derived Graphene Transistors on Self-Assembled Monolayer Modified Substrates in Large AreasJ. Phys. Chem. C2013,117, 4800-4807.
K. Chen#,X. Wan#, D. Liu, Z. Kang, W. Xie, J. Chen, Q. Miao, J. Xu*, Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperatureNanoscale2013,5, 5784-5793.
K. Chen#,X. Wan#, J. B. Xu*, Controllable modulation of the electronic properties of graphene and silicene by interface engineering and pressure,J. Mater. Chem. C2013,1, 4869-4878.
X. Wan#, K. Chen#, D. Q. Liu, J. Chen, Q. Miao, J. B. Xu*, High-Quality Large-Area Graphene from Dehydrogenated Polycyclic Aromatic Hydrocarbons,Chem. Mater.2012,24, 3906-3915.
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