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Hsu-Sheng Tsai, You Wang, Chaoming Liu, Tianqi Wang, Mingxue Huo. The elemental 2D materials beyond graphene potentially used as hazardous gas sensors for environmental protection. Journal of Hazardous Materials. 2022, 423, 127148.
Yanqing Zhang, Jiaming Zhou, Chaoming Liu, Chunhua Qi, Tianqi Wang, Guoliang Ma, Bin Zhou, Liyi Xiao, Mingxue Huo. Electron Irradiation Effects and Defects Analysis of the Upright Metamorphic Four-Junction (UMM4J) Solar Cells. Physica Status Solidi A. 2022, 2100704.
Bi Wang, Min Wang, Hongchao Zhang, Zhaohao Wang, Yudong Zhuo, Xiangyue Ma, Kaihua Cao, Liang Wang, Yuanfu Zhao, Tianqi Wang, Chaoming Liu, Hongqiang Zhang, Yougang Zhang, Jun Wang, Weisheng Zhao. Ionization and Displacement Damage on Nanostructure of Spin-Orbit Torque Magnetic Tunnel Junction. IEEE Transaction on Nuclear Science. 2022, 69(1), 43-49
Heyi Li, Chaoming Liu, Yanqing Zhang, Chunhua Qi, Guoliang Ma, Tianqi Wang, Shangli Dong, Mingxue Huo. Modulation of 1 MeV electron irradiation on ultraviolet response in MoS2 FET. Nanotechnology, 2021, 32(47) 475205.
Heyi Li, Chaoming Liu, Yanqing Zhang, Tianqi Wang, Hongqiang Zhang, Pengfei Li, Chunhua Qi, Mingxue Huo, Shangli Dong. Effects of N-Ion Implantation on the Electrical and Photoelectronic Properties of MoS2 Field Effect Transistors. Physica Status Solidi A. 2021, 219(1), 2100551.
Chunhua Qi, Yanqing Zhang, Guoliang Ma, Chaoming Liu, Tianqi Wang, Liyi Xiao, Mingxue Huo, Fuofu Zhai. Design of a high-performance 12T SRAM cell for single event upset tolerance. Science China - Information Sciences, 2021, 64(11), 219401.
Tianqi Wang, Shenghuan Wang, Bin Zhou, Yun Tang, Lei Wang, Bo Li, Chaoming Liu, Zhenping Wu, Yongtao Yang, Bo Mei, Chunhua Qi, Yanqing Zhang, Ming Liu. Effects of 1 MeV Electron Irradiation on beta-Ga2O3 Photodetectors. ECS Journal of Solid State Science and Technology, 2021, 10(11), 115001.
Xiaotao Yang, Jianliang Wang, Rui Zhang, Zechang Shi, Keyi Li, Yidan Wei, Ao Guo, Guoshui Wang, Chenxi He, Jinhui Cui, Fengjun Tian, Chaoming Liu. Modification of spectrum and laser performance on a Tm3+ doped YAlO3 crystal by a specific electron beam radiation. Optik, 2021, 228, 166124.
Wei, Y., Wang, T., Zhang Y., Qi, C., Luan, J., Ma, G., Tsai, H., Liu, C., Huo, M., Effects of carbon related defects on opto-electronic properties of β-Ga2O3 : The first principle calculation[J]. Results in Physics. 2020, 103060. JCR Q1
Wei, Y., Liu, C., Wang, T., Zhang Y., Qi, C., Li H., Ma, G., Liu Y., Dong S., Huo, M., Electronegativity regulation on opt-electronic properties of non Van der Waals two-dimensional material Ga2O3[J]. Computational Materials Science. 2020, 179, 109692 JCR Q1
Zhang, Y., Qi, C., Zhou, J., Liu, C., Ma, G., Tsai, H., Wang, T., Huo, M., Thermal annealing effects of InGaAs (1.0eV) and InGaAs (0.7eV) sub-cells of inverted metamorphic four junction (IMM4J) solar cells under 1MeV electron irradiation [J]. Acta Phys. Sin. 2020, 69(22), 228802 JCR Q3
Wei, Y., Liu, C., Tsai, HS., Zhang, Y., Qi, C., Ma, G., Wang, T., Huo, M., Prediction of the Abnormal Properties in Monolayer alpha-AlxGa2-xO3 [J]. Advanced Theory and Simulations. 2020, 3(11), 2000102. JCR Q2
Zhang, Y., Qi, C., Wang, T., Ma, G., Tsai, H., Liu, C., Zhou, J., Wei, Y., Li, H., Xiao, L., Ma, Y., Wang, D., Tang, C., Li, J., Wu, Z., Huo, M., Electron Irradiation Effects and Defects Analysis of the Inverted Metamorphic Four-Junction Solar Cells [J]. IEEE Journal of Photovoltaics. 2020, 10(6), 1712-1720. JCR Q1
Lei Shu, Liang Wang, Kai Zhao, Xin Zhou, Yuanfu Zhao, Kenneth Galloway, Chenglong Sui, Chaoming Liu, Weiyi Cao, Weiping Chen, Ming Qiao, Tianqi Wang. TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS. IEEE Transactions on Nuclear Science, 2020, 67(6), 1133-1138.
Lei Shu, Yuanfu Zhao, Kenneth Galloway, Liang Wang, Kai Zhao, Xin Zhou, Chaoming Liu, Weiyi Cao, Chenglong Sui, Weiping Chen, Liyi Xiao, Tianqi Wang. TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI p-LDMOSFETs. IEEE Transactions on Nuclear Science, 2020, 67(7), 1390-1394.
Li, H., Liu, C., Zhang, Y., Qi, C., Wei, Y., Zhou, J., … Huo, M. Electron radiation effects on the structural and electrical properties of MoS2 field effect transistors[J]. Nanotechnology. 2019,30(48):485201. JCR Q1
Li, H., Liu, C., Zhang, Y., Qi, C., Wei, Y., Zhou, J., … Huo, M. Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations[J]. Semiconductor Science and Technology.2019,34(9): 095010. JCR Q1
Liu, C., Hübner, R., Xie, Y., Wang, M., Xu, C., Jiang, Z., … Zhou, S.. Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge[J]. Nanotechnology. 2019,30(5). JCR Q1
Liu, C., Zhang, Y., Qi, C., Li, H., Wei, Y., Wang, T., … Huo, M. Evolution of radiation defects in NPN bipolar junction transistors irradiated by 3？MeV protons[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.2019 ,444(December 2018), 50–53. JCR Q2
Wei, Y., Li, X., Liu, C., Liu, Y., Zhao, J., Dong, S., … Wang, Q. Atomic and electron analyzing of irradiation damage in Si/SiO2 interfaces caused by irradiation: First-principle calculation[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2019,451(11575049): 89–92. JCR Q2
Tsai, H.-S., Liu, F.-W., Liou, J.-W., Chi, C.-C., Tang, S.-Y., Wang, C., Liu, C, … Woon, W.-Y. Direct Synthesis of Large-Scale Multilayer TaSe2 on SiO2 /Si Using Ion Beam Technology[J]. ACS Omega, 2019,1–6.
Wei, Y., Liu, C., Zhang, Y., Qi, C., Li, H., Wang, T., … Huo, M. Modulation of electronic and optical properties by surface vacancies in low-dimensional β-Ga2O3[J]. Physical Chemistry Chemical Physics. 2019,21(27):14745–14752. JCR Q1
Wei, Y., Li, X., Yang, J., Liu, C., Zhao, J., Liu, Y., & Dong, S. Interaction between hydrogen and gallium vacancies in β-Ga2O3[J]. Scientific Reports.2018,8(1):1–8. JCR Q1
Liu, C., Berencén, Y., Yang, J., Wei, Y., Wang, M., Yuan, Y., … Zhou, S.. Irradiation effects on the structural and optical properties of single crystal β-Ga2O3[J]. Semiconductor Science and Technology. 2018,33(9). JCR Q1
Li, X., Yang, J., Liu, C., Bai, G., Luo, W., & Li, P.. Synergistic effects of NPN transistors caused by combined proton irradiations with different energies[J]. Microelectronics Reliability.2018,82(11575049): 130–135. JCR Q2
Yang, J., Li, X., Liu, C., & Fleetwood, D. M.. The effect of ionization and displacement damage on minority carrier lifetime[J]. Microelectronics Reliability. 2018,82(October 2017):124–129. JCR Q2
Li, X., Yang, J., & Liu, C.. A Technique for Characterizing Ionization and Displacement Defects in NPN Transistors Induced by 1-MeV Electron Irradiation[J]. IEEE Transactions on Nuclear Science.2018,65(1): 539–544. JCR Q2 top
Li, X., Yang, J., Liu, C., Li, P., Zhao, Y., & Liu, G.. Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations[J]. IEEE Transactions on Nuclear Science, 2017,64(3): 976–982. JCR Q2 top
Li, X., Yang, J., Barnaby, H. J., Galloway, K. F., Schrimpf, R. D., Fleetwood, D. M., & Liu, C.. Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration[J]. IEEE Transactions on Nuclear Science.2017,64(6): 1549–1553. JCR Q2 top
Li, X., Yang, J., & Liu, C.. Evolution of Activation Energy of Interface Traps in LPNP Transistors Characterized by Deep-Level Transient Spectroscopy[J]. IEEE Transactions on Nuclear Science. 2017,64(7):1905–1911. JCR Q2 top
Li, X., Dong, L., Yang, J., & Liu, C.. Impact of Passivation Layers on Irradiation Response of PNP Transistors under Different Dose Rates[J]. IEEE Access, 2017,5: 22194–22198. JCR Q1
Yang, J., Zhang, X., Liu, C., Li, X., Li, H., Ma, G., & Tian, F.. Effects of 1 MeV electrons on the deformation mechanisms of polyethylene/carbon nanotube composites[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2017,409:2–8. JCR Q2
Liu, C., Zhang, X., Yang, J., Li, X., & Ma, G.. Radiation damage and defects in NPN bipolar junction transistors irradiated by silicon ions with various energies[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.2017,409: 246–250. JCR Q2
Barnaby, H. J., Schrimpf, R. D., Galloway, K. F., Li, X., Yang, J., & Liu, C.. Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt. IEEE Transactions on Nuclear Science.2017,64(1): 149–155. JCR Q2 top
Li, X., Li, P., Yang, J., & Liu, C.. Research on interaction between displacement defects and oxide charge in NPN transistors based on deep level transient spectroscopy[C]. Proceedings of the European Conference on Radiation and Its Effects on Components and Systems, RADECS, 2016-Septe, 2017,1–4.
Li, X., Liu, C., & Yang, J.. Correction to: Synergistic effect of ionization and displacement damage in NPN transistors caused by protons with various energies[J]. IEEE Transactions on Nuclear Science.2016,63(5):2747.
Liu, C., Li, X., Yang, J., Ma, G., Xiao, L., & Bollmann, J.. Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.2015,365: 244–246.
Yang, J., Ma, G., Li, X., Liu, C., Yang, D., & He, S.2015. Effects of multilayer and multimaterial structures on space proton radiation protection. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.2015,365(August 1972):352–356.
Yang, J., Li, X., Liu, C., Rui, E., & Wang, L.. Effects of electron irradiation on LDPE/MWCNT composites[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.2015,365:55–60.
Liu, C., Yang, J., Li, X., Ma, G., Xiao, L., & Bollmann, J.. Radiation induced deep level defects in bipolar junction transistors under various bias conditions[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms.2015,365:247–251.
Liu, C., Li, X., Yang, J., Ma, G., & Xiao, L.. Bias dependence of synergistic radiation effects induced by electrons and protons on silicon bipolar junction transistors[J]. Radiation Physics and Chemistry. 2015,111:36–39.
Yang, J., Li, X., Liu, C., & Ma, G.. Changes of structure and electrical conductivity of multi-walled carbon nanotubes film caused by 3 MeV proton irradiation[J]. Applied Surface Science.2015,325(C):235–241.
Li, X., Liu, C., Yang, J., Ma, G., Jiang, L., & Sun, Z.. Synergistic Effect of Ionization and Displacement Defects in NPN Transistors Induced by 40-MeV Si Ion Irradiation with Low Fluence[J]. IEEE Transactions on Device and Materials Reliability. 2015,15(4):511–518.
Liu, C., Li, X., Yang, J., Ma, G., & Sun, Z.. Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-MeV Protons[J]. IEEE Transactions on Nuclear Science.2015,62(6):3381–3386.
Li, X., Liu, C., Yang, J., & Ma, G.. Research on the combined effects of ionization and displacement defects in NPN transistors based on deep level transient spectroscopy[J]. IEEE Transactions on Nuclear Science.2015,62(2):555–564.
Li, X., Liu, C., & Yang, J.. Separation of interface traps and oxide charge in ionization damaged silicon bipolar transistors based on experimental observation[J]. IEEE Transactions on Device and Materials Reliability. 2015,15(2):258–260.
Li, X., Liu, C., & Yang, J.. Synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons with Various Energies. IEEE Transactions on Nuclear Science.2015,62(3): 1375–1382.
Rui, E., Yang, J., Li, X., Liu, C., Tian, F., Gao, F., … Geng, H.. Structure evolution during uniaxial tensile deformation of high density polyethylene before and after irradiation by 1 MeV electrons[J]. Journal of Applied Polymer Science. 2014,131(10):1–10.
Rui, E., Yang, J., Li, X., Liu, C., & Tian, F.. Effect of 110 keV electrons on the deformation mechanisms of low density polyethylene[J]. Polymer Degradation and Stability.2014,109:59–70.
Liu, C., Li, X., Yang, J., & Rui, E.. Annealing effects and DLTS study on NPN silicon bipolar junction transistors irradiated by heavy ions. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.2014, 735:198–201.
Liu, C., Li, X., Yang, J., & Bollmann, J.. Annealing effects and DLTS study on PNP silicon bipolar junction transistors irradiated by 20 MeV Br ions[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2014,735: 462–465.
Li, X., Liu, C., Yang, J., & Bollmann, J.. Evolution of deep level centers in NPN transistors following 35 MeV Si ion irradiations with high fluence[J]. IEEE Transactions on Nuclear Science. 2014,61(1): 630–635.
Li, X., Liu, C., Yang, J., Zhao, Y., & Liu, G. (2014). Erratum: Separation of ionization traps in NPN transistors irradiated by lower energy electrons[J]. IEEE Transactions on Nuclear Science. 2013, 60(5):3924-3931.
Li, X. J., Lan, M. J., Liu, C. M., Yang, J. Q., Sun, Z. L., Xiao, L. Y., & He, S. Y.. The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors[J]. Wuli Xuebao/Acta Physica Sinica. 2013,62(9):1–6.
Li, X., Liu, C., Lan, M., Xiao, L., Liu, J., Ding, D., … He, S.. Equivalence of displacement radiation damage in super luminescent diodes induced by protons and heavy ions. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.2013,716:10–14.
Rui, E., Yang, J., Li, X., & Liu, C.. Change of surface morphology and structure of multi-walled carbon nanotubes film caused by proton irradiation with 170 keV[J]. Applied Surface Science. 2013,287:172–177.
Li, X., Liu, C., Yang, J., Zhao, Y., & Liu, G. Separation of ionization traps in NPN transistors irradiated by lower energy electrons. IEEE Transactions on Nuclear Science.2013,60(5):3924–3931.
Ma, G., Li, X., Liu, H., Liu, C., Jiang, Z., Yang, J., & He, S. Study on energy loss of high-energy protons in nano crystalline Ni[J]. Radiation Effects and Defects in Solids.2013,168(11–12):933–939.
Liu, C., Li, X., Geng, H., Yang, D., & He, S. Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2012,670:6–9.
Liu, C., Li, X., Geng, H., Rui, E., Guo, L., Yang, J., & Xiao, L. The equivalence of displacement damage in silicon bipolar junction transistors[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2012,677: 61–66.
Liu, C., Li, X., Geng, H., Rui, E., Yang, J., & Xiao, L. DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.2012,688:7–10.
Li, X., Liu, C., Geng, H., Rui, E., Yang, D., & He, S. Synergistic radiation effects on PNP transistors caused by protons and electrons. IEEE Transactions on Nuclear Science.2012,59(2): 439–446.
Li, X., Liu, C., Rui, E., Geng, H., & Yang, J. Simultaneous and sequential radiation effects on NPN transistors induced by protons and electrons. IEEE Transactions on Nuclear Science.2012,59(3 PART 2): 625–633.
Li, X., Xiao, J., Liu, C., Zhao, Z., Geng, H., Lan, M., … He, S. Ionization damage in NPN transistors caused by lower energy electrons. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2010,621(1–3):707–712.
Liu, C., Li, X., Geng, H., Zhao, Z., Yang, D., & He, S. Radiation effects on bipolar junction transistors induced by 25 MeV carbon ions[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2010,624(3): 671–674.
Li, X., Geng, H., Lan, M., Liu, C., Yang, D., & He, S. Radiation effects on silicon bipolar transistors caused by 3-10 MeV protons and 20-60 MeV bromine ions[J]. Physica B: Condensed Matter. 2010,405(6):1489–1494.
Li, X., Geng, H., Liu, C., Zhao, Z., Yang, D., & He, S. Combined radiation effects of protons and electrons on NPN transistors[J]. IEEE Transactions on Nuclear Science. 2010 57(2 PART 2): 831–836.
Li, X., Geng, H., Liu, C., Zhao, Z., Lan, M., Yang, D., & He, S. Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.2009,612(1): 171–175.
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