郭瑞年 - 台湾清华大学

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郭瑞年教授收藏完善纠错
台湾清华大学理学院
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个人简介

學歷 •美國史丹福大學應用物理系博士 (1977-1981) •美國史丹福大學應用物理系碩士 (1975-1977) •國立台灣大學物理系學士 (1971-1975) 現職與經歷　　現職： •國立清華大學特聘講座教授 ( 2008/08- ) •國立清華大學物理系教授 (2003/06- ) 　　經歷： •國立清華大學研發長 (2016/08-2017/03) •國立清華大學產學營運總中心主任 (2016/08–2017/03) •國際物理與物理聯盟副總裁暨C10委員會主席 (2015/01-2017/12) •國家實驗研究院董事 (2015-2017) •國立臺灣大學凝態科學研究中心主任 (借調, 2010/01-2012/07) •國立清華大學基礎科學研究中心主任 (2008/08-2009/12) •中華民國物理學會理事長(2008/01-2009/12) •國立清華大學物理系主任 (2005/08-2008/07 ) •國立清華大學自然科學講座教授 (2004/08-2008/07) •工業技術研究院(ITRI)資深顧問 (2003/06-2005/05 ) •美國貝爾實驗室Agere微電子部門特聘研究員 (2000/07–2003/05) •美國貝爾實驗室基礎物理部門研究員 (1981/06–2000/06) 榮譽與獎項 •台灣磁性技術協會(TAMT) 磁性技術獎章(2018) •2017年亞太材料學院院士 (5/2017-迄今) •第20屆國家講座主持人獎 (12/2016) •台灣第八屆傑出女性科學家獎 (3/2015) •Elected among Top 100 Women Worldwide with profiles in a book entitled as “Inspirational Profiles of Successful Women: Ceramic and Glass Scientists and Engineers”, publisher by John Wiley & Sons, Inc, (2015). •臺灣大學物理系2104年傑出系友 (12/2014–迄今) •美國物理學會會士(11/2009–now) •國立清華大學特聘講座教授 (8/2008–迄今) •國立臺灣大學講座教授 (1/2010–7/2012, 借調期間) •國立臺灣大學特聘教授 (1/2010–7/2012, 借調期間) •中華民國物理學會會士(1/2005–迄今) •國立清華大學自然科學講座(8/2004–7/2008) •傑出人才講座 (2/2004–2/2009) •國立清華大學台積電講座 (8/2003–1/2004) •2001 Distinguished Member of Technical Staff (DMTS) Award for seminal research achievements by Research, Agere Systems, formerly Bell Laboratories. The citation reads:“In recognition of her outstanding technical contributions and for her consistent performance,thought leadership,and positive impact to the business.” •746 th among the ISI's 1120 Most Cited Physicists (1981–1997) ranked by total citations in physics, astrophysics, materials science,chemical physics, and the related fields. •CEEE Outstanding Paper Award, Center of Electronics and Electrical Engineering, National Institute of Standards and Technology,1989. 研究興趣與成果　　Updated on October 6, 2016 　　我的研究工作主要是以先進薄膜製成技術，開拓新穎材料，以探討其嶄新物理性質。　　過去在美國貝爾實驗室從事基礎研究逾二十二年，早期(1981-86年)代表作是以發明金屬原子分子磊晶術而首次於磁性超結晶格中發現磁性之「調控效應」，進而首創「磁電子學」之觀念。在1987-1992年中，因為發明氧化物原子分子磊晶術，而成功製造單晶高溫超導薄膜以研究其超導異向性及其基本機制。　　在1993後，致力於研究新穎高介電質材料薄膜為未來奈米電子與奈米光電之應用，其中最大貢獻是發現鎵釓氧化混合物首次製成了三五半導體之場電效應電晶體。此外，同時進行之尖端研究是「自旋電子學」，包括探討稀釋磁氧化物薄膜之磁性、自旋磁化分析、自旋注入，以及發展自旋場電效應電晶體等。　　現今的研究拓展到新類量子物質拓樸絕緣體(TI)，主要基於其特殊物性及未來在低損耗電子元件和量子計算的應用。利用自旋泵和自旋力矩轉移鐵磁共振效應來研究磁性絕緣體與拓樸絕緣體,和磁性金屬與拓樸絕緣體的異質結構。使用高介電質閘極場效元件直接操控拓樸絕緣體的自旋-動量耦合特性，期望實現全電驅動自旋電子學。　B. Review Articles: 1."Tunneling into the Al5 Compounds”, J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982). 2. "Synthesis of Rare Earth Films and Superlattices”, J. Kwo, in Thin Film Techniques for Low Dimensional Structures", Edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, N. H. Neave and A. S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum Publisher Corporation (1987). 3."Properties of In-situ Superconducting YBa2Cu3O7-x Films By Molecular Beam Epitaxy with an Activated Oxygen Source”, J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 101, (1989). 4."Tl-Based Superconducting Films By Sputtering Using a Single Target”, S. H. Liou, M. Hong, A. R. Kortan, J. Kwo, D. D. Bacon, C. H. Chen, R. C. Farrow, and G. S. Grader, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 229, (1989). 5."Magnetic Rare Earth Superlattices”, C. F. Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L. Chien and J. Bohr, Journal of Advances in Physics, 40, 99-189, (1991). 6."Growth and Properties of High Tc Films in YBa2Cu3O7-x Perovskite by Molecular Beam Epitaxy”, J. Kwo, in Journal of Crystal Growth, 111, 965, (1991). 7. "Charge Dynamics in Metallic CuO2 Layers”, B. Batlogg, H. Takagi, H. L. Kao, andJ. Kwo, in Electronic Properties of High Tc Superconductors, The Normal and Superconducting State, Ed. H. Kuzmany et al, Springer Series in Solid-State Sciences, 113, Springer-Verlog, Berlin, Heidelberg (1993). 8."Semiconductor-Insulator Interfaces”, M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering”, 19, p. 87-100, Ed. by J. G. Webster, Published by John Wiley & Sons, New York, (1999). 9."Materials Characterization of Alternative Gate Dielectrics”, B. W. Busch, O. Pluchery, Y. J. Chabal, D.A. Muller, R. L. Opila, J. Kwo, and E. Garfunkel, Materials Research Bulletin, March 2002, on "Alternative Gate Dielectrics for Microelectronics”, Ed. By G. Wilk, and R. Wallace. 10."High κ Gate Dielectrics for Si and Compound Semiconductors by MBE”, J. Kwo and M. Hong, Conf. Proc. MRS Fall Meeting, Dec. 2-6, 2002, Boston, MA. 11."High-quality thin single crystal γ-Al2O3 films grown on Si (111)”, S. Y. Wu, M. Hong, A. R. Kortan, J. Kwo, "Tailoring Oxide-Semiconductor Interfaces – an enabling sub-nano approach for new science and next-generation high speed and high power devices” (氧化物-半導體界面控制–次奈米尺寸新興科學解決方案及次世代高速操作高功率元件), in Taiwan Nanotechnology (台灣奈米科技–從 2004 到嚮往的大未來), published by Nano-technology center of Industrial Technology Research Institute, Hsin Chu, Taiwan, 2004. 12."原子尺寸下氧化物與半導體界面的剪裁控制: 一個在次奈米尺寸底下新穎科學的發現及對次世代高功能元件製造的解決方案”,洪銘輝和郭瑞年,國立清華大學； "Tailoring Oxide-Semiconductor Interfaces – an Enabling Sub-nano Approach for New Science and Advanced Devices”, M. Hong and J. Kwo, to appear in the Electronics Spectrum, the News Lettter of Electron Devices and Materials Association, Taiwain, Ed. Y. H. Wang, vol 10, no. 2, Dec. 2004. 13."Structure, Composition and Order at Interfaces of Crystalline Oxides and Other Highk Materials on Si ”, T. Gustafsson, R. Garfunkel, L. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Fordan, D. G. Sholom, V. Vaithyanathan, M. Hong, and J. Kwo, in "Defects in Advanced High k Dielectric Nano-electronic Semiconductor Device”, Ed. E. P. Gusev, Springer, Netherlands, (2005). 14."High k Gate Dielectrics for Compound Semiconductors, by J. Kwo and M. Hong , chapter 10th in "Advanced Gate Stacks on High-Mobility Semiconductors”, edited by A. Dimoulas, E. P. Gusev, P. McIntyre, M. Heyns, Springer publishing company in the Springer Series Materials Science, (2006). 15."InGaAs, Ge, and GaN Metal-Oxide-Semiconductor Devices with High k Dielectrics for Science and Technology beyond Si CMOS”, M. Hong, J. Kwo, T. D. Lin, M. L. Huang, W. C. Lee, and P. Chang, a book chapter on "High Mobility Channel Semiconductor MOSFET”, Springer Publisher, (2009). 　C. 專利 (1981-2009): 1. J. Kwo, by G. E. Books (issued 1995) "Methods for Low temperature Growth of Epitaxial Silicon and Devices Produced Thereby”. 2.Cava, Kwo, and Thomas, by G. E. Books (issued 1996) "Methods for Growing transparent Conducting GaInO3 Films by Sputtering” 3.Carter, Cava, Kwo, Phillips, Thomas, by G. E. Books (issued on 5/13/1997) "Transparent Conductors Comprising Zinc-Indium-Oxide and Methods for Making Films”. 4.Hong 10-7-3-3-15-41, by J. A. Garceran (issued on 10/13/1998) "Article Comprising A Gallium Oxide Layer On A GaAs-Based Semiconductor, And Method of Making the Article”. 5.Cava, Hou, Kwo, Seelig, Watts, by G. E. Books (issued on 9/7/1999) "Methods for Making Thin Film Tantalum Oxide Layers with Enhanced Dielectric Properties and Capacitors Employing Such Layers”. 6.Hong-Kwo-Murphy, by E. E. Pacher (issued on 10/5/1999) "Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body, And Method of Making the Article”. 7.Hong-Kuo-Kwo-Mannaerts-Wang, by E. E. Packer (issued 1999) "Method of Making an Article Comprising an Oxide Layer on A GaAs-Based Semiconductor Body”. 8.Chen-Cho-Hobson-Hong-Kuo-Kwo-Murphy-Ren, by E. E. Pacher (issued 2000) "Method of Making An article Comprising an Oxide Layer on a GaAs-Based Semiconductor”. 9.Y. K. Chen, A. Y. Cho, W. S. Hobson, M. Hong, J. M. Kuo, J. R. Kwo, D. W. Murphy, and F. Ren, (issued 8/7/2001), "Method of Making An Article Comprising An Oxide Layer On A GaAs-Based Semiconductor Body”, U.S. Patent Number 6271069. 10.Hong-Kortan-Kwo-Mannaerts by W. Koba (issued 6/11/2001), "Si-Bases Field Effect Device with High Dielectric Constant Gate Dielectric”. M. Hong, A. R. Kortan, J. R. Kwo, and J. P. Mannaerts, "High dielectric constant gate oxides for Silicon-based devices”, U.S. Patent Number 6404027. 11.Hong 19-10-16-6 by E E Pacher (issued 10/22/2002), "Article Comprising An Oxide Layer On A GaAs or GaN-Based Semiconductor Body”, U.S. Patent Number 6469357. 12. M. Hong, J. M. Kuo, J. Kwo, J. P. Mannaerts, and Y. C. Wang (issued 12/17/2002), "Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, U.S. Patent Number 6495407. 13.Fleming-Kleiman-Kwo-Osenbach-Thomas by G. E. Books (issued 11/12/2002), "Improved Electro-Optic Device Including a Buffer Layer of Transparent Conducting Material”, U.S. Patent Number 6480633. 14. 洪銘輝、郭瑞年、陳治平、張翔筆、李威縉, "具有單晶氧化鈧接面膜的磊晶用基板之製作方法”, (中華民國 issued 7/2005), No 94123194/NP-19030. 15.洪銘輝、郭瑞年等, "三-五族金屬氧化物半導體元件製程改進”, 中華民國 and US, pending, 2005. 16.郭瑞年、洪銘輝、吳彥達、李威縉、張翔筆、李昆育、李毅君, "形成金氧半電晶體元件用之基板的製作方法及其製品”, (中華民國 issued 11/24/2006), No 94141352; US Pending. 17.M. Hong, J. Kwo, C. P. Chen, S. P. Chang, and W. C. Lee, "Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrate”, (US patent issued 6/26/2007), No US7235467 B2.

研究领域

1.Quantum materials thin films by advanced molecular beam epitaxy 2.Spintronics 3.Gate dielectrics for Si and III-V semiconductors 4.High temperature superconducting films 5.Magnetic superlattices and heterostructures

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A. Refereed Papers: 1."Nb3Al Thin-Film Synthesis by Electron-Beam Coevaporation", J. Kwo, R. H. Hammond, and T. H. Geballe, J. Appl. Phys., 51, 172, (1980). 2."Superconducting Tunneling into Al5 Nb3Al Thin Films", J. Kwo and T. H. Geballe, Phys. Rev. B23, 3230 (1981). 3."Microscopic Parameters of Al5 Nb3 Al, How Important is the Band Density of States?", J. Kwo, T. P. Orlando and M. R. Beasley, Phys. Rev. B24, 2506 (1981). 4."Stabilization and Strong Coupling Properties of High Transition Temperature Superconductors", T. H. Geballe, R. H. Hammond and J. Kwo, in "Synthesis and Properties of Metastable Phases”, ed. E. S. Machlin and T. J. Rowland, p. 67, (1981). 5."CW Laser Annealing of Nb3Al and Nb3Si", T. Shibata, J. F. Gibbons, J. Kwo, R. D. Feldman and T. H. Geballe, J. Appl. Phys. 52, 1537 (1981). 6."The Role of Disorder in Maximizing the Upper Critical Fields in the Nb-Sn System", T. P. Orlando, J. A. Alexander, S. J. Bending, J. Kwo, S. J. Poon, R. H. Hammond, M. R. Beasley, E. J. McNiff, Jr., and S. Foner, IEEE Trans. Mag. MAG-17, 368 (1981). 7."Tunneling into the Al5 Compounds", J. Kwo and T. H. Geballe, Physica 109 & 110B, 1665 (1982). 8."XPS Study of Surface Oxidation of Nb/Al Overlayer Structures", J. Kwo, G. K. Wertheim, M. Gurvitch and D. N. E. Buchanan, Appl. Phys. Lett. 40, 675 (1982). 9."XPS and Tunneling Study of Air-Oxidized Overlayer Structures of Nb with Thin Mg, Y and Er", J. Kwo, G. K. Wertheim, M. Gurvitch and D. N. E. Buchanan, IEEE Trans. Mag. MAG-19, 791 (1983). 10."Tunneling and Surface Properties of Oxidized Thin Metal Overlayers on Nb", M. Gurvitch and J. Kwo, Advances in Cryogenic Engineering, 30, 509 (1984). 11."XPS Study of Bonding in Ligated Au Clusters", G. K. Wertheim, J. Kwo, B. K. Teo, and K. A. Keating, Sol. State Commun., 55, 357 (1985). 12."Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy", J. Kwo, D. B. McWhan, M. Hong, E. M. Gyorgy, L. C. Feldmann, and J. E. Cunningham, in"Layered Structures, Epitaxy and Interfaces”, Materials Research Society, eds. Gibson, and Dawson, 37, 509 (1985). 13."Properties of Rare-Earth Metal Superlattices Grown by Molecular Beam Epitaxy", J. Kwo, E. M. Gyorgy, M. Hong, W. P. Lowe, D. B. McWhan and R. Superfine, J. Appl. Phys. 57, 3672 (1985). 14."Magnetic and Structural Properties of Single Crystal Rare-Earth Gd/Y Superlattices", J. Kwo, E. M. Gyorgy, D. B. McWhan, M. Hong, F. J. Di Salvo, C. Vettier and J. E. Bower, Phys. Rev. Lett. 55, 1402 (1985). 15."Magnetic Properties of Single Crystal Rare Earth Gd-Y Superlattices", J. Kwo, E. M. Gyorgy, F. J. Di Salvo, M. Hong, Y. Yafet and D. B. McWhan, J. Magnetism and Magnetic Materials, 54-57, 771, (1986). 16."Magnetic X-ray Scattering Study of Interfacial Magnetism in a Gd-Y Superlattice", C. Vettier, D. B. McMhan, E. M. Gyorgy, J. Kwo, B. M. Buntschuh and B. W. Batterman, Phys. Rev. Lett. 56, 757, (1986). 17."Magnetic X-ray Scattering From Superlattices", D. B. McWhan, C. Vettier, E. M. Gyorgy, J. Kwo, B. Buntschuh and B. Batterman, J. Magnetism and Magnetic Materials, 54-57, 7751, (1986). 18."Structural and Magnetic Properties of Single Crystal Rare-Earth Gd/Y Superlattices", J. Kwo, D. B. McWhan, F. J. Di Salvo, E. M. Gyorgy, and M. Hong, in "Layered Structures and Epitaxy”, Materials Research Society, eds. Gibson, Osbourn, and Tromp, 56, 211, (1986). 19."Growth of Rare Earth Single Crystals by MBE: An Epitaxial Relationship Between hcp Rare Earth and bcc Nb", J. Kwo, M. Hong and D. B. McWhan, Appl. Phys. Lett. 49, 319, (1986). 20."Dipole-Dipole Interactions and 2-dimensional Ferromagnetism", Y. Yafet, J. Kwo and E. M. Gyorgy, Phys. Rev., Brief Report, 33, 6519, (1986). 21."Observation of a Magnetic Antiphase Domain Structure with Long-Range Order in a Synthetic Gd-Y Superlattice", C. F. Majkrzak, J. W. Cable, J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, J. V. Waszczak, and C. Vettier, Phys. Rev. Lett. 56, 2700, (1986). 22."Synthesis of Rare Earth Films and Superlattices" J. Kwo, in "Thin Film Techniques for Low Dimensional Structures", Edited by R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, N. H. Neave and A. S. Arrott, NATO ASI Series B, Physics 13, p. 337, Plenum Publisher Corporation (1987). 23."Polarized Neutron Diffraction Studies of Gd-Y Synthetic Superlattices", C. F. Majkrzak, J. W. Cable, J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, J. V. Waszczak, H. Grimm, and C. Vettier, J. Appl. Phys. 61, 4055, (1987). 24."Synthetic Magnetic Rare-Earth Dy-Y Superlattices", M. Hong, R. M. Fleming, J. Kwo, L. F. Schneemeyer, J. V. Waszczak, J. P. Mannaerts, C. F. Majkrzak, D. Gibbs, and J. Bohr, J. Appl. Phys. 61, 4052, (1987). 25."Modulated Magnetic Properties in Synthetic Rare Earth Gd-Y Superlattices", J. Kwo, M. Hong, F. J. Di Salvo, J. V. Waszczak, C. F. Majkrzak, Phys. Rev. B. Rapid Comm. 35, 7925, (1987). 26."Antiphase Domain Boundaries in the Superconducting Phase of Y-Ba-Cu-O System", C. H. Chen, D. J. Werder, S. H. Liou, J. Kwo, and M. Hong, Phys. Rev. B35, 8767, (1987). 27."Break-Junction Tunneling Measurements of the High Tc Superconductor YBa2Cu3O9-δ ”, J. Moreland, J. W. Ekin, L. F. Goodrich, T. E. Capobianco, A. F. Clark, J. Kwo, M. Hong, and S. H. Liou, Phys. Rev. B35, 8856 (1987). 28."Transport Critical-Current Characteristics of YBa2Cu3O7-x ”, J. W. Ekin, A. J. Panson, A. I. Braginski, M. A. Janocko, M. Hong, J. Kwo, S. H. Liou, D. W. Capone, II, and B. Flandermeyer, in "High Temperature Superconductors”, Materials Research Society , Eds. D. V. Gubser and M. Schluter, EA-11, p. 223, (1987). 29."Superconducting Y-Ba-Cu-O Oxide Films by Sputtering", M. Hong, S. H. Liou, J. Kwo, and B. A. Davidson, Appl. Phys. Lett. 51, 694 (1987). 30."Single Crystal Superconducting YBa2Cu3O7-x Oxide Films by Molecular Bean Epitaxy", J. Kwo, M. Hong, R. M. Fleming, T. C. Hsieh, S. Liou, and B. A. Davidson, Conf. Proc. of International Workshop on "Novel Mechanism of Superconductivity", Plenum Press, New York, 1987, p. 699. 31."Structural and Superconducting Properties of Orientation-ordered YBa2Cu3O7-x Films Prepared by Molecular Beam Epitaxy", J. Kwo, T. C. Hsieh, R. M. Fleming, M. Hong, S. H. Liou, B. A. Davidson, L. C. Feldman, Phys. Rev. B56, 4039 (1987). 32."Evidence for Weak Link and Anisotropy Limitations on the Transport Critical Current in Bulk Polycrystalline YBa2Cu3O7-x , J. W. Ekin, A. I. Braginski, A. J. Panson, M. A. Janocko, D. W. Capone II, N. J. Zaluzec, B. Flandermeyer, O. F. de Lima, M. Hong, J. Kwo and S. H. Liou, J. Appl. Phys.62, 4821 (1987). 33."Raman Detection of Superconducting Gap in Ba-Y-Cu-O Superconductor", K. B. Lyons, S. H. Liou, M. Hong, H. S. Chen, J. Kwo and T. J. Negron, Phys. Rev. B36, 5592 (1987). 34."Low Magnetic Field Superconducting Phase Diagram of the High TcYBa2Cu3O9-δ", J. E. Drumheller, G. V. Rubenacker, W. K. Ford, J. Anderson, M. Hong, S. H. Liou, J. Kwo and C. T. Chen, Solid State Comm. 64, 509 (1987). 35."Observation of Hexagonally Ordered Flux Quanta in YBa2Cu3O7-x ", P. L. Gammel, D. J. Bishop, G. J. Dolan, J. Kwo, C. A. Murray, L. F. Schneemeyer and J. V. Waszczak, Phys. Rev. Lett. 59, 2592 (1987). 36."A Versatile Metallo-Organic Process for Preparing Superconducting Thin Films", M. E. Gross, M. Hong, S. H. Liou, P. K. Gallagher and J. Kwo, Appl. Phys. Lett. 52, 160 (1988). 37."Oxygen Defect in YBa2Cu3Ox: An X-Ray Photoemission Approach", W. K. Ford, C. T. Chen, J. Anderson, J. Kwo, S. H. Liou, M. Hong, G. V. Rubenacker and J. E. Drumheller, Phys. Rev. B, Rapid Comm. 37, 7924 (1988). 38."Epitaxial Films of High Tc Oxide Superconductor YBa2Cu3O7 Grown on SrTiO3 by Molecular Beam Epitaxy", J. Kwo, T. C. Hsieh, M. Hong, R. M. Fleming, S. H. Liou, B. A. Davidson and L. C. Feldman, Proc. of Materials Research Society, 99, 339 (1988). 39."Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBa2Cu3O7-δ", A. E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankiewich, W. I. Skocpol, R. E. Howard, M. Anslowar, K. W. Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh and M. Hong, Phys. Rev. B, Rapid Comm.37, 3755 (1988). 40."Ion-Beam-Induced Destruction of Superconducting Phase Coherence in YBa2Cu3O7-δ", A. E. White, K. T. Short, D. C. Jacobson, J. M. Poate, R. C. Dynes, P. M. Mankiewich, W. J. Skocpol, R. E. Howard, M. Anslowar, K. W. Baldwin, A. F. J. Levi, J. Kwo, T. C. Hsieh and M. Hong, Proc. of Materials Research Society, 99, 531 (1988). 41."Observation of Hexagonally Ordered Flux Quanta in YBa2Cu3O7-δ”, P. L. Gammel, D. J. Bishop, G. J. Dolan, J. Kwo, C. A. Murray, L. F. Schneemeyer and J. V. Waszczak, Proc. of Materials. Research Society Fall Meeting, Boston, 99, (1988). 42."Magnetic Rare Earth Superlattices", C. F. Majkrzak, D. Gibbs, P. Boni, A. I. Goldman, J. Kwo, M. Hong, T. C. Hsieh, R. M. Fleming, D. B. McWhan, Y. Yafet, J. W. Cable, J. Bohr, H. Grimm and C. L. Chien, Proc. of the 23rd Annual Conf. on Magnetism & Magnetic Materials, J Appl. Phys. 63, 3447 (1988). 43."Interlayer Exchange in Magnetic Superlattices", Y. Yafet, J. Kwo, M. Hong and C. F. Majkrzak, J. Appl. Phys. 63, 3453 (1988). 44."Electronic Excitations of YBa2Cu3O7-x Superconductor: a Study by Transmission Electron Energy Loss Spectroscopy with an Electron Microprobe", C. H. Chen, L. F. Schneemeyer, S. H. Liou, M. Hong, J. Kwo and H. S. Chen, Phys. Rev. B, Rapid Commun. 37, 9780 (1988). 45."Microstructure of YBa2Cu3O7-x Superconducting Thin Films Grown on SiTiO3(100) Substrates", C. H. Chen, J. Kwo and M. Hong, Appl. Phys. Lett. 52, 841 (1988). 46."High Tc Superconducting Y-Ba-Cu-O Oxide Films by Sputtering and Molecular Beam Epitaxy: Morphology, Structural Characterization and Superconducting Properties", S. H. Liou, M. Hong, B. A. Davidson, R. C. Farrow, J. Kwo, T. C. Hsieh, R. M. Fleming, H. S. Chen, L. C. Feldman, A. R. Kortan, and R. J. Felder, AIP Conf. Proc. 165, 12 (1988). 47."Thin Films Research of High Tc Superconductors", M. Hong, J. Kwo, C. H. Chen, R. M. Fleming, S. H. Liou, M. E. Gross, B. A. Davidson, H. S. Chen, S. Nakahara and T. Boone, Conf. Proc. of American Institute of Physics, 165, 189 (1988). 48."Y-Ba-Cu-O Films by rf Magnetron Sputtering Using Single Composite Targets: Superconducting and Structural Properties", S. H. Liou, M. Hong, J. Kwo, B. A. Davidson, H. S. Chen, S. Nakahara, T. Boone and R. J. Felder, Appl. Phys. Lett. 52, 1735 (1988). 49."Observation of a Halide (F/Cl) Stabilized, New Perovskite Phase in Superconducting YBa2Cu3O7-x Films", J. Kwo, M. Hong, R. M. Fleming, A. F. Hebard, M. L. Mandich, A. M. DeSantolo, B. A. Davidson, P. Marsh and N. D. Hobbins, Appl. Phys. Lett. 52, 1625 (1988). 50."High Critical Current Superconducting Bi-Sr-Ca-Cu-O Films by Sputtering", M. Hong, J. Kwo and J. J. Yeh, J. Crystal Growth, 91, 382 (1988). 51."High Temperature Superconducting Oxide Films", M. Hong, J. Kwo and C. H. Chen, Proc. of 38th Electronic Components Conf. p. 146, (1988), IEEE Trans Components, Hybrids and Manufacturing Technology, 11, 407, (1988). 52."Superconducting Properties of a 27Å Phase of Ba-Y-Cu-O", M. L. Mandich, A. M. DeSantolo, R. M. Fleming, P. Marsh, S. Nakahara, S. Sunshine, J. Kwo, M. Hong, T. Boone, T. Y.Kometani and L. Martinez-Miranda, Phys. Rev. B38, 5031 (1988). 53."Preparation of High Tc and Jc Films of YaB2Cu3O7-δ by Laser Evaporation and Observation of Superconductivity in a 27Å phase", M. L. Mandich, A. M. DeSantolo, R. M. Fleming, P. Marsh, L. Martinez-Miranda, S. Nakahara, S. Sunshine, J. R. Kwo, M. Hong, T. Boone, B. A. Davidson and T. Kometani, SPIE. 948, 66 (1988). 54."Tunneling Characteristics of Internal Josephson Junctions in YaB2Cu3O7-δ W. S. Brocklesby, D. P. Monroe, M. Hong, S. H. Liou, J. Kwo, G. J. Fisanick, P. M. Mankiewich, and R. E. Howard, Phys. Rev. B, 38, 11805, (1988). 55."Crystal Structure of the 80K Superconductor YBa2Cu4O8", P. Marsh, R. M. Fleming, M. L. Mandich, A. M. DeSantolo, J. Kwo, M. Hong, L. Maratinez-Miranda, Nature, 334, 141, (1988). 56."Physical Processing Effects on Polycrystalline YBa2Cu3Ox", W. K. Ford, J. Anderson, G. V. Rubenacker, J. E. Drumheller, C. T. Chen, M. Hong, J. Kwo and S. H. Liou, Journal of Mat. Research, 4, 16, (1989). 57."Superconducting Tl-Ba-Ca-Cu-O Films by Sputtering", M. Hong, S. H. Liou, D. D. Bacon, G. S. Grader, J. Kwo, A. R. Kortan and B. A. Davidson, Appl. Phys. Lett. 53, 2104, (1988). 58."Magnetic Superlattices", J. Kwo, M. Hong, D. B. McWhan, Y. Yafet, R. M. Fleming, F. J. DiSalvo, J. V. Waszczak, C. F. Majkrzak, D. Gibbs, A. I. Goldman, P. Boni, J. Bohr, H. Grimm, C. L. Chien, and J. W. Cable, Proc. of ICM 88, Journal de Physique, Colloque, C8, 1651, (1988). 59."Transport Properties of High Tc Superconducting Oxides", A. T. Fiory, G. P. Espinosa, R. M. Fleming, G. S. Grader, M. Gurvitch, A. F. Hebard, R. E. Howard, J. Kwo, A. F. J. Levi, P. M. Mankiewich, S. Martin, C. E. Rice, L. F. Schneemeyer and A. E. White, JSAP-MRS Int'l. Conf. on Electrical Materials, Ed. T. Sugano, R. P. H. Chang, H. Kamimura, I. Hanyashi, and T. Kamiya, (Materials Research Society, Pittsburgh, PA), p. 3-8, (1989). 60."In-situ Epitaxial Growth of YBa2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Appl. Phys. Lett. 53, 2683, (1988). 61."Superconducting Bi-Sr-Ca-Cu-O Films by Sputtering using a Single Target", M. Hong, J. J. Yeh, J. Kwo, R. J. Felder, A. Miller, K. Nassau, and D. D. Bacon, AIP Conf. Proc. of Am. Vac. Soc. Meeting, 182, 122, (1989). 62."Single-phase High Tc Superconducting Tl2Ba2Ca2Cu3O10 Films", M. Hong, S. H. Liou, J. Kwo, C. H. Chen, A. R. Kortan, and D. D. Bacon, AIP Conf Proc. of Am. Vac. Soc. Meeting, 182, 1017, (1989). 63."Properties of In-situ Superconducting YBa2Cu3O7-x Films By Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, R. C. Farrow, A. R. Kortan, and K. N. Short, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 101, (1989). 64."Tl-Based Superconducting Films By Sputtering Using a Single Target", S. H. Liou, M. Hong, A. R. Kortan, J. Kwo, D. D. Bacon, C. H. Chen, R. C. Farrow, and G. S. Grader, Science and Technology of Thin Film Superconductors, Plenum Press, London and New York, p. 229, (1989). 65."Superlattice Modulation and Epitaxy of Tl2Ba2Ca2Cu3O10 Thin Films Grown on MgO and SrTiO3 Substrates", C. H. Chen, M. Hong, D. J. Werder, J. Kwo, S. H. Liou, and D. D. Bacon, Appl. Phys. Lett., 54, 1579, (1989). 66."Electrical Response of Superconducting YBa2Cu3O7-x To Light", W. S. Brocklesby, Don Monroe, A. F. J. Levi, M. Hong, J. Kwo, C. E. Rice, P. M. Mankiewich, R. E. Howard, and S. H. Liou, Appl. Phys. Lett. 54, 1175, (1989). 67."Diffraction Studies of Rare Earth Metals and Superlattices", J. Bohr, Doon Gibbs, J. D. Axe, D. E. Moncton, K. L. D'Amico, C. F. Majkrzak, J. Kwo, M. Hong, C. L. Chien, and J. Jenson, Conf. Proc. of Workshop on "X-ray and Neutron Scattering from Magnetic Materials", Physica B, 93, (1989). 68."In-situ Growth of YBa2Cu3O7-x Films by Molecular Beam Epitaxy with an Activated Oxygen Source", J. Kwo, M. Hong, D. J. Trevor, R. M. Fleming, A. E. White, J. P. Mannaerts, A. R. Kortan, and K. T. Short, Physica C, 162-164, 623, (1989). 69."Properties of Superconducting Tl2Ba2Ca2Cu3O10 Films by Sputtering", M. Hong, J. Kwo, C. H. Chen, A. R. Kortan, D. D. Bacon, S. H. Liou, Thin Solid Films. 181, 173-180, (1989). 70."Materials and Tunneling Characteristics of HTSC YBa2Cu3O7-x Thin Films by Molecular Beam Epitaxy", J. Kwo, M. Hong, T. A. Fulton, P. L. Gammel, and J. P. Mannaerts, in SPIE. 1187, "Processing of Films for High Tc Superconducting Electronics", p. 57. (1989). 71."Observations of Quasiparticle Tunneling and Josephson Behavior in YBa2Cu3O7-x native barrier/Pb Thin Film Junctions," J. Kwo, T. A. Fulton, M. Hong and P. L. Gammel, Appl. Phys. Lett. 56, 788, (1990). 72."The Search for Circular Dichroism in High Tc Superconductors," K. B. Lyons, J. Kwo, J. F. Dillon, Jr., G. P. Espinosa, M. McGlashan-Powell, A. P. Ramirez and L. F. Schneemeyer, Phys. Rev. Lett. 64, 2949, (1990). 73."Magnetic Properties of Gd/Dy Superlattices: Experiment and Theory," R. E. Camley, J. Kwo, M. Hong and C. L. Chien, Phys. Rev. Lett. 64, 2703, (1990). 74."Materials and Tunneling Characteristics of YBa2Cu3O7-x Films Grown by Molecular Beam Epitaxy," J. Kwo, Conf. Proc. of 2nd ISTEC Workshop on Superconductivity, Kagoshima, Japan, 5/28-30, 1990. 75."Growth and Properties of High Tc Films in YBa2Cu3O7-x Perovskite by Molecular Beam Epitaxy," J. Kwo, Journal of Crystal Growth, 111, 965, (1991). 76."Magnetic Rare Earth Superlattices," C. F. Majkrzak, J. Kwo, M. Hong, Y. Yafet, D. Gibbs, C. L. Chien and J. Bohr, Journal of Advances in Physics, 40, 99-189, (1991). 77."MBE Growth and Properties of Fe3(Al, Si) on GaAs(100),"M. Hong, H. S. Chen, J. Kwo, A. R. Kortan, J. P. Mannaerts, B. Weir and L. C. Feldman, J. Crystal Growth, 111, 984, (1991). 78."A Simple Way to Reduce Series Resistance in P-Doped Semiconductor Distributed Bragg Reflector," M. Hong, J. P. Mannaerts, J. M. Hong, R. J. Fisher, K. Tai, J. Kwo, J. M. Vandenberg, Y. H. Wang and J. Gamelin, J. of Crystal Growth, 111, 1052, (1991). 79."In-situ Growth and Properties of Single Crystalline-like La2-xSrxCuO4 Epitaxial Films by Off-axis Sputtering", H. L. Kao, J. Kwo, R. M. Fleming, M. Hong, and J. P. Mannaerts, Appl. Phys. Lett. 59, 2748, (1991). 80."Transport Properties of the La2-xSrxCuO4 compound", H. Takagi, B. Batlogg, R. J. Cava, J. Kwo, H. L. Kao, and M. Marezio, Conf. Proc. of the Materials and Mechanism of Superconductivity, July 22 -26, 1991, Japan. 81."Study of Intermetallic Compound Fe3AlxSi1-x Epitaxially Grown on GaAs by Transmission Electron Microscopy," Y. F. Hsieh, M. Hong, J. Kwo, A. R. Kortan, H-S. Chen and J. P. Mannaerts, Conf. Proc. of the 18th International Symposium on Gallium Arsenide and Related Compounds, (1991). 82."High Temperature Superconducting Single Crystalline-like La2-xSrxCuO4 Epitaxial Films," J. Kwo and H. L. Kao, Conf. Proc. of the 4th Annual U.S./Japan Workshop on Superconductivity, Gaithersburg, MD, 11/25-26, (1991). 83."La2-xSrxCuO4 Films of Tilted CuO2 Planes," J. Kwo, R. M. Fleming, H. L. Kao, D. J. Werder and C. H. Chen, Appl. Phys. Lett. 60, 1905, (1992). 84."Scanning Hall Probe Microscopy of a Vortex and Field Fluctuations in La2-xSrxCuO4 Films," A. M. Chang, H. D. Hallen, H. F. Hess, H. L. Kao, J. Kwo, A. Sudbo, and T. Y. Chang, Euro. Phys. Lett. 20, 645, (1992). 85."Scanning Hall Probe Microscopy," A. M. Chang, H. D. Hallen, L. Harriott, H. F. Hess, H. L. Kao, J. Kwo, R. E. Miller, R. Wolfe, J. van der Ziel and T. Y. Chang, Appl. Phys. Lett. 61, 1974, (1992). 86."Systematic Evolution of Temperature Dependent Resistivity in La2-xSrxCuO4", H. Takagi, B. Batlogg, H. L. Kao, J. Kwo, R. J. Cava, J. J. Krajewski and W. F. Peck, Jr., Phys. Rev. Lett. 69, 2975, (1992). 87."Out of Plane Orbital Characters of Conducting Holes in La2-xSrxCuO4", C. T. Chen, L. H. Tjeng, J. Kwo, H. L. Kao, P. Rudoff, F. Sette, and R. M. Fleming, Phys. Rev. Lett. 68, 2543, (1992). 88.Reply to the Comments by K. H. Johnson, D. P. Clougherty, and M. E. McHenry, C. T. Chen, L. H. Tjeng, J. Kwo, H. L. Kao, F. Sette, and R. M. Fleming, Phys. Rev. Lett. 69, (1992). 89."Microstructures of Thin Film La2-xSrxCuO4 on SrTiO3 and LaAlO3", D. J. Werder, C. H. Chen, H. L. Kao, and J. Kwo, Physica C.204, 155, (1992). 90."Charge Dynamics in Metallic CuO2 Layers", B. Batlogg, H. Takagi, H. L. Kao, and J. Kwo, in Electronic Properties of High Tc Superconductors, The Normal and Superconducting State, Ed. H. Kuzmany et al, Springer Series in Solid-State Sciences, 113, Springer-Verlog, Berlin, Heidelberg (1993). 91."Magnetic Properties of Epitaxial Single Crystal Ultra-thin Fe3Si Films on GaAs (001)", S. H. Liou, S. S. Malhotra, J. X. Shen, M. Hong, J. Kwo, H. S. Chen, and J. P. Mannaerts, J. of Appl. Phys. 73, 6766, (1993). 92."Broken Time Reversal Symmetry in Cuprate Superconductors: The Non-Reciprocal Polar Kerr Effect," K. B. Lyons, J. Dillon, S. Duclos, C. B. Eom, H. L. Kao, J. Kwo, J. M. Phillips and M. P. Siegel, Phys. Rev. B, 47, 8195, (1993). 93."Systematic Evolution of Transport Anisotropy of La2-xSrxCuO4 as a Function of Doping", H. L. Kao, J. Kwo, H. Takagi, and B. Batlogg, Phys. Rev. B. Rapid Comm. 48, 9925, (1993). 94."Scaling of the Temperature Dependent Hall Effect in La2-xSrxCuO4", H. Y. Hwang, B. Batlogg, H. Takagi, H. L. Kao, J. Kwo, R. J. Cava, J. J. Krajewski and W. F. Peck, Jr., Phys. Rev. Lett. 69, 2975, (1994). 95."Temperature Dependence of the Resonant Magnetic X-ray Scattering in Holmium," G. Helgesen, T. Thurston, J. P. Hill, D. Gibbs, J. Kwo and M. Hong, Phys. Rev. B50, 2990, (1994). 96."GaInO3: A New Transparent Conducting Oxide", R. J. Cava, J. M. Phillips, J. Kwo, G. A.Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, J. H. Marshall, and D. H. Rapkine, R. J. Cava, J. M. Phillips, J. Kwo, G. A. Thomas, R. B. van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, Jr., J. H. Marshall and D. H. Rapkine, Appl. Phys. Lett. 64, 2071, (1994). 97."Transparent Conducting Thin Films of GaInO3," J. M. Phillips, J. Kwo, G. A. Thomas, S. A. Carter, R. J. Cava, S. Y. Hou, J. J. Krajewski, J. H. Marshall, W. F. Peck, Jr., D. H. Rapkine and R. B. van Dover, Appl. Phys. Lett. 65, 115, (1994). 98."Transprent Conducting Films of GaInO3 by Sputtering," J. Kwo, S. A. Carter, R. J. Cava, S. Y. Hou, J. M. Phillips, D. H. Rapkine, G. A. Thomas, and R. B. Van Dover, Mat. Res. Soc. Sympos. Proc. 345, p. 241, (1994). 99."Transparent Conducting Films Grown by Pulsed Laser Deposition," J. M. Phillips, R. J. Cava, S. Y. Hou, J. J. Krajewski, J. Kwo, J. H. Marshall, W. F. Peck, Jr., D. H. Rapkine, G. A. Thomas and R. B. van Dover, Mat. Res. Soc. Sympos. Proc., 345, p. 255, (1994). 100."Growth and Characterization of Ba0.5Sr0.5TiO3 Thin Films on Si (100) by 90°Off-Axis," S. Y. Hou, J. Kwo, R. K. Watts, D. J. Werder, J. Shmulovich and H. M. O'Bryan, Mat. Res. Soc. Symp. Proc. 343, p. 457, (1994). 101."Charge Dynamics in La2-xSrxCuO4 from Underdoping to Overdoping," B. Batlogg, H. Y. Hwang, H. Takagi, H. L. Kao, J. Kwo, and R. J. Cava, J. of Low Temp. Phys. 95, 23 (1994). 102."Normal State Phase Diagram of La2-xSrxCuO4 from Charge and Spin Dynamics," B. Batlogg, H. Y. Hwang, H. Takagi, R. J. Cava, H. L. Kao, and J. Kwo, Physica C 235-240, 130-133 (1994). 103."Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-GaAs Using In-Situ Integrated Process,"M. Hong, D. Vakhshoori, J. P. Mannaerts and J. Kwo, Mat. Res. Soc. Proc. 337, p. 287, (1994). 104."In-Situ Fabricated Ga2O3-GaAs Structures with Low Interface Recombination Velocity," M. Passlack, M. Hong, E. F. Schubert, J. Kwo, J. P. Mannaerts, S. N. G. Chu, N. Moriya and F. A. Thiel, Appl. Phys. Lett. 66, 625, (1995). 105."Zinc Indium-Oxide: A High Conductivity Transparent Conducting Oxide," J. M. Phillips, R. J. Cava, G. A. Thomas, S. A.Carter, J. Kwo, T. Siegrist, J. J. Krajeski, J. H. Marhsall, W. F. Peck, Jr. and D. H. Rapkine, Appl. Phys. Lett. 67, 2246, (1995). 106."Heteroepitaxial Growth of Ba0.5Sr0.5TiO3/SrRuO3 on YSZ/Si by Off-Axis Sputtering", S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng, R. J. Cava, W. F. Peck, and D. K. Fork, Mat. Res. Soc. Symp. Proc., 361, p. 99, (1995). 107."Structure and Properties of Epitaxial Ba0.5Sr0.5TiO3/SrRuO3/YSZ Heterostructure on Si Grown by 90 degree Off-Axis Sputtering," S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng and D. K. Fork, Appl. Phys. Lett. 67, 1387, (1995). 108."Heteroepitaxial Ba1-xKxBiO3/ La2-xSrxCuO4 Tunnel Junctions," E. S. Hellman, J. Kwo, A. Kussmaul and E. H. Hartford, Jr., Physica C. 251, 133, (1995). 109."Structural and Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Films Grown on Si by Off-Axis Sputtering," S. Y. Hou, J. Kwo, R. K. Watts, J. Y. Cheng and D. K. Fork, Integrated Ferroelectrics, 10. p. 343, (1996). 110."Recombination Velocity at Oxide-GaAs interface Fabricated by In-situ Molecular Beam Epitaxay”, M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, and L. W. Tu, Appl. Phys. Lett, 68, 3605, (1996). 111."Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy," M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou and V. J. Fratello, J. of Vacuum Science Tech. B 14(3), 2297, (1996). 112."GaAs Surface Passivation Using In-situ Oxide Deposition", M. Passlack, M. Hong, R. L. Opila, J. P. Mannaerts, and J. Kwo, Journal of Applied Surface Science, 104-105, p. 441, (1996). 113."Novel Heterostructures Produced Using In-situ Molecular Beam Epitaxy", M. Hong, M. Passlack, D. Y. Noh, J. Kwo, and J. P. Mannaerts, in "State-of-the-art program on compound semiconductors XXIV" Ed. F. Ren et al, ECS The Electrochemical Society, p. 36, (1996). 114."Enhancement-Mode p-channel GaAs MOSFETs on Semi-insulating Substrates", F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, IEEE International Electron Devices Meeting, San Francisco, Ca, December 8-11, 1996. IEEE IEDM Conf. Proc. 383, (1996). 115."Low Dit Thermodynamically Stable Ga2O3-GaAs Interfaces: Fabrication, Characterization, and Modeling", M. Passlack, M. Hong, J. P. Mannaerts, J. Kwo, R. L. Opila, S. N. G. Chu, N. Moriya, and F. Ren, IEEE Transaction of Electron Devices, 44 No. 2, 214-225, (1997). 116."Novel Ga2O3(Gd2O3) Passivation Techniques To Produce Low Dit Oxide-GaAs Interfaces", M. Hong, J. P. Mannaerts, J. E. Bowers, J. Kwo, M. Passlack, W-Y. Hwang, and L. W. Tu, J. Crystal Growth, 175/176, pp.422-427, (1997). 117."Demonstration of Enhancement-Mode p- and n-Channel GaAs MOSFETs With Ga2O3(Gd2O3) As Gate Oxide”, F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, Solid State Electronics, 41 (11), p.1751, (1997). 118."Growth of Ga2O3(Gd2O3) Using Molecular Beam Epitaxy Techniques - Key to First Demonstration of GaAs MOSFETs", M. Hong, F. Ren, W. S. Hobson, J. M. Kuo, J. Kwo, J. P. Mannaerts, J. R. Lothian, M. A. Marcus, C. T. Liu, A. M. Sergent, T. S. Lay, and Y. K. Chen, 24th IEEE International Symposium on Compound Semiconductors, IOP series 97th8272, Bristol and Philadelphia, p. 319-324, (1997). 119."Characterization of The Interfacial Electronic Properties of Oxide Films on GaAs Fabrication by In-situ Molecular Beam Epitaxy”, J. S. Hwang, W. Y. Chou, G. S. Chang, S. L. Tyan, M. Hong, J. P. Mannaerts, and J. Kwo, pp. 249-253, IOP series 97th8272, Bristol and Philadelphia, (1997). (Based on a contributed paper given at 1997 24th IEEE International Symposium on Compound Semiconductors) 120."III-V Compound Semiconductor MOSFETs Using Ga2O3(Gd2O3) as Gate Dielectric”, F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, GaAs IC Symposium Technical Digest, 97CH36098, p. 18-21, (1997). 121."Oxide-GaAs Interfacial Electronic Properties Characterized by Modulation Spectroscopy of Photoreflectance", J. S. Hwang, S. L. Tyan, Y. C. Wang, W. Y. Chou, M. Hong, J. Kwo, and J. P. Mannaerts, J. Appl. Phys., 83 (5), p.2857-9, (1998). 122."Structural Properties of Ga2O3(Gd2O3) -GaAs Interfaces”, M. Hong, J. P. Mannaerts, M. A. Marcus, J. Kwo, A. M. Sergent, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, J. Vac. Sci. Technol. B16(3), p.1395, (1998). 123."Depletion Mode GaAs MOSFETs With of Ga2O3(Gd2O3) as Gate Oxide”, M. Hong, F. Ren, J. M. Kuo, W. S. Hobson, J. Kwo, J. P. Mannaerts, J. R. Lothian, and Y. K. Chen, J. Vac. Sci. Technol. B16(3), p.1398, (1998). 124."A Ga2O3(Gd2O3) /InGaAs Enhancement-Mode n-Channel MOSFET”, F. Ren, J. M. Kuo, M. Hong, W. S. Hobson, J. R. Lothian, J. Lin, W. S. Tseng, J. P. Mannaerts, J. Kwo, S. N. G. Chu, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, V. 19, No. 8, p. 309, (1998). 125."Ga2O3(Gd2O3) as a Gate Dielectric for GaAs MOSFETs”, M. Hong, J. Kwo, C. T. Liu, M. A. Marcus, T. S. Lay, F. Ren, J. P. Mannaerts, K. K. Ng , Y. K. Chen, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, "Light Emitting Devices for Optoelectronic Applications and the 28th State-of-the-art program on compound semiconductors" Ed. H. Q. Hou et al, ECS The Electrochemical Society Proceedings, 98-2, p. 434-442, (1998). 126."Ga2O3(Gd2O3) as a Dielectric Insulator for GaAs Device Applications”, T. S. Lay, M. Hong, J. P. mannaerts, C. T. Liu, J. Kwo, F. Ren, M. A. Marcus, K. K. Ng , Y. K. Chen, L. J. Chou, K. C. Hsieh, and K. Y. Cheng, Conference Proceedings, SPIE-The International Society for Optical Engineering, Optoelectronic Materials and Devices, SPIE’s Asia Pacific Symposium on Optoelectronics ’98, 9-11 July 1998, Taipei, Taiwan. 127."Depletion-Mode GaAs MOSFETs with Negligible Drain Current Drift and Hysteresis”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, IEEE International Electron Devices Meeting, San Francisco, CA, December 6-9, 1998. IEDM Technical Digest pp. 67-70, (1998). 128."Semiconductor-Insulator Interfaces”, M. Hong, C. T. Liu, H. Reese, and J. Kwo in "Encyclopedia of Electrical and Electronics Engineering”, 19, p. 87-100, Ed. by J. G. Webster, Published by John Wiley & Sons, New York, (1999). 129."Epitaxial Cubic Gd2O3 as a Dielectric for GaAs Passivation”, M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science, 283, p.1897-1900, (1999). 130."Passivation of GaAs Using Gallium-Gadolinium Oxides”, J. Kwo, D. W. Murphy, M. Hong, J. P. Mannaerts, R. L. Opila, R. L. Masaitis, and A. M. Sergent, J. Vac. Sci. Technol. B 17 (3), p.1294-1296, (1999). 131."Single Crystal Cubic Gd2O3 Films on GaAs – A New Dielectric For GaAs Passivation”, M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, M. C. Wu, and A. M. Sergent, in "III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectonics and Optoelectronics”, Ed. S. A. Ringel et al, Mat. Res. Soc. Symp. Proc. 535, p. 151, (1999). 132."Compound Semiconductor MOSFET’s Using (Ga,Gd)2O3 as Gate Dielectric”, M. Hong, F. Ren, Y. C. Wang, J. M. Kuo, J. Kwo, J. P. Mannaerts, Y. K. Chen, and A. Y. Cho, in Int’l. Electron Devices and Materials Symp., Tainan, Taiwan, R.O.C., IEDMS’98, p. 78-81, (1998). 133."Ga2O3(Gd2O3)/GaAs Power MOSFET’s”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, H. S. Tsai, J. Kwo, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, Electronics Letters, 35, No. 8, 667, (1999). 134."Demonstration of Sub-micron Depletion-Mode GaAs MOSFET’s with negligible drain current drift and hysteresis”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, Y. K. Chen, and A. Y. Cho, IEEE Electron Device Letters, 20, p. 457-459, (1999). 135."The (Ga2O3)1-x(Gd2O3)x Oxides With x = 0 – 1.0 for GaAs Passivation”, J. Kwo, M. Hong, A. R. Kortan, D. W. Murphy, J. P. Mannaerts, A. M. Sergent, Y. C. Wang, and K. C. Hsieh, in"Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 57-68, (1999). 136."Structure of Single Crystal Gd2O3 Films on GaAs (100)”, A. R. Kortan, M. Hong, J. R. Kwo, J. P. Mannaerts, and N. Kopylov, in "Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 21-30, (1999). 137."Advances in GaAs MOSFETs Using Ga2O3(Gd2O3) as Gate Oxide”, Y. C. Wang, M. Hong, J. M. Kuo, J. P. Mannaerts, J. Kwo, H. S. Tsai, J. J. Krajewski, J. S. Weiner, Y. K. Chen, and A. Y. Cho, in >"Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 219-226, (1999). 138."Energy Band Offsets at a Ga2O3(Gd2O3)-GaAs Interface”, T. S. Lay, M. Hong, J. Kwo, J. P. Mannaerts, W. H. Hung, and D. J. Huang, in "Compound semiconductor surface passivation and novel device processing”, Ed. by H. Hasegawa, M. Hong, Z. H. Lu, and S. Pearton, Materials Research Society Proc. 573, pp. 131-136, (1999). 139."Passivation of GaAs Using (Ga2O3)1-x(Gd2O3)x, (x=0 – 1.0) Films”, J. Kwo, D. W. Murphy, M. Hong, R. L. Opila, J. P. Mannaerts, R. L. Masaitis, and A. M. Sergent, Appl. Phys. Lett., 75,1116, (1999). 140."Structure of Epitaxial Gd2O3 Films Grown on GaAs (100)”, A. R. Kortan, M. Hong, J. Kwo, J. P. Mannaerts, and N. Kopylov, Phys. Rev. B60, 10913, (1999). 141."The Structure of Epitaxial Gd2O3 Films and Their Registry on GaAs (100) Substrates”, B. Bolliger, M. Erbudak, M. Hong, J. Kwo, A. R. Kortan, and J. P.

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