个人简介

教育与研究经历： 2010/9 - 2015/6，湖南大学物理学专业，获理学博士学位（硕博连读） 2006/9 – 2010/7，广西师范学院物理学专业，获理学学士学位 教学情况: 主讲本科生基础课《理论力学》、《数学物理方法》

研究领域

计算凝聚态物理学

主持科研项目： 1、国家自然科学基金青年科学基金项目，61704036，增强型GaSb/Si/InAs异质结量子器件输运及其内电场下拓扑绝缘态的研究，2018/01-2020/12，25万，在研，主持； 2、国家自然科学基金应急管理项目，61640405，二维材料/砷化铟异质纳米复合结构的奇异界面态及电荷输运机理的研究，2017/01-2017/12，7万，结题，主持； 3、广西自然科学基金青年科学基金项目，2017GXNSFBA198006，应变增强GaSb/InAs核壳纳米线载流子迁移率的理论研究，2017/09-2020/08，10万，在研，主持。

近期论文

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(1) Feng Ning*, Shi-Zhang Chenb, Yong Zhang, Gao-Hua Liao, Ping-Ying Tang, Zheng-Liang Li,Li-Ming Tang,* Interfacial charge transfers and interactions drive rectifying and negative differential resistance behaviors in InAs/graphene van der Waals heterostructures. Applied Surface Science 496 (2019) 143629 (2) Feng Ning, Dan Wang,Ye-Xin Feng, Li-Ming Tang*, Yong Zhangad and Ke-Qiu Chen*， Strong interfacial interaction and enhanced optical absorption in graphene/InAs and MoS 2/InAs heterostructures. Journal of Materials Chemistry C, 2017, 5(36): 9429-9438. (3) Feng Ning, Li-Ming Tang, Yong Zhang, and Ke-Qiu Chen. Remote p-type doping in GaSb/InAs core-shell nanowires , Scientific Reports, 2015, 5: 10813 (4) Feng Ning, Dan Wang, Li-Ming Tang, Yong Zhang, and Ke-Qiu Chen. The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires , J. Appl. Phys., 2014, 116: 094308 (5) Feng Ning, Li-Ming Tang, Yong Zhang, and Ke-Qiu Chen. First-principles study of quantum confinement and surface effects on the electronic properties of InAs nanowires, J. Appl. Phys. 2013, 114: 224304 (6) Yong Zhang，Zhong-Xiang Xie*，Xia Yu，Hai-Bin Wang，Yuan-Xiang, Deng，Feng Ning*, First-principles study of size-, surface- and mechanical, strain-dependent electronic properties of wurtzite and zinc-blende InSb nanowires，Physics Letters A, 2016, 380: 2678-2684 (7) Shi-Zhang Chen, Fang Xie, Feng Ning, Yue-Yang Liu, Wu-Xing Zhou, Ji-Feng Yu, Ke-Qiu Chen, Breaking surface states causes transformation from metallic to semi-conducting behavior in carbon foam nanowires , Carbon, 2017, 111: 867-877 (8) Yu-Cheng Ling, Feng Ning, Yan-hong Zhou, Ke-Qiu Chen. Rectifying behavior and negative differential resistance in triangular graphene p–n junctions induced by vertex B–N mixture doping , Organic Electronics, 2015, 19: 92–97 (9) Yong Zhang, Li-Ming Tang, Feng Ning, and Ke-Qiu Chen. Reducing self-compensating Mn interstitial in (Ga,Mn)As via nanostructure engineering, J. Phys. D: Appl. Phys., 2013, 46: 175005 (10) Yong Zhang, Li-Ming Tang, Feng Ning, Dan Wang, and Ke-Qiu Chen. “Structural stability and electronic properties of InSb nanowires: A first-principles study. J. Appl. Phys., 2015, 117: 125707