耿洪滨 - 哈尔滨工业大学 - 材料科学与工程学院

个人简介

耿洪滨，男，汉族，1964年生。教授、博士生导师；哈尔滨工业大学材料科学与工程学院空间环境材料行为及评价技术实验室教师。现承担《材料科学基础》和《机械工程材料》本科专业基础课程，长期从事材料与器件空间综合辐射环境损伤效应机制、多层结构单元热应力应变分布规律数值模拟研究以及大尺寸金属构件丝弧增材制造。作为主要成员，先后参与完成“空间环境材料行为与评价技术实验室”建设工作，参与完成973-61343项目、国家重点自然科学基金等项目研究工作。

研究领域

空间环境材料行为及评价技术主要研究方向: 1.材料与器件综合环境损伤机理性能退化规律及表征 2. 多层结构单元热应力应变分布数值模拟与实验验证方法 3. 大尺寸金属结构件丝弧增材制造装备与工艺

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors Liu, Chaoming; Li, Xingji; Geng, Hongbin; Yang, Dezhuang; He, Shiyu Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment v 670, p 6 Radiation-induced damage and recovery effects in GG17 glass irradiated by 1 MeV electrons Wang, Qingyan ; Zhang, Zhonghua; Geng, Hongbin; Sun, Chengyue; Yang, Dezhuang; He, Shiyu; Hu, Zhaochu Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms v 281, p 1 Synergistic radiation effects on PNP transistors caused by protons and electrons Li, Xingji; Liu, Chaoming; Geng, Hongbin; Rui, Erming; Yang, Dezhuang; He, Shiyu IEEE Transactions on Nuclear Science, v 59, n 2, The equivalence of displacement damage in silicon bipolar junction transistors Liu, Chaoming ; Li, Xingji; Geng, Hongbin; Rui, Erming; Guo, Lixin; Yang, Jianqun; Xiao, Liyi Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment v 677, p 6 Synergistic radiation effects on PNP transistors caused by protons and electrons Li, Xingji; Liu, Chaoming; Geng, Hongbin; Rui, Erming; Yang, Dezhuang; He, Shiyu IEEE Transactions on Nuclear Science v 59, n 2