个人简介
教育背景
学士，电子科学与技术，电子科技大学 2011.09-2015.07
博士, 电子与计算机系，新加坡国立大学 2015.08-2019.07
工作经历
博士后，电子与计算机系，新加坡国立大学 2019.08-2020.10
助理教授，机械与动力工程学院，上海交通大学 2020.11-至今
软件版权登记及专利
1. U.S. Patent App. 17/521,347, "A Self-Selective Multi-Terminal Memtransistor For Crossbar Array Circuits," Xuewei Feng, Kah-Wee Ang, File Date: Nov. 8, 2021.
2. SG Patent App. 10,202,111,860W, "A Self-Selective Multi-Terminal Memtransistor For Crossbar Array Circuits," Xuewei Feng, Kah-Wee Ang, File Date: Nov. 10, 2020.
荣誉奖励
1. 上海市海外高层次人才（2021）
2. 2019 Symposium on VLSI Technology & Circuits (VLSI) Best Demo Paper Award（2019）
3. 新加坡国立大学Research Scholarship全额资助（2015-2019）
4. 电子科技大学优秀毕业生 （2015）
5. 国家励志奖学金（2014）、人民奖学金（2012、2013）
近期论文
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部分会议论文
1. X. Feng, and K.-W. Ang, "Self-selective monolayer MoS2 memtransistor crossbar array for in-memory computing applications," 2022 International Conference on Solid State Devices and Materials, Chiba, Japan, Sep. 26-29, 2022.
2. X. Feng, Y. Li, L. Wang, Z. G. Yu, S. Chen, W. C. Tan, N. Macadam, G. Hu, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "First demonstration of a fully-printed MoS2 RRAM on flexible substrate with ultra-low switching voltage and its application as electronic synapse," 2019 Symposium on VLSI Technology (VLSI), Kyoto, Japan, Jun. 9-14, 2019. (最佳展示论文奖)
3. X. Feng, X. Huang, L. Chen, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor: Impact of crystal orientation, dimension scaling and hydrogen anneal," 2018 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 9-13, 2018.
4. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Adatoms Doping Effects on the Thermal Stability of Black Phosphorus formed on High-k Gate Dielectric," Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.
5. L. Chen, D. Liang, Z. Yu, S. Li, X. Feng et al., "Ultrasensitive flexible strain sensor based on two-dimensional InSe for human motion surveillance," 65th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 7-11, 2019.
6. L. Wang, Y. Li, X. Feng et al., "A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration," 63rd IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-6, 2017.
7. Z.-P. Ling, X. Feng, H. Jiang et al., "Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectric," IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, Jun. 12-13, 2016.
一作及通讯论文
1. Y.-C. Chien#, X. Feng#, Li Chen# et al., “Charge carrier mobility and series resistance extraction in two-dimensional field-effect transistors: Towards the universal technique,” Advanced Functional Materials 31, 2105003 (2021). （共同一作) （IF=18.808）
2. X. Feng, S. Li, S. L. Wong, S. Tong, L. Chen, P. Zhang, L. Wang, X. Fong, D. Chi, and K.-W. Ang, "Self-selective multi-terminal memtransistor crossbar array for in-memory computing," ACS Nano 15(1), 1764-1774 (2021). (IF: 15.881).
3. X. Feng, X. Liu and K.-W. Ang, "2D Photonic Memristor: Progress and Prospects", Nanophotonics 9(7), 1579-1599 (2020). (IF: 9.690)
4. X. Feng, Y. Li, L. Wang, S. Chen, Z. G. Yu, W. C. Tan, N. Macadam, G. Hu, L. Huang, L. Chen, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "A fully-printed flexible MoS2 memristive artificial synapse with sub-femto joules switching energy," Advanced Electronic Materials 5, 1900740 (2019). (封面文章) （IF:7.295)
5. X. Feng, X. Huang, L. Chen, W. C. Tan, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor," Advanced Functional Materials 28, 1801524 (2018). （IF=18.808）
6. X. Feng, L. Wang, X. Huang, L. Chen, and K.-W. Ang, "Complementary black phosphorus nanoribbons field-effect transistors and circuits," IEEE Transactions on Electron Devices 65, 4122-4128 (2018). (封面文章) （IF:3.220）
7. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Anomalously enhanced thermal stability of phosphorene via metal adatoms doping: An experimental and first-principles study," Nano Research 9 (9), 2687-2695 (2016). (IF: 8.897)
部分合作发表论文
1. P. Zhang, X. Feng and X. Fong, "Impact of Trap Profile on the Characteristics of 2-D MoS2 Memtransistors: A Simulation Study," in IEEE Transactions on Electron Devices, 69(8), 4750-4756 (2022) （IF:3.220）
2. S. Li, B. Li, X. Feng et al. Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing. npj 2D Materials and Applications 5, 1 (2021). (IF=11.440)
3. Y. Li, X.Feng, M. Sivan et al., "Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration," IEEE Sensors Journal, 20, 4653-4659, 2020. (IF=3.980)
4. X. Huang, X. Feng, L. Chen et al., "Fabry-perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure," Nano Energy 62, 667-673 (2019). (IF:17.881)
5. L. Chen, S. Li, X. Feng et al., "Gigahertz integrated circuits based on complementary black phosphorus transistors," Advanced Electronic Materials 4, 1800274 (2018). (IF: 7.295)
6. X. Huang, Y. Cai, X. Feng et al., "Black phosphorus carbide as a tunable anisotropic plasmonic metasurface," ACS Photonics 5, 3116-3123 (2018). (IF:7.529)
7. L. Wang, L. Yang, X. Feng et al., "A surface potential based compact model for 2D-FETs with disorders induced transition behaviors," Journal of Applied Physics 124, 034302 (2018). (IF:2.546)
8. (Invited) W. C. Tan, L. Wang, X. Feng et al., "Recent advances in black phosphorus-based electronic devices," Advanced Electronic Materials 4, 1800666 (2018). (IF: 7.295)
9. P. Xia, X. Feng, R. J. Ng et al., "Impact and origin of interface states in MOS capacitor with monolayer MoS2 and HfO2 high-k dielectric," Scientific Reports 7, 40669 (2017). (IF:4.379)
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