古慶順 - 台湾清华大学

个人简介

學歷： • 國立交通大學電子物理所博士(2007) • 國立交通大學電子物理所碩士(2000) •東海大學物理系學士 (1999) 經歷： •國家同步輻射研究中心博士後研究員 (2007-2010) •國家同步輻射研究中心助研究員 (2011~2016) •國家同步輻射研究中心副研究員 (2017~) 負責實驗站： •台灣光子源次微米繞射實驗站

研究领域

•Oxide-based II-VI & III-V compounds growth by Atomic Layer Deposition (ALD) •Structural and optical properties characterization of thin films by x-ray scattering •In-situ X-ray scattering

近期论文

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•Y. T. Liu, C. S. Ku, S. J. Chiu, H. Y. Lee, and S. Y. Chen, "Ultrathin Oriented BiFeO3 Films from Atomic Layer Deposition with Greatly Improved Leakage and Ferroelectric Properties", Appl. Mater. Interfaces, 6, 443 (2014). •C. Y. Kuo, M. S. Su, G. Y. Chen, C. S. Ku, H. Y. Lee and K. H. Wei, “Annealing treatment improves the morphology and performance of photovoltaic devices prepared from thieno[3,4-c]pyrrole-4,6-dione-based donor/acceptor conjugated polymers and CdSe nanostructures”, Energy Environ. Sci. 4, 2316 (2011). •C. Y. Kuo, M. S. Su, C. S. Ku, S. M. Wang, H. Y. Lee and K. H. Wei, “Ligands affect the crystal structure and photovoltaic performance of thin films of PbSe quantum dots”, J. Mater. Chem. (2011) DOI:10.1039/c0jm04417b. •C. S. Ku, J. M. Huang, C. Y. Cheng, C. M. Lin and H. Y. Lee, “Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction growth by atomic-layer deposition”, Appl. Phys. Lett. 97, 181915 (2010). •C. S. Ku, H. Y. Lee, J. M. Huang and C. M. Lin, “Epitaxial growth of m-plane ZnO thin films on (1010) sapphire substrate by atomic layer deposition with interrupted flow”, Cryst. Growth Des. 10, 1460 (2010). •C. S. Ku, H. Y. Lee, J. M. Huang and C. M. Lin, “Epitaxial growth of ZnO films at extremely low-temperature by atomic layer deposition with interrupted flow”, Mater. Chem. Phys. 120, 236 (2010). •C. S. Tu, S. H. Huang, C. S. Ku, H. Y. Lee, R. R. Chien, V. H. Schmidt and H. Luo, “Phase coexistence and Mn-doping effect in lead-free ferroelectric (Na1/2Bi1/2)TiO3 crystals”, Appl. Phys. Lett. 96, 062903 (2010). •C. S. Ku, J. M. Huang, C. M. Lin, and H. Y. Lee, “Fabrication of epitaxial ZnO films by atomic layer deposition with interrupted flow”, Thin Solid Films 518, 1373 (2009). •C. S. Ku, W. C. Chou and M. C. Lee, Optical investigations of InN nanodots capped by GaN at different temperatures, Appl. Phys. Lett. 90 (13), 132116 (2007).