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(1)Ablat Abliz*, A. Rusul*, H. Duan, A. Maimaiti, L. Yang, M. Zhang, Z. Yang Investigation of the electrical properties and stability of HfInZnO thin-film transistors, Chinese Journal of Physics (2020 Just Accepted).
(2)Ablat Abliz*, D. Wan*, H. Duana, L. Yanga, M. Mamat, H. Chen, L. Xu “Low-frequency noise in high performances and stability of Li-doped ZnO thin-film transistors”, Journal of Physics D: Applied Physics, 53 (2020) 415110.
(3)Ablat Abliz*, “Effects of hydrogen plasma treatment on the electrical performances and reliability of InGaZnO thin-film transistors ”, Journal of Alloys and Compounds, 831 (2020) 154694.
(4)Ablat Abliz, L. Xu*, D. Wan, H. Duan, J. Wang, C. Wang, S. Luo, C. Liu*, “Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors”, Applied Surface Science, 475 (2019) 565-570.
(5)Ablat Abliz*, D. Wan, L. Yang, M. Mamat, H. Chen, L. Xu, C. Wang, H. Duan*, Investigation on the electrical performances and stability of W-doped ZnO thin-film transistors, Materials Science in Semiconductor Processing, 95 (2019) 54-58.
(6)Ablat Abliz, D. Wan, J.-Y. Chen, L. Xu, J. He, Y. Yang*, H. Duan, L. Liao*,“Enhanced reliability of InGaZnO thin film transistors through design of dual passivation layer”, IEEE Trans. Electron Devices, 65 (2018) 2844-2849.
(7)Ablat Abliz, Q. Gao, D. Wan, X. Liu, L. Xu, L. Liao*, C. Liu*, C. Jiang, X. Li, H. Chen, T. Guo, “Effects of nitrogen and hydrogen co-doping on the electrical performance and reliability of InGaZnO thin film transistors”, ACS Appl. Mater. Interfaces, 9 (2017) 10798-10804.
(8)Ablat Abliz, C.-W. Huang, J. Wang, L. Xu, L. Liao*, X. Xiao, W.-W. Wu, Z. Fan, C. Jiang, J. Li, S. Guo, C. Liu, T. Guo, “Rational design of ZnO:H/ZnO bilayer structure for high performance thin film transistors”, ACS Appl. Mater. Interfaces, 8 (2016) 7862-7868.
(9)Ablat Abliz, J. Wang, L. Xu, D. Wan, L. Liao*, C. Ye, C. Liu, C. Jiang, H. Chen, T. Guo, “Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer”, Appl. Phys. Lett.,108 (2016) 213501.
(10) D. Wan, B. Jiang, H. Huang, C. Chen Ablat Abliz, L. Liao*, “High voltage gain WSe2 complementary compact inverter with buried gate for local doping ”, IEEE Electron Devices Lett., 41 (2020) 944-947.
(11) X. Guo, H. Duan B. Cao, S. Lu, M. Long, F. Chen, Ablat Abliz, Z. Wu, Q. Jing, Q. Sun, C. C. Zhang, Cd12O12 cage cluster-assembled nanowires and band gap regulation: A first-principles investigation, Physics Letters A, 384 (2020), 126463.
(12) X. Guo, H. Duan B. Cao, S. Lu, M. Long, F. Chen, Ablat Abliz, Z. Wu, Q. Jing, Z. Z. Miao, X. Chen, Adsorption of small molecules on transition metal doped rhodium clusters Rh3X (X = 3d, 4d atom): a first-principles investigation, Molecular Physics, 118 (2020) e1746424.
(13) C. Zhang, H. Duan*, X. Lv, B. Cao, Ablat Abliz, Z. Wu1, M. Long, “Static and dynamical isomerization of Cu38 cluster”, Scientific Reports, 9 (2019) 7564.
(14) L. Y. Yang*, J. R. Xie, Ablat Abliz, J. Liu, R. Wu, S. S. Tang, S. Y. Wang, L. L. Wu , Y. Y. Zhu, “Hollow paramecium-like SnO2/TiO2 heterostructure designed for sodium storage” Journal of Solid State Chemistry, 274 (2019) 176-181.
(15) G. Li, Ablat Abliz, L. Xu, N. Andre, X. Liu, Y. Zeng, D. Flandre, L. Liao*, “Understanding hydrogen and nitrogen doping on active defects in amorphous InGaZnO thin film transistors”, Appl. Phys. Lett., 112(2018) 253504.
(16) D. Wan, X. Liu, Ablat Abliz, C. Liu, Y. Yang, W. Wu, G. Li, J. Li, H. Chen, T. Guo, L. Liao*,“Design of highly stable tungsten doped IZO thin film transistors with enhanced performance”, IEEE Trans. Electron Device, 65 (2018) 1018-1023.
(17) D. Wan, Ablat Abliz, M. Su, C. Liu, C. Jiang, G. Li, H. C., T. Guo, X. Liu, L. Liao*, “Low frequency noise analyses in high mobility a-InGaZnO/InSnO nano wire composite thin film transistors”, IEEE Electron Devices Lett., 32 (2017) 1540-1542.
(18) L. Xu,C.-W. Huang, Ablat Abliz, Y. Hua, L. Liao*, W.-W. Wu, X. Xiao, C. Jiang, W. Liu, J. Li, “The different roles of contact materials between oxidation inter-layer and doping effect for high performance ZnO thin film transistors”, Appl. Phys. Lett., 106 (2015) 051607.
(19) Z. Li, L. Xu, Ablat Abliz, Y. Hua, J. Li, Y. Shi*, W. Liu, L. Liao*,“Electrical properties in group IV elements doped ZnO thin film transistors”, J. Disp. Technol., 8 (2015) 670-673.