近期论文
查看导师最新文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
Y.H. Zheng, W.X. Song, Z.T. Song*, Y.Y. Zhang, T.J. Xin, C. Liu, Y. Xue, S.N. Song, B. Liu, X.L. Lin, V. G Kuznetsov, I. I Tupitsyn, A.V. Kolobov*, Y. Cheng*. A complicated route from disorder to order in antimony–tellurium binary phase change materials. Advanced Science, 2024, 11, 2301021.
D.L. He#, Y.H. Zheng#, D.G. Ding, H. Ma, A.X. Zhang, Y. Cheng*, W. Zhao*, C.H. Jin. Titanium self-intercalation induced formation of orthogonal (1×1) edge/surface reconstruction in 1T-TiSe2: atomic scale dynamics and mechanistic study. Nano Letters, 2024, 24, 3835.
Y.W. Wang, Q.L. Zhong, Z.M. Gao, Y.Z. Zheng, T.J. Xin, C. Liu, Y.L. Xu, Y.H. Zheng, Y. Cheng. Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films. Ceramics International, 2024, doi: 10.1016/j.ceramint.2024.02.200.
Y.Z. Zheng, Y.L. Xu, F.R. Sui, Z.M. Gao, J. Chen, Z. Guan, L.Q. Wei, Z.Y. Jia, T.J. Xin, Y.W. Wang, C. Liu, R. Wang, Y.H. Zheng, C. Li, X.L. Lin, S.J. Gong, Y. Cheng. Influence of interface on the domain polarization orientation in ferroelectric Hf0.5Zr0.5O2 thin films. Ceramics International, 2024, doi: 10.1016/j.ceramint.2024.03.055.
W.X. Song, Q.Y. Tang, J. Zhao, M. Veron, X.L. Zhou, Y.H. Zheng, D.L. Cai, Y. Cheng, T.J. Xin, Z.P. Liu, Z.T. Song. Tuning the crystallization mechanism by composition vacancy in phase change materials. ACS Applied Materials & Interfaces, 2024, 16, 15023.
C. Liu#, Q.Y. Tang#, Y.H. Zheng*, J. Zhao, W.X. Song, Y. Cheng. Effect of vacancy ordering on the grain growth of Ge2Sb2Te5 film. Nanotechnology, 2023, 34: 155703.
C. Liu, Y.H. Zheng*, T.J. Xin, Y.Z. Zheng, R. Wang, Y. Cheng. The relationship between electron transport and microstructure in Ge2Sb2Te5 alloy. Nanomaterials, 2023, 13: 582.
Y.Z. Zheng, Y.K. Zhang, T.J. Xin, Y.L. Xu, S.Q. Qu, J.D. Zheng, Z.M. Gao, Q.L. Zhong, Y.W. Wang, X.Y. Feng, Y.H. Zheng, Y. Cheng, R.W. Shao, F. Lin, X.L. Lin, H. Tian, R. Huang, C.G. Duan, H.B. Lyu. Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films. Materials Today Nano, 2023, 24, 100406.
Z.M. Gao, W.F. Zhang, Q.L. Zhong, Y.H. Zheng, S.X. Lv, Q.Q. Wu, Y.L. Song, S.J. Zhao, Y.Z. Zheng, T.J. Xin, Y.W. Wang, W. Wei, X.Q. Ren, J.G. Yang, C. Ge, J.H. Tao, Y. Cheng, H.B. Lyu. Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization. Device, 2023, 1: 100004.
B. Wu, T. Wei, Q.C. Liu, Y. Cheng, Y.H. Zheng, R.R. Wang, Q.Q. Liu, M. Cheng, W.F. Li, J. Hu, Y. Ling, B. Liu. Ultrafast SET/RESET operation for optoelectronic hybrid phase-change memory device cells based on Ge2Sb2Te5 material using partial crystallization strategy. Applied Physics Letters, 2023, 123, 191110.
H. Lu, L. Li, Z.W. Tang, M.J. Xu, Y.H. Zheng, M. Becker, Y.M. Lu, M.K. Li, P. Li, Z.L. Zhang, P.J. Klar, Y.B. He. Correlation of metal-to-insulator transition and strain state of VO2 thin films on TiO2 (110) substrates. Applied Physics Letters, 2023, 123, 042103.
J. Hu, C. Lin, Y. Cheng, Y.H. Zheng, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, R.R. Wang, S.N. Song, Z.T. Song, Y.H. Wei, B. Liu. Co-doping: An effective strategy for developing stable and high-speed Sb2Te-based phase-change memory. Applied Physics Letters, 2023, 122: 222108.
P.H. Xu, T. Wei, J. Hu, M. Cheng, W.F. Li, Q.Q. Liu, R.R. Wang, Y. Ling, Y.H. Zheng, Y. Cheng, B. Liu. GeTe/CrSb2Te superlattice-like thin film for excellent thermal stability and high phase change speed. Journal of Alloys and Compounds, 2023, 942: 169073.
Y.H. Zheng#, T.J. Xin#, J. Yang, Y.Z. Zheng, Z.M. Gao, Y.W. Wang, Y.L. Xu, Y. Cheng*, K. Du, D.Q. Su, R.W. Shao, B.X. Zhou, Z. Yuan, Q.L. Zhong, C. Liu, R. Huang, X.D. Tang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. In-situ atomic-level observation of reversible first-order transition in Hf0.5Zr0.5O2 ferroelectric film. IEEE International Electron Devices Meeting (IEDM), 2022: 6-3.
T.J. Xin#, Y.H. Zheng#, Y. Cheng*, K. Du, Y.W. Wang, Z.M. Gao, D.Q. Su, Y.Z. Zheng, Q.L. Zhong, C. Liu, R. Huang, C.G. Duan, S.N. Song, Z.T. Song, H.B. Lyu*. Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2 ferroelectric film with in-situ rapid thermal annealing. Symposium on VLSI Technology, 2022: T7-4.
C. Liu#, Q.Y. Tang#, Y.H. Zheng*, B. Zhang, J. Zhao, W.X. Song, Y. Cheng*, Z.T. Song. The origin of hexagonal phase and its evolution process in Ge2Sb2Te5 alloy. APL Materials, 2022, 10: 021102.
Y. Cheng#, Z.M. Gao#, K.H. Ye, H.W. Park, Y.H. Zheng, Y.Z. Zheng, J.F. Gao, M.H. Park, J.H. Choi, K.H. Xue, C.S. Hwang*, H.B. Lyu*. Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin films. Nature Communications, 2022, 13: 645.
刘成，赵进，辛天骄，郑勇辉，宋文雄，成岩. 功能材料与器件学报，2022.
许亦琳，辛天骄，郑赟喆，高兆猛，郑勇辉，成岩. 功能材料与器件学报，2022.
C. Yoo, J.W. Jeon, S. Yoon, Y. Cheng, G. Han, W. Choi, B. Park, G. Jeon, S. Jeon, W. Kim, Y.H. Zheng, J. Lee, J. Ahn, S. Cho, S.B. Clendenning, I.V. Karpov, Y.K. Lee, J.H. Choi, C.S. Hwang. Atomic layer deposition of Sb2Te3/GeTe superlattice film and its melt-quenching-free phase-transition mechanism for phase-change memory. Advanced Materials, 2022, 2207143.
J. Hu, C. Lin, L.Y. Peng, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, J. Zhou, Y. Cheng, Y.H. Zheng, Z.M. Sun, B. Liu. Cr-doped Sb2Te materials promising for high performance phase-change random access memory. Journal of Alloys and Compounds, 2022, 908: 164593.
C. Lin, J. Hu, T. Wei, W.F. Li, Y. Ling, Q.Q. Liu, M. Cheng, S.N. Song, Z.T. Song, Y. Cheng, Y.H. Zheng, B. Liu. Excellent thermal stability attributed to Cr dopant in Sb2Te phase change material. Materials Letters, 2022, 315: 131977.
D.G. Ding, S. Wang, Y.P. Xia, P. Li, D.L. He, J.Q. Zhang, S.W. Zhao, G.H. Yu, Y.H. Zheng, Y. Cheng, M.H. Xie, F. Ding, C.H. Jin. Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au (111) Substrate. ACS Nano, 2022, 16: 17356-17364.
Z. Chen, Y.H. Zheng, Y. Huang, Z.C. Gao, H.P. Sheng, M. Bartosik, P. H Mayrhofer, Z.L. Zhang. Atomic-scale understanding of the structural evolution in TiN/AlN superlattice during nanoindentation—Part 2: Strengthening. Acta Materialia, 2022, 234: 118009.
E. Sharifikolouei, B. Sarac, Y.H. Zheng, P. Bala, J. Eckert. Fabrication of stainless-steel microfibers with amorphous-nanosized microstructure with enhanced mechanical properties. Scientific Reports, 2022, 12: 10784.
Y.H. Zheng, Z. Chen, H. Lu, Y. Cheng*, X. Chen, Y.B. He*, Z.L. Zhang*, The formation of TiO2/VO2 multilayer structure via directional cationic diffusion. Nanoscale, 2021, 13: 7783-7791.
Y.Z. Zheng#, Y.H. Zheng#, Z.M. Gao, J.-H. Yuan, Y. Cheng*, Q.L. Zhong, T.J. Xin, Y.W. Wang, C. Liu, Y.R. Huang, R. Huang, X.S. Miao, K.-H. Xue*, H.B. Lyu*. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation. IEEE International Electron Devices Meeting (IEDM) 2021: 33-5.
Y.Z. Zheng#, C.R. Zhong#, Y.H. Zheng, Z.M. Gao, Y. Cheng*, Q.L. Zhong, C. Liu, Y.W. Wang, R.J. Qi, R. Huang and H.B. Lyu*. In-situ atomic visualization of structural transformation in Hf0.5Zr0.5O2 ferroelectric thin film: from nonpolar tetragonal phase to polar orthorhombic phase. Symposium on VLSI Technology 2021: T16-3.
Q.L. Zhong, Y.W. Wang, Y. Cheng*, Z.M. Gao, Y.Z. Zheng, T.J. Xin, Y.H. Zheng, R. Huang, H.B. Lyu*. Optimization of the in situ biasing FIB sample preparation for hafnia-based ferroelectric capacitor. Micromachine, 2021, 12: 1436.
W.Q. Xu, Y.H. Zheng, Y. Cheng, R.J. Qi*, H. Peng, H.C. Lin, R. Huang*. Understanding the effect of Al doping on the electrochemical performance improvement of the LiMn2O4 cathode material. ACS Applied Materials Interfaces, 2021, 13: 45446-45454.
Y. Cheng*, Y.H. Zheng, Z.T. Song, Reversible switching in bicontinuous structure for phase change random access memory application. Nanoscale, 2021, 13: 4678-4684.
Z.M. Gao, Y.B. Luo, S.X. Lyu, Y. Cheng, Y.H. Zheng, Q.L. Zhong, W.F. Zhang, H.B. Lyu, Identification of ferroelectricity in a capacitor with ultra-thin (1.5-nm) Hf0.5Zr0.5O2 film. IEEE Electron Device Letters, 2021, 99: 1-1.
Z. Chen, Y.H. Zheng, L. L?fler, M. Bartosik, G.K. Nayak, O. Renk, D. Holec, P. H. Mayrhofer, Z.L. Zhang, Atomic insights on intermixing of nanoscale nitride multilayer triggered by nanoindentation.Acta Materialia, 2021, 214: 117004.
Z. Chen, Y.H. Zheng, L. L?fler, M. Bartosik, H.P. Sheng, C. Gammer, D. Holec, Z.L. Zhang. Real-time atomic-resolution observation of coherent twin boundary migration in CrN. Acta Materialia, 2021, 208: 116732.
W.Q. Xu, Y.H. Zheng, L.N. Lin, W.B. Lei, Z.G. Wang, H.L. Song, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, Z.Z. Yang, R. Huang. Atomic insights into surface orientations and oxygen vacancies in the LiMn2O4 cathode for lithium storage. Journal of Alloys and Compounds, 2021, 870: 159387.
W.Q. Xu, H.K. Li, Y.H. Zheng, W.B. Lei, Z.G. Wang, Y. Cheng, R.J. Qi, H. Peng, H.C. Lin, F.Y. Yue, R. Huang. Atomic insights into Ti doping on the stability enhancement of truncated octahedron LiMn2O4 nanoparticles. Nanomaterials, 2021, 11: 508.
L.J. Wan, Y.Q. Tang, L. Chen, K. Wang, J.Q. Zhang, Y. Gao, J.Y. Lee, T. Lu, X.T. Xu, J.B. Li, Y.H. Zheng, L.K. Pan. In-situ construction of g-C3N4/Mo2CTx hybrid for superior lithium storage with significantly improved Coulombic efficiency and cycling stability. Chemical Engineering Journal, 2021, 410: 128349.
Y.H. Zheng#, R.J. Qi#, Y. Cheng*, Z.T. Song. The crystallization mechanism of zirconium-doped Sb2Te3 material for phase-change random-access memory application. Journal of Materials Science: Materials in Electronics, 2020, 31: 5861-5865.
Y. Cheng# *, D.L. Cai#, Y.H. Zheng#, S. Yan, L. Wu, C. Li, W.X. Song*, T.J. Xin, S.L. Lv, R. Huang, H.B. Lv, Z.T. Song*, S.L. Feng. Microscopic mechanism of carbon-dopant manipulating device performance in CGeSbTe-based phase change random access memory. ACS Applied Materials & Interfaces, 2020, 12: 23051.
Y. Xue, Y. Cheng, Y.H. Zheng, S. Yan, W.X. Song, S.L. Lv, S.N. Song*, Z.T. Song*. Phase change memory based on Ta-Sb-Te alloy-towards a universal memory. Materials Today Physics, 2020, 15: 1002680.
Q. Luo#, Y. Cheng#, J.G. Yang, R.R. Cao, H.L. Ma, Y. Yang, R. Huang, W. Wei,Y.H. Zheng, T.C. Gong, J. Yu, X.X. Xu, P. Yuan, X.Y. Li, L. Tai, H.R. Yu, D.S. Shang, Q. Liu, B. Yu, Q.W. Ren, H.B. Lv*, M. Liu*. A highly CMOS compatible hafnia-based ferroelectric diode. Nature Communications, 2020, 11: 1391.
C.R. Zhong#, R.J. Qi#, Y.H. Zheng, Y. Cheng*, W.X. Song* and R. Huang. The Relationships of Microscopic Evolution to Resistivity Variation of a FIB-Deposited Platinum Interconnector. Micromachines, 2020, 11: 588.
Z.L. Zhang, Z. Chen, D. Holec, C. H. Liebscher, N. Koutná, M. Bartosik, Y.H. Zheng, G. Dehm, P. H. Mayrhofer. Mapping the mechanical properties in nitride coatings at the nanometer scale. Acta Materialia, 2020, 194: 343.
J. Kim, V. Soprunyuk, N. Chawake, Y.H. Zheng, F. Spieckermann, S. Hong, K. Kim, J. Eckert. Outstanding strengthening behavior and dynamic mechanical properties of in-situ Al-Al3Ni composites by Cu addition. Composites Part B., 2020, 189: 107891.
Y.H. Zheng, Y. Wang, T.J. Xin, Y. Cheng*, R. Huang, P. Liu, M. Luo, Z.L. Zhang, S.L. Lv, Z.T. Song* and S.L. Feng. Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5. Communications Chemistry, 2019, 2: 13.
X. Chen, J.B. Shen, S.J. Jia, Y.H. Zheng, S.L. Lv, Z.T. Song, M. Zhu. Observation of van der Waals reconfiguration in superlattice phase change materials. Nanoscale, 2019, 11: 16954.
Y.Y. Lu, D.L. Cai, Y.F. Chen, Y.H. Zheng, S. Yan, L. Wu, Y.G. Liu, Y. Li, Z.T. Song. The Impact of the Electrode Performance on the Endurance Properties of the Phase Change Memory Device. IEEE Transactions on Device and Materials Reliability, 2019, 19: 164-168.
X. Chen,Y.H. Zheng, M. Zhu, K. Ren, Y. Wang, T. Li, G.Y. Liu, T.Q. Guo, L.C. Wu, X.Q. Liu, Y. Cheng* and Z.T. Song. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application. Scientific Reports, 2018, 8: 6839.
Y. Wang, Y.H. Zheng, G.Y. Liu, T. Li, T.Q. Guo, Y. Cheng, S.L. Lv, S.N. Song, K. Ren*, Z.T. Song. Scandium doping Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory. Applied Physics Letters, 2018, 112: 133104.
T.Q. Guo*, S.N. Song*,Y.H. Zheng, Y. Xue, S. Yan, Y.X. Liu, T. Li, G.Y. Liu, Y. Wang, Z.T. Song. Excellent thermally stability owing to Ge and C doping in Sb2Te-based high-speed phase-change memory. Nanotechnology, 2018, 29: 505710.
Y. Wang, T.B. Wang, Y.H. Zheng, G.Y. Liu, T. Li, S.L. Lv, W.X. Song, S.N. Song, Y. Cheng, K. Ren, Z.T. Song. Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application. Scientific Reports, 2018, 8: 15136.
T. Li, L.C. Wu, X.L. Ji, Y.H. Zheng, G.Y. Liu, Z.T. Song, J.J. Shi, M. Zhu, S.N. Song, S.L. Feng. Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum. AIP Advances, 2018, 8: 025201.
X.M. Ge, Y.H. Zhang, L.X. Chen, Y.H. Zheng, Z.Y. Chen, Y.J. Liang, S.K. Hu, J. Li, Y.P. Sui, G.H. Yu, Z. J. X.Y. Liu. Mechanism of SiOx particles formation during CVD graphene growth on Cu substrates. Carbon, 2018, 139: 989-998.
Y.H. Zheng, Y. Cheng*, R. Huang, R.J. Qi, F. Rao*, K.Y. Ding, W.J. Yin, S.N. Song, W.L. Liu, Z.T. Song and S.L. Feng. Surface energy driven cubic-to-hexagonal grain growth of Ge2Sb2Te5 thin film. Scientific Reports 2017, 7: 5915
F. Rao# *, K.Y. Ding#, Y.X. Zhou#, Y.H. Zheng, M.J. Xia, S.L. Lv, Z.T. Song*, S.L. Feng, I. Ronneberger, R. Mazzarello, W. Zhang* and E. Ma. Reducing the stochasticity of crystal nucleation to enable sub-nanosecond memory writing. Science 2017, 358: 1423.
Y.H. Zheng, Y. Cheng*, M. Zhu, X.L. Ji, Q. Wang, S.N. Song, Z.T. Song, W.L. Liu and S.L. Feng. A candidate Zr-doped Sb2Te alloy for phase change memory application. Applied Physics Letters, 2016, 108: 052107.
Y.H. Zheng#, M.J. Xia#, Y. Cheng*, F. Rao*, K.Y. Ding, W.L. Liu, Y. Jia, Z.T. Song* and S.L. Feng. Direct observation of metastable face-centered cubic Sb2Te3 crystal. Nano Research, 2016, 9: 3453-3462.
Y.H. Zheng, Y. Cheng*, Z.T. Song, W.J. Yin, M. Zhu, W.L. Liu, S.N. Song and S.L. Feng. Self-precipitated process of Te nanowire from Zr-doped Sb2Te3 film. Materials Science Forum, 2016, 848: 489.
Q. Wang, M.H. Jiang, B. Liu*, Y. Wang*, Y.H. Zheng, S.N. Song, Y.Q. Wu, Z.T. Song and S.L. Feng. Reversible phase change characteristics of Cr-doped Sb2Te3 films with different initial states induced by femtosecond pulses. ACS Applied Materials & Interfaces, 2016, 8: 20885-20893.
C.L. Liang, W.L. Liu*, Y.H. Zheng, X.L. Ji, S.S. Lia, W.J. Yin, X.H. Guo and Z.T. Song. Fractal nature of non-spherical silica particles via facile synthesis for the abrasive particles in chemical mechanical polishing. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2016, 500: 146-153.
Q. Wang, B. Liu, Y.Y. Xia, Y.H. Zheng, S.N. Song, Y. Cheng, Z.T. Song, S.L. Feng. Electrical properties of Cr-doped Sb2Te3 phase change material. 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, 9818: 98180H.
Y.Y. Xia*, B. Liu*, Q. Wang, Z.H. Zhang, S.S. Li, Y.H. Zheng, L. Li, S.N. Song, W.J. Yin, D.N. Yao, Z.T. Song and S.L. Feng. Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory. Microelectronic Engineering, 2016, 161: 69.
L.L. Cao, L.C. Wu, Z.T. Song, W.Q. Zhu, Y.H. Zheng, Y. Cheng, S.N. Song, Z.Y. Ma, L. Xu. Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications. Materials Science Forum, 2016, 848: 460-465.
X.L. Ji, L.C. Wu*, L.L. Cao, M. Zhu, F. Rao, Y.H. Zheng, W.Y. Zhou, Z.T. Song, S.L. Feng. Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application. Applied Physics Letters, 2015, 106: 243103.
Q. Wang, B. Liu*, Y.Y. Xia,Y.H. Zheng, R.R. Huo, Q. Zhang, S.N. Song, Y. Cheng, Z.T. Song and S.L. Feng. Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory. Applied Physics Letters, 2015, 107: 222101.
Q. Wang*, B. Liu*, Y.Y. Xia, Y.H. Zheng, R.R. Huo, M. Zhu, S.N. Song, S.L. Lv, Y. Cheng, Z.T. Song and S.L. Feng. Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory. Phys. Status Solidi RRL, 2015, 9: 470.
L.L. Chen, S.N. Song, Z.T. Song, L. Li, Z.H. Zhang, Y.H. Zheng, Q.Q. Zheng, X. Zhang, X.W. Zhu, H.H. Shao. Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application. Applied Surface Science, 2015, 357: 603-607.
L.L. Cao, L.C. Wu*, W.Q. Zhu*, X.L. Ji,Y.H. Zheng, Z.T. Song, F. Rao, S.N. Song, Z.Y. Ma and L. Xu. High thermal stable and fast switching Ni-Ge-Te alloy for phase change memory applications. Applied Physics Letters, 2015, 107: 242101.
京公网安备 11010802027423号