个人简介
聚焦国家重大战略需求领域中的VLSI核心技术，专注于FPGA应用系统、集成电路设计及核心器件模型研究。近年来一直与上海集成电路研发中心(ICRD)、华力微电子、上海飞聚微电子、美国ICMD等企业合作，开展产业技术进步急需的科学技术研究。主持及参与多项国家重大科技专项、国家自然科学基金和上海市科委等各类科研项目。近两年来，关注以深度学习算法为驱动的人工智能技术，跟踪算法、FPGA硬件加速技术发展。在数字集成电路设计领域积累了丰富的经验。设计芯片（已流片）近10款，发表论文共60余篇，其中SCI论文20余篇。申请发明专利28项，其中已授权14项。
教育经历
2006-9至2009-6, 华东师范大学, 微电子学与固体电子学, 博士, 导师: 赖宗声
2001-9至2004-6, 华东师范大学, 微电子学与固体电子学, 硕士, 导师: 赖宗声
1997-9至2001-6, 华东师范大学, 微电子学与固体电子学, 学士
2008年9-10月，中国台湾国立清华大学
工作经历
2004-7至今, 华东师范大学, 助教，讲师，副教授，教授
荣誉及奖励
指导学生获奖（近年）
2019年，第二届华为杯中国研究生创“芯”大赛全国一等奖（优秀指导教师）、全国二等奖
2019年，第三届全国大学生集成电路创新创业大赛华东赛区二等奖
2018年，首届华为杯中国研究生创“芯”大赛全国二等奖
2017年，第十二届华为杯中国研究生电子设计大赛集成电路专业赛全国一等奖
近期论文
查看导师最新文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
Zhangjun Shi, Xiaojin Li*, Yabin Sun, Bo Zhang, and Yanling Shi, Co-optimization between Static and Switching Characteristics of LDMOS with LDMOS with P-type Trapezoidal Gate Embedded in Drift Region, IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4102-4108, Aug. 2022 (通讯作者)
Renhua Liu, Xiaojin Li*, Yabin Sun, and Yanling Shi, Thermal Coupling Among Channels and Its DC Modeling in Sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor, IEEE Transactions on Electron Devices, vol. 68, no. 6, pp. 2249-2254, Dec. 2021 (通讯作者)
Renhua Liu, Xiaojin Li*, Yabin Sun, and Yanling Shi, A Vertical Combo Spacer to Optimize Electrothermal Characteristics of 7-nm Nanosheet Gate-All-Around Transistor, in IEEE Transactions on Electron Devices, vol. 67, no. 6, pp. 2249-2254, June 2020 (通讯作者)
Junya Sun, Xiaojin Li*, Yabin Sun*,and Yanling Shi, Impact of Geometry, Doping, Temperature, and Boundary Conductivity on Thermal Characteristics of 14-nm Bulk and SOI FinFETs, in IEEE Transactions on Device and Materials Reliability, vol. 20, no. 1, pp. 119-127, March 2020 (通讯作者)
Xiaojin Li*, Jian Qing, Yabin Sun, Yan Zeng, and Yanling Shi, “Linear and Resolution Adjusted On-Chip Aging Detection of NBTI Degradation,” IEEE Transactions on Device & Material Reliability, vol. 18, No. 3 (2018). (第一作者)
Xiaojin Li*, Jian Qing, Yabin Sun, and Yanling Shi, “Analytical Layout Dependent NBTI Degradation Modeling Based on Non-Uniformly Distributed Interface Traps,”IEEE Transactions on Device & Material Reliability, vol. 18, No. 3 (2018). (第一作者)
Jian Qing, Yan Zeng, Xiaojin Li*, Yabin Sun, and Yanling Shi, “Analytical Low Frequency NBTI Compact Modeling with H2 Locking and Electron Fast Capture and Emission,”Journal of Electronic Testing:Theory and Applications, vol.34, No. 5, (2018) (通讯作者)
Yabin Sun, Ziyu Liu, Xiaojin Li* , Jiaqi Ren , Fanglin Zheng and Yanling Shi, “Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations,”Journal of Physics D: Applied Physics, 2018 (通讯作者)
Yan Zeng, Xiaojin Li*, Yanling Wang, Yabin Sun, Yanling Shi, Ao Guo, et.al, Analytical long-term NBTI recovery model with slowing diffusivity and locking effect of hydrogen considered, Microelectronics Reliability · June 2017 (通讯作者)
Yan Zeng, Xiaojin Li*, Yabin Sun*, Yanling Shi, Ao Guo, Shaojian Hu, Jian Qing, Detailed Study of NBTI Characterization in 40-nm CMOS Process Using Comprehensive Models, Chin. Phys. B. vol.26, No. 10 (2017) 108503 (通讯作者)
Yabin Sun, Xiaojin Li*, Jinzhong Zhang* and Yanling Shi, Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout, Chin. Phys. B Vol. 26, No. 9 (2017) 098502
Chengsheng Liu, Fanglin Zheng, Yabin Sun*, Xiaojin Li* and Yanling Shi, Highly Flexible SRAM Cells Based on Novel Tri-Independent-Gate FinFET, Superlattices and Microstructures xxx (2017) 1-8 (通讯作者)
Chengsheng Liu, Fanglin Zheng, Yabin Sun*, Xiaojin Li*, Yanling Shi, Novel tri-independent-gate FinFET for multi-current modes control, Superlattices and Microstructures Vol.109 (2017) 374-381 (通讯作者)
Fanglin Zheng, Chengsheng Liu, Jiaqi Ren, Yanling Shi, Yabin Sun, Xiaojin Li*, Analytical capacitance model for 14 nm FinFET considering dual-k spacer, Chin. Phys. B Vol. 26, No. 7 (2017) 077303 (通讯作者)
Xiaojin Li*, Jian Qing, Yanling Wang, and Yanling Shi, Prediction of NBTI degradation in dynamic voltage frequency scaling operations, IEEE Transactions on Device & Material Reliability, 2016.01.01, vol. 16, No. 1 9-19. (第一作者)
Yanling Wang, Xiaojin Li*, Jian Qing, and Yanling Shi, Analytical parameter extraction for NBTI reaction diffusion and trapping/detrapping models, Microelectronics Reliability · June 2016, 66, 10-15. (通讯作者)
Xiaojin Li*, Linhui Lai, Ao Lei, Zongsheng Lai, A direct digital frequency synthesizer based on two segment forth-order parabolic approximation, IEEE Transaction on Consumer Electronics, vol.55, No. 2, pp.322-326, May 2009 (第一作者)
Xiaojin Li*, Linhui Lai, Ao Lei, Zongsheng Lai, A Memory-Reduced direct digital frequency synthesizer for OFDM receiver systems, IEEE Transaction on Consumer Electronics, vol.54, No. 4, pp.1564-1568, Nov. 2008 (第一作者)
Xiaojin Li*, Zongsheng Lai, Jianmin Cui, A low power and small area FFT processor for OFDM demodulator, IEEE Transaction on Consumer Electronics, vol.53, No. 2, pp.322-326, May 2007 (第一作者)
Xiaojin Li*, Zongsheng Lai, A low complexity sign ML detector for symbol and frequency synchronization of OFDM systems, IEEE Transaction on Consumer Electronics, vol.52, No. 2, pp.317-320, May 2006 (第一作者)
京公网安备 11010802027423号