張廖貴術 - 台湾清华大学

研究领域

•High-k gate dielectric for VLSI device •Nonvolatile memory device (Flash) •Profiling interface trap/charge in MOS device by charge pumping analysis •Plasma processing for semiconductor device •Radiation effects and applications on semiconductor devices

近期论文

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1.Chun-Yuan Lu and Kuei-Shu Chang-Liao, 2004, “Minimized Constrains for Lateral Profiling of Hot-Carrier-Induced Oxide Charges and Interface Traps in MOSFETs”, IEEE Electron Device Letters, vol. 25(2), pp.98-100. 2.Chin-Lung Cheng, Kuei-Shu Chang-Liao, Ching-Hung Huang, and Tien-Ko Wang,, 2004, “Effects of HfOxNy Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices”, Jpn. J. Appl. Phys., Vol. 43(9A), pp.L1181-L1183. 3.Chin-Lung Cheng, Kuei-Shu Chang-Liao, Ching-Hung Huang, and Tien-Ko Wang, 2004, “Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices”, Applied Physics Letters, vol.85(20), pp.4723-4725. 4.Chin-Lung Cheng, Kuei-Shu Chang-Liao, Tien-Ko Wang, 2005, “Comparison on the effects of defects at Si(111) and Si(100) surface on electrical characteristics of MOS devices with HfOxNy gate dielectric”, Microelectronic Engineering, Vol. 80, p.214-217. 5.Chin-Lung Cheng, Kuei-Shu Chang-Liao, Ching-Hung Huang, and Tien-Ko Wang, 2005, “Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices”, Applied Physics Letters, Vol. 86(21), p.212902. 6.Chin-Lung Cheng, Chun-Yuan Lu, Kuei-Shu Chang-Liao, Ching-Hung Huang, Sheng-Hung Wang, and Tien-Ko Wang, 2005, “Effects of Interstitial Oxygen Defects at HfOxNy/Si Interface on Electrical Characteristics of MOS Devices”, to be published in IEEE Trans. on Electron Devices.