徐嘉鴻 - 台湾清华大学

个人简介

學歷： • 1982 國立台灣師範大學物理系學士 •1986 美國加州大學洛杉磯分校物理系碩士 •1992 美國波士頓大學物理系博士經歷： •2015/3-2019/4國家同步輻射研究中心主任秘書 •2012-迄今國立清華大學先進光源學程合聘教授 •2012-迄今國立中山大學加速器光源及中子束應用博士學位學程合聘研究員 •2010-迄今國立交通大學光電工程研究所合聘教授 •2010 - 2011國家同步輻射研究中心科學研究組組長 •2009-迄今國家同步輻射研究中心研究員 •2008-2009 國立交通大學光電工程研究所合聘副教授 •1993-2008 國家同步輻射研究中心副研究員 •1992-1993哈佛大學應用科學組博士後研究負責實驗站： •X光實驗室6環繞射儀

研究领域

• 個人的研究主要為各種薄膜及磊晶奈米材料的結構和生長機制的研究，主要的研究工具為同步輻射X光散射，並搭配其他物性量測技術，研究課題包括: 1. 金屬氧化物磊晶薄膜的晶體結構與介面原子排列的研究，藉此驗證介面化學及薄膜磊晶生長機制的理論以及原子結構對高介電閘極氧化物以及鐵電薄膜電性的影響。 2. 利用不同的鍍膜技術生長以氧化鋅為基礎的各種磊晶薄膜及量子阱系統並研究其應力分佈、進行結構缺陷分析及結構特徵對其光電特性的影響。 3. 各種新穎薄膜材料的原子結構研究及同步輻射結構分析實驗技術的發展等。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

•Lawrence Boyu Young, Chao-Kai Cheng, Keng-Yung Lin, Yen-Hsun Lin, Hsien-Wen Wan, Ren-Fong Cai, Shen-Chuan Lo, Mei-Yi Li, Chia-Hung Hsu*, Jueinai Kwo*, and Minghwei Hong*, "Epitaxy of high-quality single-crystal hexagonal perovskite YAlO3 on GaAs(111)A using laminated atomic layer deposition", Cryst. Growth & Design 19, 2030 (2019). •C. K. Cheng, L. B. Young, K. Y. Lin, Y. H. Lin, H. W. Wan, G. J. Lu, M. T. Chang, R. F. Cai, S. C. Lo, M. Y. Li, C. H. Hsu*, J. Kwo*, and M. Hong*, "Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition", Microelectronic Engineering 178, 125 (2017). •Y. H. Lin, C. K. Cheng, K. H. Chen, C. H. Fu, T.W. Chang, C. H. Hsu*, J. Kwo*, and M. Hong*, "Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition", Materials 8, 7084 (2015). •Y. C. Liu, Y. W. Chen, S. C. Tseng, M. T. Chang, S. C. Lo, Y. H. Lin, C. K. Cheng, H. Y. Hung, C. H. Hsu*, J. Kwo*, and M. Hong*, "Epitaxial ferromagnetic Fe3Si on GaAs(111)A with atomically smooth surface and interface", Appl. Phys. Lett. 107, 122402 (2015). •Wei-Rein Liu*, Bi-Hsuan Lin, Chi-Yuan Lin, Song Yang, Chin-Chia Kuo, Forest Shih-Sen Chien, Chen-Shiung Chang, Chia-Hung Hsu*, Wen-Feng Hsieh, "The effect of thermal annealing on the optical and electrical properties of ZnO epitaxial films grown on n-GaAs(001)", RSC Advances 5, 12358 (2015). •Wen Hsin Chang, Shao Yun Wu, Chih Hsun Lee, Te Yang Lai, Y. J. Lee, Pen Chang, Chia-Hung Hsu*, Tsang Shiou Huang, J. Kwo, and Minghwei Hong*, "Phase transformation of molecular beam epitaxy-grown nm thick Gd2O3 and Y2O3 on GaN", ACS Appl. Mater. Inter. 5, 1436 (2013). • B. H. Lin, W.-R. Liu, C. Y. Lin, S. T. Hsu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, F. S.-S. Chien, C. S. Chang, "Single domain m-plane ZnO grown on m-plane sapphire by radio-frequency magnetron sputtering", ACS Appl. Mater. Inter. 4, 5333 (2012). (2011 IF = 4.525) • W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu,* W. F. Hsieh,* W. C. Lee, M. Hong, and J. Kwo, ”The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a -Al2O3 buffer layer”, CrystEngComm 14, 1665 (2012).(2011 IF =3.842) • B. H. Lin, W.-R. Liu, S. Yang, C. C. Kuo, C.-H. Hsu*, W. F. Hsieh*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, "The growth of epitaxial ZnO film on Si(111) with Gd2O3(Ga2O3) buffer layer", Cryst. Growth & Design 11, 2846 (2011). (2010 IF = 4.389) • S. Yang, B. H. Lin, W.-R. Liu, J.-H. Lin, C.-S. Chang, C.-H. Hsu*, and W.F. Hsieh*, "Structural characteristics and annealing effect of ZnO epitaxial films grown by atomic layer deposition", Cryst. Growth Des. 9, 5184 (2009). (2008 IF = 4.215) • Wen Hsin Chang, Chih Hsun Lee, Yao Chung Chang, Pen Chang, Mao Lin Huang, Yi Jun Lee, Chia-Hung Hsu*, J. Minghuang Hong, Chiung Chi Tsai, Jueinai Kwo* and Minghwei Hong*, "Nano-meter thick single crystal hexagonal Gd2O3 on GaN for advanced complementary metal-oxide-semiconductor technology", Adv. Mater. 21, 4970 (2009). (2008 IF = 8.191) • C. C. Kuo, W.-R. Liu, W. F. Hsieh*, C.-H. Hsu*, H. C. Hsu, and L. C. Chen, "Crystal symmetry breaking of wurtzite to orthorhombic in nonpolar a-ZnO epi-films", Appl. Phys. Lett. 95, 11905 (2009). (2008 IF = 3.726) • W.-R. Liu, Y.-H. Li, W. F. Hsieh*, C.-H. Hsu*, W. C. Lee, Y. J. Lee, M. Hong, and J. Kwo, "Domain matching epitaxial growth of high-quality ZnO film using a Y2O3 buffer layer on Si (111)", Cryst. Growth Des. 9, 239 (2009). (2008 IF = 4.215) • C. W. Nieh, Y. J. Lee, W. C. Lee, Z. K. Yang, A. R. Kortan, M. Hong*, J. Kwo, and C.-H. Hsu*, "Nano-meter thick single crystal Y2O3 films epitaxially grown on Si (111) with structures approaching perfection", Appl. Phys. Lett. 92, 61914 (2008). (2010 IF = 3.82) • Z. K. Yang, W. C., Lee Y. J. Lee, P. Chang, M. L. Huang, M. Hong, K. L. Yu, M.-T. Tang, B.-H. Lin, C.-H. Hsu*, and J. Kwo*, "Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)", Appl. Phys. Lett. 91, 202909 (2007). (2010 IF = 3.82) •C.-H. Hsu*, Mau-Tsu Tang, Hsin-Yi Lee, Chih-Mon Huang, K. S. Liang, S. D. Lin, Z. C. Lin, C. P. Lee, "Composition Determination of Semiconductor Quantum Wires by X-ray Scattering", Physica B 357, 6 (2005). (2010 IF = 1.909)