高玉竹 - 同济大学 - 电子与信息工程学院

个人简介

高玉竹，女，1974年6月出生，研究员任职年份为2009年。学术兼职：美国电气与电子学会（IEEE）职业会员（IEEE会员号：94891511），中国光学工程学会高级会员，国家基金委项目评议人。2002年，在日本国立静岡大学取得工学博士学位。回国后，2011. 9 ~ 2012. 2，去日本国立静岡大学，做高级访问学者，职位为访问教授。

研究领域

主要研究新型红外材料。高博士在日本留学期间，发明了一种新的晶体生长方法—熔体外延（melt epitaxy，ME）法，是一种改进的液相外延法（LPE），并用该方法制备了长波铟砷锑（InAsSb）厚膜单晶，在国际科学期刊上发表了一批论文，在海外取得了发明专利。熔体外延法被收入世界著名科学出版社—英国威利（Wiley）出版的教科书，书名是“电子学、光学、及光电子材料的液相外延”（Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials, ISBN: 978-0-470-85290-3），IEEE学会吸收为职业会员，取得了国际科学界的承认。

近期论文

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Y. Z. Gao and T. Yamaguchi, Liquid Phase Epitaxial Growth and Properties of InSbBi Films grown from In, Bi, and Sn Solutions, Crystal Research and Technology, 1999, 34 (3): 285 - 292. Y. Z. Gao, X. Y. Gong, H. Kan, M. Aoyama, and T. Yamaguchi, InAs1-ySby Single Crystals with Cutoff Wavelength of 8-12 μm Grown by a New Method, Japanese Journal of Applied Physics, 1999, 38 (4A): 1939 - 1940. Y. Z. Gao, H. Kan, J. I. Murata, M. Aoyama, and T. Yamaguchi, High Purity InxGa1-xSb Single Crystals with Cutoff Wavelength of 7-8 μm Grown by Melt Epitaxy, Journal of ELECTRONIC MATERIALS, 2000, 29 (10): L25 - L27. Y. Gao, H. Kan, and T. Yamaguchi, The Improvement of Low Temperature Mobility of InAs0.04Sb0.96 Epilayers with Cut Off Wavelength of 12.5 μm by Annealing, Crystal Research and Technology, 2000, 35 (8): 943 - 947. Y. Z. Gao, H. Kan, M. Aoyama, and T. Yamaguchi, Germanium- and Zinc-Doped P-type InAsSb Single Crystals with a Cutoff Wavelength of 12.5 μm, Japanese Journal of Applied Physics, 2000, 39 (5A): 2520 - 2522. Y. Z. Gao, H. Kan, F. S. Gao, X. Y. Gong, and T. Yamaguchi, Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats, Journal of Crystal Growth, 2002, 234: 85 - 90. Y. Z. Gao, X. Y. Gong, Y. H. Chen, and T. Yamaguchi, High Quality InAs0.04Sb0.96/GaAs Single Crystals with a Cutoff Wavelength of 12 μm Grown by Melt Epitaxy, Proceeding of SPIE, 2006, 6029: 357-363. Y. Z. Gao, X. Y. Gong, G. H. Wu, Y. B. Feng, T. Makino, and H. Kan, Uncooled InAsSb Photoconductors with Long Wavelength, Japanese Journal of Applied Physics, 2011, 50 (6): 060206-1–060206-3. Yu-zhu Gao, Xiu-ying Gong, Guang-hui Wu, Yan-bin Feng, Takamitsu Makino, Hirofumi Kan, Tadanobu Koyama, and Yasuhiro Hayakawa, InAsSb thick epilayers applied to long wavelength photoconductors,International Journal of Minerals, Metallurgy, and Materials, 2013, 20 (4): 393-396. Y. Z. Gao, X. Y. Gong, Z. T. Chen, M. Niigaki, T. Koyama and Y. Hayakawa, Laser scanning confocal microscopy observations of InAsSb thin and thick epilayers [J]. Proceeding of SPIE, 2022, 12166: 1216619-1－1216619-7.