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个人简介

孙兵,男,汉族,1988年06月生,山东诸城人,中共党员,博士,副教授,研究生导师。 学习及工作经历 2017.7-至今 潍坊学院物理与光电工程学院教师; 2012.9-2017.6 吉林大学超硬材料国家重点实验室凝聚态专业学习,获理学博士学位 成果 截止目前已在JPCC、JAC、 JMCA等国内外重要学术期刊以第一作者和通讯作者发表相关论文10余篇。 主持及参与项目 横向项目:单相/三相智能电表端子测温演示板、单相表电磁场传感器应用系统(40万);温差发电自取能技术及装置开发(100万) 纵向项目:Ba8MxSi46-x热电材料的高压制备与热电性质研究,潍坊市科技局。 主讲课程 《理论力学》、《热学》、《大学物理》、《电路分析》等

研究领域

热电能源转换与储能材料的物理输运研究

近期论文

查看导师最新文章 (温馨提示:请注意重名现象,建议点开原文通过作者单位确认)

1、Sun, B.*, Zhao J., Li Y., and Ma H., Effect of HPHT Processing on Structural and Thermoelectric Properties of Low-Cost Type‑I Clathrate Ba8Cu6Si40,Journal of Physical Chemistry C 2020, 124, 9082−9088. (二区) 2、Sun, B.*, Zhao J., Li Y., and Ma H., HPHT Synthesis Effects of the Synergy of Pressure Regulation and Atom Filling on the Microstructure and Thermoelectric Properties of YbxBa8−xGa16Ge30,ACS Omega 2020, 5, 11202−11209. (三区) 3、Sun, B., Jia, X., & Ma, Effects of Pressure on the Microstructure and Simultaneous Optimization of the Electrical and Thermal Transport Properties of Yb0.5Ba7.5Ga16Ge30,Inorg. Chem. 2018, 57, 3323−3328. (二区) 4、Sun, B., Jia, X., Huo D., Sun H., ... & Ma, H. Effect of high-temperature and high-pressure processing on the structure and thermoelectric properties of clathrate Ba8Ga16Ge30, Journal of Physical Chemistry C, 2016, 120, 10104-10110. (二区 ) 5、Sun, B., Jia, X., Huo D., Sun H., ... & Ma, H. Rapid synthesis and enhanced thermoelectric properties of Ba8Cu6Ge8xSi40-8x(x = 0, 1, 2, 3) alloys prepared using hightemperature, high-pressure method, Journal of Alloys and Compounds, 2016, 681, 374-378. (二区) 6、Sun, B., Jia, X., Huo D., Sun H., ... & Ma, H. Rapid synthesis and effect of high temperature and high pressure processing on the structure and thermoelectric properties of clathrate Ba8Cu6Si16Ge24, Journal of Alloys and Compounds, 2016, 658, 19-22. (IF=3.014 二区) 7、Sun, B., Jia, X., ... & Ma, H. Rapid synthesis and thermoelectric properties of clathrate Ba8Cu6Ge15Si25 by high temperature and high pressure, Modern Physics Letters B, 2016, 30, 7. (IF=0.746 四区) 8、Sun, B., Jia, X., ... & Ma, H. One-step synthesis of type-I silicon clathrate Ba8Si46 under high pressure and high temperature, Modern Physics Letters B, 2015, 29, 33. (IF=0.746 四区)

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